JPS62174378A - Formation of thin hard carbon film - Google Patents
Formation of thin hard carbon filmInfo
- Publication number
- JPS62174378A JPS62174378A JP61015096A JP1509686A JPS62174378A JP S62174378 A JPS62174378 A JP S62174378A JP 61015096 A JP61015096 A JP 61015096A JP 1509686 A JP1509686 A JP 1509686A JP S62174378 A JPS62174378 A JP S62174378A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- hard carbon
- carbon
- monomer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021385 hard carbon Inorganic materials 0.000 title claims abstract description 24
- 230000015572 biosynthetic process Effects 0.000 title abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 239000000178 monomer Substances 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 9
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 6
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 23
- 239000010408 film Substances 0.000 abstract description 22
- 229910052799 carbon Inorganic materials 0.000 abstract description 20
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 20
- 239000007789 gas Substances 0.000 abstract description 12
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000654 additive Substances 0.000 abstract description 2
- 230000000996 additive effect Effects 0.000 abstract description 2
- 150000002430 hydrocarbons Chemical group 0.000 abstract description 2
- 239000001294 propane Substances 0.000 abstract description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 10
- 229910001882 dioxygen Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229920006125 amorphous polymer Polymers 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の技術的分野）
本発明は、硬質炭素薄膜の形成方法に関し、ざらに詳し
くはプラズマＣＶＤプロセスによるｒｆ！質炭素薄膜の
形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to a method for forming a hard carbon thin film, and more particularly, it relates to a method for forming a hard carbon thin film using an RF! The present invention relates to a method for forming a thin carbon film.
（発明の技術的背景ならびにその問題点）近年、エレク
ｉ・ロニクス材料、光学材料、超硬工具などへの応用が
期待されている硬質炭素薄膜に対する関心が高まってい
る。(Technical background of the invention and its problems) In recent years, there has been increasing interest in hard carbon thin films, which are expected to be applied to electronic materials, optical materials, cemented carbide tools, and the like.
炭素薄膜に関連するものとしては、プラズマプロセスに
よって有機モノマーから合成される有機重合性薄膜がす
でに知られている。この有機重合性薄膜は一般にアモル
ファスポリマーと称されるものであって、架橋性の高分
子でおる。Related to carbon thin films, organic polymerizable thin films synthesized from organic monomers using a plasma process are already known. This organic polymerizable thin film is generally called an amorphous polymer, and is made of a crosslinkable polymer.
ところが、有機モノマーを反応原料とする場合でも、七
ツマ−の種類やプラズマ放電の条件によってはグイヤモ
ント１人またはアモルファスカーホンなどの硬質炭素薄
膜か１ｑられることか見出されたことから、有機モノマ
ーを用いるプラス゛マＣＶＤプロセスが新たな関心を集
めている。However, even when organic monomers are used as reaction raw materials, it has been found that depending on the type of carbon and the conditions of plasma discharge, hard carbon thin films such as Guyamont or amorphous carbon may be reduced by 1q. Plasma CVD processes using plasma are attracting renewed interest.
これらの硬質炭素薄膜としては、ダイヤモンド、アモル
ファスカーホン、グラファイト等の様々な膜＠造が考え
られる。しかしながら、薄膜の構造、その生成のプロセ
スと放電条件との関係については、いまだ充分に明らか
にされていない。特にこれまてのプラズマプロセスの場
合には硬質炭素薄膜の生成の速度か遅く、薄膜の機能性
材料への応用を図っていく上で大きな問題であったが、
膜生成の速度を増大させる方策は依然として見出されて
いない。As these hard carbon thin films, various films such as diamond, amorphous carbon, graphite, etc. can be considered. However, the relationship between the thin film structure, its formation process, and discharge conditions has not yet been fully clarified. In particular, in the case of conventional plasma processes, the production speed of hard carbon thin films was slow, which was a major problem when trying to apply thin films to functional materials.
No strategy has yet been found to increase the rate of film formation.
また、多くの場合、薄膜中にグラフフィトが形成されて
いるため、硬質炭素膜の透光性か好ましくないなと、機
能性材料として応用するための特ｉ生の点で問題があっ
た。In addition, in many cases, graphite is formed in the thin film, so there are problems in terms of characteristics for application as a functional material, such as unfavorable light transmission of the hard carbon film.
