JPS61183198A - Production of diamond film - Google Patents

Production of diamond film

Info

Publication number
JPS61183198A
JPS61183198A JP59278645A JP27864584A JPS61183198A JP S61183198 A JPS61183198 A JP S61183198A JP 59278645 A JP59278645 A JP 59278645A JP 27864584 A JP27864584 A JP 27864584A JP S61183198 A JPS61183198 A JP S61183198A
Authority
JP
Japan
Prior art keywords
diamond
org
substrate
compound
diamond film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59278645A
Other versions
JPH0566359B2 (en
Inventor
Hiroshi Aida
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP59278645A priority Critical patent/JPH0566359B2/ja
Publication of JPS61183198A publication Critical patent/JPS61183198A/en
Publication of JPH0566359B2 publication Critical patent/JPH0566359B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond

Abstract

PURPOSE:To produce a diamond film having high hardness and superior char acteristics at the high rate of formation by introducing an org. compound contg. oxygen as a constituent atom into a reaction chamber together with gases for forming the diamond and by growing the diamond on a substrate in a vapor phase. CONSTITUTION:The substrate is placed in the reaction chamber, and the org. compound contg. oxygen as one or more constituent atoms such as (CH3)2O, CH3OH or CH3COOH is introduced into the chamber together with gases for forming diamond such as H2 and CH3. the molar ratio of the org. compound to H2 is preferable about 0.0001-0.5. The internal pressure of the chamber is then regulated to about 10<-5>-100 Torr, the substrate is kept at about 400-1,400 deg.C, and plasma CVD is carried out. The org. compound prevents H from intruding a film during the formation and accelerates the activation of CH4 or other hydrocarbon, so a high hardness diamond film having a low hydrogen content is formed on the surface of the substrate. The rate of deposi tion is increased and the cost of the production of the diamond film is reduced.
JP59278645A 1984-12-29 1984-12-29 Expired - Lifetime JPH0566359B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59278645A JPH0566359B2 (en) 1984-12-29 1984-12-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59278645A JPH0566359B2 (en) 1984-12-29 1984-12-29

Publications (2)

Publication Number Publication Date
JPS61183198A true JPS61183198A (en) 1986-08-15
JPH0566359B2 JPH0566359B2 (en) 1993-09-21

Family

ID=17600162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59278645A Expired - Lifetime JPH0566359B2 (en) 1984-12-29 1984-12-29

Country Status (1)

Country Link
JP (1) JPH0566359B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987003307A1 (en) * 1985-11-25 1987-06-04 Showa Denko Kabushiki Kaisha Process for synthesizing diamond
JPS62174378A (en) * 1986-01-27 1987-07-31 Meijiyou Univ Formation of thin hard carbon film
JPS63166733A (en) * 1986-12-27 1988-07-09 Kyocera Corp Production of diamond film
JPS63166798A (en) * 1986-12-27 1988-07-09 Kyocera Corp Production of diamond film
JPS6433096A (en) * 1987-04-03 1989-02-02 Fujitsu Ltd Gaseous phase synthesis for diamond
JPH01192794A (en) * 1988-01-26 1989-08-02 Nachi Fujikoshi Corp Vapor-phase production of diamond
US4869924A (en) * 1987-09-01 1989-09-26 Idemitsu Petrochemical Company Limited Method for synthesis of diamond and apparatus therefor
JPH01246115A (en) * 1988-03-26 1989-10-02 Semiconductor Energy Lab Co Ltd Method for forming coating film of carbon or material composed mainly of carbon
JPH01308896A (en) * 1988-02-01 1989-12-13 Sumitomo Electric Ind Ltd Diamond and vapor synthesis thereof
JPH0244096A (en) * 1988-05-02 1990-02-14 Nachi Fujikoshi Corp Method and apparatus for vapor phase synthesis of diamond
JPH02233590A (en) * 1989-03-07 1990-09-17 Sumitomo Electric Ind Ltd Formation of single crystal diamond layer
JPH07300394A (en) * 1988-02-01 1995-11-14 Sumitomo Electric Ind Ltd Diamond and its vapor-phase synthesis
JP2006161075A (en) * 2004-12-03 2006-06-22 Shinko Seiki Co Ltd Hard carbon film, and its depositing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030188A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
US3030187A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
JPS58135117A (en) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater Preparation of diamond
JPH0566360A (en) * 1991-09-02 1993-03-19 Asahi Optical Co Ltd Special picture photographic lens

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030188A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
US3030187A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
JPS58135117A (en) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater Preparation of diamond
JPH0566360A (en) * 1991-09-02 1993-03-19 Asahi Optical Co Ltd Special picture photographic lens

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987003307A1 (en) * 1985-11-25 1987-06-04 Showa Denko Kabushiki Kaisha Process for synthesizing diamond
JPS62174378A (en) * 1986-01-27 1987-07-31 Meijiyou Univ Formation of thin hard carbon film
JPS635468B2 (en) * 1986-01-27 1988-02-03 Kagaku Gijutsucho Chokan Kanbo
JPS63166798A (en) * 1986-12-27 1988-07-09 Kyocera Corp Production of diamond film
JPS63166733A (en) * 1986-12-27 1988-07-09 Kyocera Corp Production of diamond film
JPS6433096A (en) * 1987-04-03 1989-02-02 Fujitsu Ltd Gaseous phase synthesis for diamond
JPH0477710B2 (en) * 1987-04-03 1992-12-09 Fujitsu Ltd
US4869924A (en) * 1987-09-01 1989-09-26 Idemitsu Petrochemical Company Limited Method for synthesis of diamond and apparatus therefor
JPH0474315B2 (en) * 1988-01-26 1992-11-25
JPH01192794A (en) * 1988-01-26 1989-08-02 Nachi Fujikoshi Corp Vapor-phase production of diamond
JPH07300394A (en) * 1988-02-01 1995-11-14 Sumitomo Electric Ind Ltd Diamond and its vapor-phase synthesis
JPH01308896A (en) * 1988-02-01 1989-12-13 Sumitomo Electric Ind Ltd Diamond and vapor synthesis thereof
JPH01246115A (en) * 1988-03-26 1989-10-02 Semiconductor Energy Lab Co Ltd Method for forming coating film of carbon or material composed mainly of carbon
JPH0476348B2 (en) * 1988-05-02 1992-12-03 Fujikoshi Kk
JPH0244096A (en) * 1988-05-02 1990-02-14 Nachi Fujikoshi Corp Method and apparatus for vapor phase synthesis of diamond
JPH02233590A (en) * 1989-03-07 1990-09-17 Sumitomo Electric Ind Ltd Formation of single crystal diamond layer
US5400738A (en) * 1989-03-07 1995-03-28 Sumitomo Electric Industries, Ltd. Method for producing single crystal diamond film
JP2006161075A (en) * 2004-12-03 2006-06-22 Shinko Seiki Co Ltd Hard carbon film, and its depositing method

Also Published As

Publication number Publication date
JPH0566359B2 (en) 1993-09-21

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term