JPS61183198A - ダイヤモンド膜の製法 - Google Patents

ダイヤモンド膜の製法

Info

Publication number
JPS61183198A
JPS61183198A JP59278645A JP27864584A JPS61183198A JP S61183198 A JPS61183198 A JP S61183198A JP 59278645 A JP59278645 A JP 59278645A JP 27864584 A JP27864584 A JP 27864584A JP S61183198 A JPS61183198 A JP S61183198A
Authority
JP
Japan
Prior art keywords
diamond
gas
film
hydrogen
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59278645A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0566359B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Aida
比呂史 会田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP59278645A priority Critical patent/JPS61183198A/ja
Publication of JPS61183198A publication Critical patent/JPS61183198A/ja
Publication of JPH0566359B2 publication Critical patent/JPH0566359B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59278645A 1984-12-29 1984-12-29 ダイヤモンド膜の製法 Granted JPS61183198A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59278645A JPS61183198A (ja) 1984-12-29 1984-12-29 ダイヤモンド膜の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59278645A JPS61183198A (ja) 1984-12-29 1984-12-29 ダイヤモンド膜の製法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60170020A Division JPS61158899A (ja) 1985-07-31 1985-07-31 ダイヤモンド膜の製法

Publications (2)

Publication Number Publication Date
JPS61183198A true JPS61183198A (ja) 1986-08-15
JPH0566359B2 JPH0566359B2 (enrdf_load_stackoverflow) 1993-09-21

Family

ID=17600162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59278645A Granted JPS61183198A (ja) 1984-12-29 1984-12-29 ダイヤモンド膜の製法

Country Status (1)

Country Link
JP (1) JPS61183198A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987003307A1 (en) * 1985-11-25 1987-06-04 Showa Denko Kabushiki Kaisha Process for synthesizing diamond
JPS62174378A (ja) * 1986-01-27 1987-07-31 Meijiyou Univ 硬質炭素薄膜の形成方法
JPS63166733A (ja) * 1986-12-27 1988-07-09 Kyocera Corp ダイヤモンド膜の製造方法
JPS63166798A (ja) * 1986-12-27 1988-07-09 Kyocera Corp ダイヤモンド膜の製造方法
JPS6433096A (en) * 1987-04-03 1989-02-02 Fujitsu Ltd Gaseous phase synthesis for diamond
JPH01192794A (ja) * 1988-01-26 1989-08-02 Nachi Fujikoshi Corp ダイヤモンドの気相合成法
US4869924A (en) * 1987-09-01 1989-09-26 Idemitsu Petrochemical Company Limited Method for synthesis of diamond and apparatus therefor
JPH01246115A (ja) * 1988-03-26 1989-10-02 Semiconductor Energy Lab Co Ltd 炭素または炭素を主成分とする被膜を形成する方法
JPH01308896A (ja) * 1988-02-01 1989-12-13 Sumitomo Electric Ind Ltd ダイヤモンドおよびその気相合成法
JPH0244096A (ja) * 1988-05-02 1990-02-14 Nachi Fujikoshi Corp ダイヤモンドの気相合成方法
JPH02233590A (ja) * 1989-03-07 1990-09-17 Sumitomo Electric Ind Ltd 単結晶ダイヤモンド層形成法
JPH07300394A (ja) * 1988-02-01 1995-11-14 Sumitomo Electric Ind Ltd ダイヤモンドおよびその気相合成法
JP2006161075A (ja) * 2004-12-03 2006-06-22 Shinko Seiki Co Ltd 硬質炭素膜およびその形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030187A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
US3030188A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
JPS58135117A (ja) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater ダイヤモンドの製造法
JPH0566360A (ja) * 1991-09-02 1993-03-19 Asahi Optical Co Ltd 特殊写真撮影レンズ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030187A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
US3030188A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
JPS58135117A (ja) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater ダイヤモンドの製造法
JPH0566360A (ja) * 1991-09-02 1993-03-19 Asahi Optical Co Ltd 特殊写真撮影レンズ