したかって、このような問題のない硬質炭素膜の形成方
法を確立することと、そのためのプラズマＣＶＤプロセ
スの条件を選択することが強く望まれていた。Therefore, it has been strongly desired to establish a method for forming a hard carbon film that is free from such problems and to select plasma CVD process conditions for this purpose.
（発明の目的）
本発明は、上記のような従来技術に伴なう問題点を解決
しようとするものであり、プラズマＣＶＤプロセスによ
り、大きな薄膜生成速度によってアモルファスカーボン
などの硬質炭素薄膜を効率的に形成する方法を提供する
ことを目的としている。また本発明は、薄膜の職能特性
、待に透光性に優れた硬質炭素薄膜を効率的に形成する
方法を提供することを目的としている。本発明は、殿能
性薄膜、超硬薄膜などとしての応用が期待される硬質炭
素薄膜の製造に関して新たな展望を切拓くものというこ
とかできる。(Objective of the Invention) The present invention aims to solve the problems associated with the prior art as described above, and it is possible to efficiently form a thin film of hard carbon such as amorphous carbon by using a plasma CVD process at a high thin film production rate. The purpose is to provide a method for forming Another object of the present invention is to provide a method for efficiently forming a hard carbon thin film having excellent functional properties and, first of all, light transmittance. The present invention can be said to open up new prospects for the production of hard carbon thin films that are expected to be applied as functional thin films, superhard thin films, and the like.
（発明の概要）
本発明に係る硬質炭素薄膜の形成方法は、プラズマＣＶ
Ｄプロセスによって有機モノマーと水素ガスとにより炭
素薄膜を形成するにあたり、反応ガス系に酸素ガスを添
加することを特徴としている。(Summary of the Invention) The method for forming a hard carbon thin film according to the present invention includes plasma CV
When forming a carbon thin film using an organic monomer and hydrogen gas by the D process, oxygen gas is added to the reaction gas system.
本発明の方法によって形成されるアモルファスカーボン
等の薄膜は、Ｘ線マスク用として、あるいは半導体基板
用絶縁物、ラングミュアブロジェット（ＬＢ）膜用基板
、超硬工具などへの応用が期待されるものでおる。Thin films such as amorphous carbon formed by the method of the present invention are expected to be applied to X-ray masks, insulators for semiconductor substrates, substrates for Langmuir-Blodgett (LB) films, cemented carbide tools, etc. I'll go.
（発明の詳細な説明〉
本発明のプラズマＣＶＤプロセスに用いる装置について
は、平行平板電極による方式、高周波励起による方式な
どのプラズマプロセスに使用することのできる適宜のも
のを用いることができる。(Detailed Description of the Invention) As for the apparatus used in the plasma CVD process of the present invention, any suitable apparatus that can be used in a plasma process, such as a system using parallel plate electrodes or a system using high frequency excitation, can be used.
また、硬質炭素薄膜形成用の基板についても、３ｉウエ
ハー、カラス基板、プラスチックなど任意のものか使用
できる。Further, as for the substrate for forming the hard carbon thin film, any substrate such as a 3i wafer, a glass substrate, or plastic can be used.
薄膜形成のための反応には、成膜分子で必る有牧モノマ
ーと、水素ガス及び添加ガス成分としての酸素ガスを用
いるか、有機モノマーについては、メタン、エタン、プ
ロパン、エチレンなどの炭化水素を（まじめとする有機
モノマーを適宜に選択することかできる。For the reaction to form a thin film, we use Arimaki monomer, which is necessary for the film-forming molecules, and hydrogen gas and oxygen gas as an additive gas component, or for organic monomers, we use hydrocarbons such as methane, ethane, propane, and ethylene. (The organic monomer that takes this seriously can be selected as appropriate.)
プラズマＣＶＤの反応系に導入するこれらのガス成分の
流量は反応・容器、カス圧によって変わってくるか、た
とえば約１（ｌの容器ては右前モノマーか５０−Ｑ、１
ｓｅｃｍ水素が１００〜０．１ＳＣｃｍ、添加成分とし
ての酸素は、１００〜１ｓｅｃｍの範囲とすることがで
き、これら成分の導入の比率は、有■モノマーに対して
水素か、１０００・〜１、酸素か１０００〜０．１の範
囲としてよい。The flow rate of these gas components introduced into the plasma CVD reaction system varies depending on the reaction, container, and gas pressure.
sec hydrogen can be in the range of 100 to 0.1 SCcm, and oxygen as an added component can be in the range of 100 to 1 sec. It may be in the range of 1000 to 0.1.
