JPS6118867B2 - - Google Patents
Info
- Publication number
- JPS6118867B2 JPS6118867B2 JP52084269A JP8426977A JPS6118867B2 JP S6118867 B2 JPS6118867 B2 JP S6118867B2 JP 52084269 A JP52084269 A JP 52084269A JP 8426977 A JP8426977 A JP 8426977A JP S6118867 B2 JPS6118867 B2 JP S6118867B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- oxide layer
- field oxide
- semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8426977A JPS5419676A (en) | 1977-07-15 | 1977-07-15 | Walled emitter type semiconductor device and production of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8426977A JPS5419676A (en) | 1977-07-15 | 1977-07-15 | Walled emitter type semiconductor device and production of the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59030225A Division JPS59229867A (ja) | 1984-02-22 | 1984-02-22 | ウオ−ルドエミツタ型半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5419676A JPS5419676A (en) | 1979-02-14 |
| JPS6118867B2 true JPS6118867B2 (OSRAM) | 1986-05-14 |
Family
ID=13825725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8426977A Granted JPS5419676A (en) | 1977-07-15 | 1977-07-15 | Walled emitter type semiconductor device and production of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5419676A (OSRAM) |
-
1977
- 1977-07-15 JP JP8426977A patent/JPS5419676A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5419676A (en) | 1979-02-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4933737A (en) | Polysilon contacts to IC mesas | |
| JPH0548936B2 (OSRAM) | ||
| US4323913A (en) | Integrated semiconductor circuit arrangement | |
| KR0134887B1 (ko) | 쌍극성 트랜지스터 및 그 제조방법 | |
| EP0233202B1 (en) | Fabricating a semiconductor device with buried oxide | |
| JPH0729914A (ja) | バイポーラ電力トランジスタ及びその製造方法 | |
| JPS60202965A (ja) | 改良した酸化物画定型トランジスタの製造方法及びその結果得られる構成体 | |
| JPS6360550B2 (OSRAM) | ||
| JPS6118867B2 (OSRAM) | ||
| JPS6352465B2 (OSRAM) | ||
| JPH0136710B2 (OSRAM) | ||
| KR950000139B1 (ko) | 바이폴라(Bipolar) 트랜지스터 및 그 제조방법 | |
| JPS59229867A (ja) | ウオ−ルドエミツタ型半導体装置 | |
| JP2536616B2 (ja) | 半導体装置 | |
| JPS5984469A (ja) | 半導体装置の製造方法 | |
| JPH07273127A (ja) | 半導体装置 | |
| JPH02152240A (ja) | 半導体装置の製造方法 | |
| JPH05109745A (ja) | 半導体装置 | |
| JPH05166820A (ja) | 半導体装置およびその製造方法 | |
| JPS641933B2 (OSRAM) | ||
| JPS5910270A (ja) | 半導体集積回路装置 | |
| JPH0574791A (ja) | 半導体装置 | |
| JPS6155781B2 (OSRAM) | ||
| JPH11501167A (ja) | 絶縁のためのｌｏｃｏｓ及びフィールド酸化物溝領域を有するシリコン本体を具えるｂｉｃｍｏｓ半導体装置 | |
| JPH06105712B2 (ja) | 高耐圧バイポ−ラ型半導体集積装置およびその製造方法 |