JPS61198638A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61198638A
JPS61198638A JP3784486A JP3784486A JPS61198638A JP S61198638 A JPS61198638 A JP S61198638A JP 3784486 A JP3784486 A JP 3784486A JP 3784486 A JP3784486 A JP 3784486A JP S61198638 A JPS61198638 A JP S61198638A
Authority
JP
Japan
Prior art keywords
atoms
crystal
oxygen
wafer
oxygen concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3784486A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0346972B2 (cs
Inventor
Takanori Hayafuji
早藤　貴範
Seiji Kawato
川戸　清爾
Yoshio Aoki
芳夫 青木
Shoji Wakayama
若山　昌次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3784486A priority Critical patent/JPS61198638A/ja
Publication of JPS61198638A publication Critical patent/JPS61198638A/ja
Publication of JPH0346972B2 publication Critical patent/JPH0346972B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP3784486A 1986-02-22 1986-02-22 半導体装置 Granted JPS61198638A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3784486A JPS61198638A (ja) 1986-02-22 1986-02-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3784486A JPS61198638A (ja) 1986-02-22 1986-02-22 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4385378A Division JPS54136274A (en) 1978-04-14 1978-04-14 Semiconductor device

Related Child Applications (5)

Application Number Title Priority Date Filing Date
JP6553986A Division JPS6249629A (ja) 1986-03-24 1986-03-24 半導体装置
JP6554286A Division JPS6249631A (ja) 1986-03-24 1986-03-24 半導体装置の製造方法
JP6553886A Division JPS6249628A (ja) 1986-03-24 1986-03-24 半導体装置
JP6554086A Division JPS6254445A (ja) 1986-03-24 1986-03-24 半導体装置
JP6554186A Division JPS6249630A (ja) 1986-03-24 1986-03-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61198638A true JPS61198638A (ja) 1986-09-03
JPH0346972B2 JPH0346972B2 (cs) 1991-07-17

Family

ID=12508840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3784486A Granted JPS61198638A (ja) 1986-02-22 1986-02-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS61198638A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0745704A3 (de) * 1995-06-01 1996-12-18 Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft Verfahren zur Herstellung einer epitaktisch beschichteten Halbleiterscheibe

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS=1975 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0745704A3 (de) * 1995-06-01 1996-12-18 Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft Verfahren zur Herstellung einer epitaktisch beschichteten Halbleiterscheibe
US5897705A (en) * 1995-06-01 1999-04-27 Wacker Siltronic Gesellschaft Fur Halbeitermaterialien Mbh Process for the production of an epitaxially coated semiconductor wafer

Also Published As

Publication number Publication date
JPH0346972B2 (cs) 1991-07-17

Similar Documents

Publication Publication Date Title
JPH0469814B2 (cs)
EP2710629A1 (en) Process for producing semiconductor device and semiconductor device
JPH10223640A (ja) 半導体基板およびその製造方法
KR100647940B1 (ko) 무결함 영역을 가진 반도체
JPH07247197A (ja) 半導体装置とその製造方法
JP2998330B2 (ja) Ｓｉｍｏｘ基板及びその製造方法
JPH0437152A (ja) 半導体装置の製造方法
JPS6142855B2 (cs)
KR960016219B1 (ko) 반도체 장치
EP1202334A1 (en) Method of producing silicon epitaxial wafers
JPS61198638A (ja) 半導体装置
JP2014078667A (ja) シリコンエピタキシャルウェーハ及びそれを用いた固体撮像素子の製造方法
JPH0247836A (ja) 半導体装置の製造方法
JP4550870B2 (ja) 半導体装置の製造方法
JPS6249629A (ja) 半導体装置
JPS6249631A (ja) 半導体装置の製造方法
JP2743451B2 (ja) 半導体装置の製造方法
JPH11145146A (ja) 半導体基板及びその製造方法
EP0482829A1 (en) Method for forming a composite oxide over a heavily doped region
JPS63192223A (ja) 半導体装置の製造方法
JPS6249630A (ja) 半導体装置の製造方法
JPS60137072A (ja) 接合型電界効果トランジスタの製造方法
JPH02208940A (ja) 半導体装置の製造方法
JPS61124127A (ja) 半導体装置の製造方法
JPS60175416A (ja) 半導体装置の製造方法