反応系のカス圧力については１〜○、ＱｌＴｏｒｒとす
るのか好ましい。The scum pressure in the reaction system is preferably 1 to 0, QlTorr.
ざらに、プロセスの放電電力、放電時間は、使用する装
置、所望の硬質炭素薄膜の膜厚によって適宜に選択する
ことができる。たとえば平行平板電極による装置を用い
る場合には、放電電力は、５００〜１０（Ｗ）の範囲が
選択できる。In general, the discharge power and discharge time of the process can be appropriately selected depending on the equipment used and the desired thickness of the hard carbon thin film. For example, when using a device using parallel plate electrodes, the discharge power can be selected from a range of 500 to 10 (W).
以上のプロセス諸条件の選択によって、プラズマＣＶＤ
プロセスの反応系への酸素ガスの添加効果は顕著なもの
となり、特に、硬質炭素薄膜の膜成長速度は著しく増大
する。また、炭素薄膜の光透過度も著しく増大する。By selecting the above process conditions, plasma CVD
The effect of adding oxygen gas to the reaction system of the process becomes remarkable, and in particular, the growth rate of hard carbon thin films increases significantly. Furthermore, the light transmittance of the carbon thin film is also significantly increased.
酸素ガスの添加によりグラフフィトの生成が抑えられ、
ダイヤモンド１大、アモルファスカーホン等の硬質で、
光透過度の大きい炭素薄膜が効率的に形成されるものと
考えられる。The addition of oxygen gas suppresses the generation of graphite,
A hard material such as a large diamond or amorphous carphone,
It is considered that a carbon thin film with high light transmittance is efficiently formed.
このような本発明による効果は、これまでのプラズマＣ
ＶＤプロセス技術からは全く予期しえないものでおる。The effects of the present invention are as follows:
This is completely unexpected from VD process technology.
以下、本発明の異体的な実施例を説明する。Hereinafter, different embodiments of the present invention will be described.
実施例
酸素ノｊスを添加しない場合及び反応系に談素ガスを添
加する場合のいずれにおいても、炭素薄膜の形成は、平
行平板電極を有するプラズマＣＶＤ装置（ＣＰＤ−１１
０８、ＵＬＶＡＣ）を用いて、１３、’５６ｔ４Ｈｚ
、 ０． １〜０． ２Ｔｏｒｒのカス圧力、０．６〜
１．６Ｗ／ＣＩｉの放電の条件において行った。Example In both the case where oxygen gas is not added and the case where carbon gas is added to the reaction system, the carbon thin film is formed using a plasma CVD apparatus (CPD-11) having parallel plate electrodes.
08, ULVAC), 13,'56t4Hz
, 0. 1~0. 2 Torr scum pressure, 0.6~
The test was carried out under a discharge condition of 1.6 W/CIi.
基板としては３ｉウエハ、ガラス基板等を用いた。プラ
ズマ診断には、分光器と、マスフィルター型ガス分析計
を用いた。また、炭素薄膜の評価はＩＲ，ＥＳＣＡ等に
よって行った。A 3i wafer, a glass substrate, or the like was used as the substrate. A spectrometer and a mass filter type gas analyzer were used for plasma diagnosis. Further, the carbon thin film was evaluated by IR, ESCA, etc.
（１）まず酸素ガスを添加しないで、メタンと水素との
反応によって炭素薄膜を生成させた。(1) First, a carbon thin film was generated by a reaction between methane and hydrogen without adding oxygen gas.
メタン、及び水素のガス流量をそれぞれ２ ｓｅｃｍ、
及び８０ ｓｅｃｍとし、ガス圧力Ｑ、２ｒｏｒｒ、放
電電力１５０Ｗと、４００Ｗで各々２時間放電した。The gas flow rates of methane and hydrogen were each 2 sec,
and 80 sec, and discharged for 2 hours at a gas pressure Q of 2 rorr and a discharge power of 150 W and 400 W, respectively.
放電電力１５０Ｗの場合の膜成長速度のガス圧依存性は
、０．１３ｒｏｒｒ付近にピークを示すような特徴のあ
る特性を示した。The gas pressure dependence of the film growth rate when the discharge power was 150 W showed a characteristic characteristic with a peak around 0.13 rorr.
