JPS61198817A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS61198817A
JPS61198817A JP60271518A JP27151885A JPS61198817A JP S61198817 A JPS61198817 A JP S61198817A JP 60271518 A JP60271518 A JP 60271518A JP 27151885 A JP27151885 A JP 27151885A JP S61198817 A JPS61198817 A JP S61198817A
Authority
JP
Japan
Prior art keywords
circuit
field effect
base
effect transistor
turned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60271518A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0535927B2 (enrdf_load_stackoverflow
Inventor
Masahiro Iwamura
将弘 岩村
Ikuo Masuda
増田　郁郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP84115098A external-priority patent/EP0145004B1/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of JPS61198817A publication Critical patent/JPS61198817A/ja
Publication of JPH0535927B2 publication Critical patent/JPH0535927B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP60271518A 1984-12-10 1985-12-04 半導体集積回路装置 Granted JPS61198817A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP84115098A EP0145004B1 (en) 1983-12-12 1984-12-10 Bipolar transistor-field effect transistor composite circuit
EP84115098.0 1984-12-10

Publications (2)

Publication Number Publication Date
JPS61198817A true JPS61198817A (ja) 1986-09-03
JPH0535927B2 JPH0535927B2 (enrdf_load_stackoverflow) 1993-05-27

Family

ID=8192343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60271518A Granted JPS61198817A (ja) 1984-12-10 1985-12-04 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS61198817A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61225924A (ja) * 1985-03-30 1986-10-07 Toshiba Corp インバ−タ回路
JPH01238218A (ja) * 1988-03-18 1989-09-22 Hitachi Ltd バイポーラトランジスタと電界効果トランジスタとを有する半導体集積回路装置
JPH0262117A (ja) * 1988-08-06 1990-03-02 Samsung Electron Co Ltd 論理回路
JPH02502688A (ja) * 1987-12-01 1990-08-23 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Ｂｉｃｍｏｓ論理回路
US7180973B2 (en) 2003-09-11 2007-02-20 International Business Machines Corporation Programmable low-power high-frequency divider
US7342429B2 (en) 2003-09-11 2008-03-11 International Business Machines Corporation Programmable low-power high-frequency divider

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61225924A (ja) * 1985-03-30 1986-10-07 Toshiba Corp インバ−タ回路
JPH02502688A (ja) * 1987-12-01 1990-08-23 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Ｂｉｃｍｏｓ論理回路
JPH01238218A (ja) * 1988-03-18 1989-09-22 Hitachi Ltd バイポーラトランジスタと電界効果トランジスタとを有する半導体集積回路装置
JPH0262117A (ja) * 1988-08-06 1990-03-02 Samsung Electron Co Ltd 論理回路
US7180973B2 (en) 2003-09-11 2007-02-20 International Business Machines Corporation Programmable low-power high-frequency divider
US7342429B2 (en) 2003-09-11 2008-03-11 International Business Machines Corporation Programmable low-power high-frequency divider
US7378890B2 (en) 2003-09-11 2008-05-27 International Business Machines Corporation Programmable low-power high-frequency divider
US7545191B2 (en) 2003-09-11 2009-06-09 International Business Machines Corporation Method for dividing a high-frequency signal

Also Published As

Publication number Publication date
JPH0535927B2 (enrdf_load_stackoverflow) 1993-05-27

Similar Documents

Publication Publication Date Title
KR930000968B1 (ko) 반도체 집적회로
US5001366A (en) Gate circuit of combined field-effect and bipolar transistors
US4701642A (en) BICMOS binary logic circuits
JPS6027227A (ja) 半導体集積回路装置
JPH0616585B2 (ja) バツフア回路
JPH0353782B2 (enrdf_load_stackoverflow)
JP3864243B2 (ja) Ｓｏｉドミノ回路内の寄生バイポーラ動作を除去する方法及びｓｏｉドミノ回路
US6150869A (en) Method and apparatus for body control in silicon-on-insulator (SOI) domino circuits
JPS61198817A (ja) 半導体集積回路装置
US5239212A (en) Gate circuit of combined field-effect and bipolar transistors with an improved discharge arrangement
JPH10303737A (ja) ３入力排他的否定論理和回路
JP3547906B2 (ja) 半導体集積回路装置
JP3523611B2 (ja) 差動型論理回路
JPH1028045A (ja) Ｍｏｓトランジスタ回路
US6271686B2 (en) Method for elimination of parasitic bipolar action in silicon on insulator (SOI) dynamic logic circuits
JP2002536820A (ja) 相補型酸化膜半導体（ｃｍｏｓ）シリコン・オン・インシュレータ（ｓｏｉ）回路における寄生バイポーラの作用をなくすための方法および装置
US5723988A (en) CMOS with parasitic bipolar transistor
US5600268A (en) Gate circuit of combined field-effect and bipolar transistors
JP2917693B2 (ja) 半導体集積回路
JP3008426B2 (ja) ＢｉＣＭＯＳゲート回路
JPH04324714A (ja) インバータ回路
JPH05268058A (ja) ゲート回路及びそれを含む半導体装置
JPH0491467A (ja) 半導体集積回路
JPS6323349A (ja) Ｃｍｏｓ半導体集積回路
JPH04109665A (ja) ＢｉＣＭＯＳ論理回路

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term