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987003307A1 (en) * 1985-11-25 1987-06-04 Showa Denko Kabushiki Kaisha Process for synthesizing diamond
JPS62174378A (ja) * 1986-01-27 1987-07-31 Meijiyou Univ 硬質炭素薄膜の形成方法
JPS63166733A (ja) * 1986-12-27 1988-07-09 Kyocera Corp ダイヤモンド膜の製造方法
JPS63166798A (ja) * 1986-12-27 1988-07-09 Kyocera Corp ダイヤモンド膜の製造方法
JPS6433096A (en) * 1987-04-03 1989-02-02 Fujitsu Ltd Gaseous phase synthesis for diamond
US4869924A (en) * 1987-09-01 1989-09-26 Idemitsu Petrochemical Company Limited Method for synthesis of diamond and apparatus therefor
JPH01192794A (ja) * 1988-01-26 1989-08-02 Nachi Fujikoshi Corp ダイヤモンドの気相合成法
JPH01308896A (ja) * 1988-02-01 1989-12-13 Sumitomo Electric Ind Ltd ダイヤモンドおよびその気相合成法
JPH07300394A (ja) * 1988-02-01 1995-11-14 Sumitomo Electric Ind Ltd ダイヤモンドおよびその気相合成法
JPH01246115A (ja) * 1988-03-26 1989-10-02 Semiconductor Energy Lab Co Ltd 炭素または炭素を主成分とする被膜を形成する方法
JPH0244096A (ja) * 1988-05-02 1990-02-14 Nachi Fujikoshi Corp ダイヤモンドの気相合成方法
JPH02233590A (ja) * 1989-03-07 1990-09-17 Sumitomo Electric Ind Ltd 単結晶ダイヤモンド層形成法
US5400738A (en) * 1989-03-07 1995-03-28 Sumitomo Electric Industries, Ltd. Method for producing single crystal diamond film
JP2006161075A (ja) * 2004-12-03 2006-06-22 Shinko Seiki Co Ltd 硬質炭素膜およびその形成方法

Also Published As

Publication number Publication date
JPH0566359B2 (enrdf_load_stackoverflow) 1993-09-21

Similar Documents

Publication Publication Date Title
JPS61183198A (ja) ダイヤモンド膜の製法
JPH0566360B2 (enrdf_load_stackoverflow)
EP1563121A2 (en) Method for forming carbon nanotubes
EP1563122A2 (en) Method for forming carbon nanotubes
JPH03240959A (ja) 窒化炭素薄膜の合成方法
US4869929A (en) Process for preparing sic protective films on metallic or metal impregnated substrates
He et al. Preparation and characterization of RF-PECVD deposited films containing β-C3NN4 microcrystallites
JP2620252B2 (ja) 窒素含有硬質炭素膜の製造方法
JPH0471034B2 (enrdf_load_stackoverflow)
JPH0361369A (ja) ダイヤモンド状炭素膜の製造方法
JP3246780B2 (ja) 硬質カーボン膜の形成方法および形成装置
JPS63265890A (ja) ダイヤモンド薄膜又はダイヤモンド状薄膜の製造方法
JPS6321291A (ja) ダイヤモンド膜の製造方法
JP2617539B2 (ja) 立方晶窒化ほう素膜の製造装置
JPS63215596A (ja) ダイヤモンド薄膜又はダイヤモンド状薄膜の製造方法
JPH0811719B2 (ja) ダイヤモンド膜の製造方法
JPS63156009A (ja) ダイヤモンド微粉末の合成法
JP2636856B2 (ja) ダイヤモンド薄膜の製造方法
JPS63107899A (ja) 薄膜形成方法
JPH0248494A (ja) 炭素作製方法
JPH0524991B2 (enrdf_load_stackoverflow)
JPH0135799B2 (enrdf_load_stackoverflow)
JPS62278192A (ja) 結晶性炭素の気相合成法
JPH05262595A (ja) ダイヤモンド膜の製造方法
JPS63166798A (ja) ダイヤモンド膜の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term