炭素薄膜の膜厚は、１５０Ｗ（２時間）、４００Ｗ（２
時間）の放電で、各々５００人と、１０００人でおった
。放電電力４００Ｗで生成させた炭素膜は１５０Ｗで生
成させた炭素膜と比べてより）農い黒色を示し、テスタ
ーによる導電試験でもより高い導電度を示した。The thickness of the carbon thin film was 150W (2 hours) and 400W (2 hours).
There were 500 people and 1000 people, respectively. The carbon film produced with a discharge power of 400 W exhibited a darker black color than the carbon film produced with a discharge power of 150 W, and also showed higher conductivity in a conductivity test using a tester.
（２）次に、メタンと水素の反応系に酸素カスを添加し
て、硬質炭素薄膜を形成した。(2) Next, oxygen residue was added to the reaction system of methane and hydrogen to form a hard carbon thin film.
メタン及び水素のガス流量は各々５ ｓｃｃｍ、５０ｓ
ｃｃｍ （メタンの比率１０％）とし、ガス圧力０゜１
Ｔｏｒｒ、放電電力４００Ｗで２時間！パ２電した。Methane and hydrogen gas flow rates are 5 sccm and 50 s, respectively.
ccm (methane ratio 10%), gas pressure 0°1
Torr, 2 hours with discharge power of 400W! I got a Pa2 train.
この条件下において反応系に酸素カスを・ニア人した。Under these conditions, oxygen residue was introduced into the reaction system.
酸素ガスの導入をＯ〜３４ ｓｅｃｍで変化させて炭素
薄膜した場合の膜成長速度を第１図に示した。FIG. 1 shows the film growth rate when a thin carbon film was formed by varying the introduction of oxygen gas from 0 to 34 seconds.
この第１図から明らかなように、酸素ガスを２ｓｅｃｍ
添加するだけで膜成長速度は２倍近くも増大する。微量
酸素の添加は、硬質炭素薄膜の形成速度を著しく増大す
ることがわかる。As is clear from this Figure 1, the oxygen gas was
Just adding it increases the film growth rate nearly twice as much. It can be seen that the addition of trace amounts of oxygen significantly increases the rate of formation of hard carbon films.
酸素の添加による炭素膜中の酸化物による顕著なＩＲの
吸収量の増加は認められなかった。No significant increase in the amount of IR absorption by oxides in the carbon film due to the addition of oxygen was observed.
また、炭素薄膜の光吸収特性を、光透過度として評価し
た。４００Ｗ（２時間）の放電を、前）小のメタン及び
水素のガス流量、ガス圧力の条件で行った場合、酸素の
流量を２ ｓｃｃｍ、１０１０５ｃ、２０ ｓｃｃｍと
変化させると、第２図に示した通りの光透過度の変化が
みられた。酸素ガスの添加によって、より透明な炭素膜
が得られる。In addition, the light absorption characteristics of the carbon thin film were evaluated as light transmittance. When a discharge of 400W (2 hours) is performed under the conditions of low methane and hydrogen gas flow rates and gas pressures, when the oxygen flow rate is changed to 2 sccm, 10105c, and 20 sccm, the results are shown in Figure 2. A change in light transmittance was observed as expected. A more transparent carbon film can be obtained by adding oxygen gas.
放電電力を変えた場合の光透過度は、第３図に示した通
りに変化した。低放電電力の場合、わずかの酸素の添加
（２ｓｅｃｍ）が炭素膜の透明性を向上させることかわ
かる。なお、この場合、メタン／水素の比は１０％でお
り、酸素流量は２ ｓｅｃｍ、カス圧力０．１Ｔｏｒｒ
とした。The light transmittance varied as shown in FIG. 3 when the discharge power was changed. It can be seen that in the case of low discharge power, the addition of a small amount of oxygen (2 sec) improves the transparency of the carbon film. In this case, the methane/hydrogen ratio is 10%, the oxygen flow rate is 2 sec, and the gas pressure is 0.1 Torr.
And so.
