JPS61188971A - シヨツトキゲ−ト電界効果トランジスタ、およびその製造方法 - Google Patents
シヨツトキゲ−ト電界効果トランジスタ、およびその製造方法Info
- Publication number
- JPS61188971A JPS61188971A JP2910085A JP2910085A JPS61188971A JP S61188971 A JPS61188971 A JP S61188971A JP 2910085 A JP2910085 A JP 2910085A JP 2910085 A JP2910085 A JP 2910085A JP S61188971 A JPS61188971 A JP S61188971A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- conductive layer
- electrode
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 42
- 230000005669 field effect Effects 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 238000005468 ion implantation Methods 0.000 claims abstract description 15
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 239000011810 insulating material Substances 0.000 claims abstract description 3
- 238000001020 plasma etching Methods 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- 239000009719 polyimide resin Substances 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical group O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 88
- 238000002513 implantation Methods 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2910085A JPS61188971A (ja) | 1985-02-15 | 1985-02-15 | シヨツトキゲ−ト電界効果トランジスタ、およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2910085A JPS61188971A (ja) | 1985-02-15 | 1985-02-15 | シヨツトキゲ−ト電界効果トランジスタ、およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61188971A true JPS61188971A (ja) | 1986-08-22 |
| JPH0330984B2 JPH0330984B2 (enrdf_load_stackoverflow) | 1991-05-01 |
Family
ID=12266923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2910085A Granted JPS61188971A (ja) | 1985-02-15 | 1985-02-15 | シヨツトキゲ−ト電界効果トランジスタ、およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61188971A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61219177A (ja) * | 1985-03-25 | 1986-09-29 | Sumitomo Electric Ind Ltd | シヨツトキ−ゲ−ト電界効果トランジスタ及びその製造方法 |
| JPH01256173A (ja) * | 1988-04-06 | 1989-10-12 | Sumitomo Electric Ind Ltd | ゲート電極形成方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5860574A (ja) * | 1981-10-06 | 1983-04-11 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタの製造方法 |
| JPS59111372A (ja) * | 1982-12-16 | 1984-06-27 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS6027173A (ja) * | 1983-07-25 | 1985-02-12 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタおよびその製造方法 |
-
1985
- 1985-02-15 JP JP2910085A patent/JPS61188971A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5860574A (ja) * | 1981-10-06 | 1983-04-11 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタの製造方法 |
| JPS59111372A (ja) * | 1982-12-16 | 1984-06-27 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS6027173A (ja) * | 1983-07-25 | 1985-02-12 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタおよびその製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61219177A (ja) * | 1985-03-25 | 1986-09-29 | Sumitomo Electric Ind Ltd | シヨツトキ−ゲ−ト電界効果トランジスタ及びその製造方法 |
| JPH01256173A (ja) * | 1988-04-06 | 1989-10-12 | Sumitomo Electric Ind Ltd | ゲート電極形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0330984B2 (enrdf_load_stackoverflow) | 1991-05-01 |
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