第１図は、メタン及び水素の反応系に導入する酸素ガス
の流岳の変化と硬質炭素薄膜の膜成長速度との関係を示
したものである。
また、第２図及び第３図は酸素流量と放電電力の各々に
ついて、その変化と炭素薄膜の光透過度との関係を示し
たものである。
代理人 弁理士 西 澤 利 夫
第 １ 図FIG. 1 shows the relationship between changes in the flow rate of oxygen gas introduced into a reaction system of methane and hydrogen and the growth rate of a hard carbon thin film. Furthermore, FIGS. 2 and 3 show the relationship between the changes in oxygen flow rate and discharge power, respectively, and the light transmittance of the carbon thin film. Agent Patent Attorney Toshio Nishizawa Figure 1
Claims (4)
素の存在下に反応させて硬質炭素薄膜を形成するにあた
り、反応系に酸素を添加することを特徴とする硬質炭素
薄膜の形成方法。(1) A method for forming a hard carbon thin film, which comprises adding oxygen to the reaction system when forming a hard carbon thin film by reacting an organic monomer in the presence of hydrogen using a plasma CVD process.
（１）項に記載の方法。(2) The method according to claim (1), wherein the organic monomer is a hydrocarbon.
第（１）項に記載の方法。(3) The method according to claim (1), wherein the hard carbon thin film is a transparent thin film.
特許請求の範囲第（１）項ないし第（３）項に記載の方
法。(4) The method according to claims (1) to (3), wherein the hard carbon thin film is an amorphous carbon thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61015096A JPS62174378A (en) | 1986-01-27 | 1986-01-27 | Formation of thin hard carbon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61015096A JPS62174378A (en) | 1986-01-27 | 1986-01-27 | Formation of thin hard carbon film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62174378A true JPS62174378A (en) | 1987-07-31 |
| JPS635468B2 JPS635468B2 (en) | 1988-02-03 |
Family
ID=11879307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61015096A Granted JPS62174378A (en) | 1986-01-27 | 1986-01-27 | Formation of thin hard carbon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62174378A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01246115A (en) * | 1988-03-26 | 1989-10-02 | Semiconductor Energy Lab Co Ltd | Method for forming coating film of carbon or material composed mainly of carbon |
| WO2001032513A1 (en) * | 1999-11-04 | 2001-05-10 | Mitsubishi Shoji Plastics Corporation | Nitrogen-free dlc film coated plastic container, and method and apparatus for manufacturing the same |
| JP2006161075A (en) * | 2004-12-03 | 2006-06-22 | Shinko Seiki Co Ltd | Hard carbon film, and its depositing method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0259462U (en) * | 1988-10-21 | 1990-05-01 | ||
| AU3723293A (en) * | 1992-02-28 | 1993-09-13 | Dow Chemical Company, The | Membrane-based fluid separations apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60145994A (en) * | 1984-01-06 | 1985-08-01 | テクニオン・リサ−チ・アンド・デベロツプメント・フアウンデ−シヨン・リミテツド | Formation of diamond-like carbon film on substrate |
| JPS61183198A (en) * | 1984-12-29 | 1986-08-15 | Kyocera Corp | Production of diamond film |
| JPS61222915A (en) * | 1985-03-29 | 1986-10-03 | Asahi Chem Ind Co Ltd | Vapor-phase synthesis of diamond |
-
1986
- 1986-01-27 JP JP61015096A patent/JPS62174378A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60145994A (en) * | 1984-01-06 | 1985-08-01 | テクニオン・リサ−チ・アンド・デベロツプメント・フアウンデ−シヨン・リミテツド | Formation of diamond-like carbon film on substrate |
| JPS61183198A (en) * | 1984-12-29 | 1986-08-15 | Kyocera Corp | Production of diamond film |
| JPS61222915A (en) * | 1985-03-29 | 1986-10-03 | Asahi Chem Ind Co Ltd | Vapor-phase synthesis of diamond |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01246115A (en) * | 1988-03-26 | 1989-10-02 | Semiconductor Energy Lab Co Ltd | Method for forming coating film of carbon or material composed mainly of carbon |
| WO2001032513A1 (en) * | 1999-11-04 | 2001-05-10 | Mitsubishi Shoji Plastics Corporation | Nitrogen-free dlc film coated plastic container, and method and apparatus for manufacturing the same |
| JP2006161075A (en) * | 2004-12-03 | 2006-06-22 | Shinko Seiki Co Ltd | Hard carbon film, and its depositing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS635468B2 (en) | 1988-02-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |