JPH01261214A - Production of diamond-containing or hard carbon film - Google Patents
Production of diamond-containing or hard carbon filmInfo
- Publication number
- JPH01261214A JPH01261214A JP63087980A JP8798088A JPH01261214A JP H01261214 A JPH01261214 A JP H01261214A JP 63087980 A JP63087980 A JP 63087980A JP 8798088 A JP8798088 A JP 8798088A JP H01261214 A JPH01261214 A JP H01261214A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- substrate
- film
- ions
- hard carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 34
- 239000010432 diamond Substances 0.000 title claims abstract description 34
- 229910021385 hard carbon Inorganic materials 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 150000002500 ions Chemical class 0.000 claims abstract description 38
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- 239000011261 inert gas Substances 0.000 claims abstract description 6
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- 239000010408 film Substances 0.000 abstract description 58
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- -1 argon ions Chemical class 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000012814 acoustic material Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000010812 mixed waste Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、表面保護材料、音響材料、硬質材料、ぬれ性
制御材料等に利用されるダイヤモンド含有膜または硬質
カーボン膜の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for producing a diamond-containing film or a hard carbon film used for surface protection materials, acoustic materials, hard materials, wettability control materials, and the like.
［従来の技術］
ダイヤモンドは、高硬度、良熱伝導性といった機械的、
電気的、光学的に優れた性質を有し、各種工業用材料と
して広く利用されている。[Conventional technology] Diamond has mechanical properties such as high hardness and good thermal conductivity.
It has excellent electrical and optical properties and is widely used as a variety of industrial materials.
しかしながら、超硬物質であるダイヤモンドは加工性に
難があり、このため、薄膜状ダイヤモンド、あるいはこ
れと類似の性質を有する硬質カーボン膜の製法の開発が
進められている。これら薄膜材料は、コーティングする
基体の形状を変えることにより任意の形状を取り得るた
め、広範囲の用途が期待できる。However, diamond, which is a superhard substance, has difficulty in machining, and for this reason, the development of a method for producing thin film diamond or a hard carbon film having similar properties is progressing. Since these thin film materials can take any shape by changing the shape of the substrate to be coated, they can be expected to have a wide range of uses.
このダイヤモンド含有膜または硬質カーボン膜の製造方
法に関しては、近年、種々の方法が提案されており（例
えば、エレクトロセラミックー８７／９ ｐ４６〜５
５．特開昭６０−１９５０９３号公報等）、その方法は
、大きく２つに分類される。１つは、物理気相蒸着（Ｐ
ＶＤ）法であり、低エネルギーのイオン照射と各種蒸着
法を組合わせたイオン化蒸着法、基体上に直接Ｃあるい
はＣ−ビームを照射する炭素ビーム法、カーボンターゲ
ットを不活性イオンでスパッタし、基体上にスパッタ蒸
着すると同時にイオン照射を行なうイオンビームスパッ
タ法等がこれに属する。Regarding the manufacturing method of this diamond-containing film or hard carbon film, various methods have been proposed in recent years (for example, Electroceramic 87/9 p46-5).
5. JP-A No. 60-195093, etc.), and the methods can be broadly classified into two. One is physical vapor deposition (P
VD) method, which is a combination of low-energy ion irradiation and various vapor deposition methods, a carbon beam method in which C or C-beam is directly irradiated onto the substrate, and a carbon target that is sputtered with inert ions to form a substrate. This includes an ion beam sputtering method in which ions are irradiated at the same time as sputter deposition is carried out.
もう１つは化学気相蒸着（ＣＶＤ）法であり、例えば、
マイクロ波ＣＶＤ法、電子衝撃ＣＶＤ法、プラズマＣＶ
Ｄ法等が知られている。The other method is chemical vapor deposition (CVD), for example,
Microwave CVD method, electron impact CVD method, plasma CV
D method etc. are known.
［発明が解決しようとする課題］
しかしながら、上記従来の方法では、得られたダイヤモ
ンド含有膜または硬質カーボン膜と基体との密着性が低
く、熱歪みや急激な力の付与によって剥離する等の問題
があった。[Problems to be Solved by the Invention] However, in the conventional method described above, the adhesion between the obtained diamond-containing film or hard carbon film and the substrate is low, and there are problems such as peeling due to thermal distortion or sudden application of force. was there.
本発明は、上記従来技術における問題を解決するために
なされたものであり、ダイヤモンド含有膜または硬質カ
ーボン膜と基体との密着性を高め、耐久性を向上させる
ことを目的とする。The present invention has been made to solve the problems in the prior art described above, and aims to improve the adhesion between a diamond-containing film or a hard carbon film and a substrate, thereby improving durability.
［課題を解決するための手段］
本発明者等は、上記目的を達成するために鋭意検討を行
なった結果、真空中、基体上に３０ｋｅＶ〜２００ ｋ
ｅ Ｖのエネルギーを有する不活性ガスイオンを、イ
オン照射量１×１０１７イオン／−以上の条件で照射し
、同時に該基体上に水素とメタンの混合ガスを導入する
ことにより、ダイヤモンド含有膜または硬質カーボン膜
が製造できること、しかも得られたダイヤモンド含有膜
または硬質カーボン膜はイオンのミキシング効果により
良好な密着性を有することを見出だした。[Means for Solving the Problems] The present inventors conducted intensive studies to achieve the above object, and as a result, the present inventors applied a voltage of 30 keV to 200 k on a substrate in vacuum.
A diamond-containing film or a hard It has been discovered that a carbon film can be produced, and that the resulting diamond-containing film or hard carbon film has good adhesion due to the ion mixing effect.
本発明において、基体上に照射する不活性ガスイオンと
しては、アルゴンイオン、ヘリウムイオン、ネオンイオ
ン、キセノンイオン等が好適に曲用される。照射する不
活性ガスイオンのエネルギーは３０ｋｅＶ〜２００ｋｅ
Ｖであることが望ましく、この範囲内で適切なミキシン
グ効果が得られる。エネルギーが３０ｋｅＶより低いと
、イオンによるスパッタ効果が主流となり、生成した膜
の表面が削りとられてしまう。また、逆に２００ｋｅＶ
を越えるとイオンが基体内部に注入されてしまい、イオ
ンのミキシング効果が基体内部で生じて膜との界面に作
用せず、密着性が向上しない。In the present invention, argon ions, helium ions, neon ions, xenon ions, etc. are preferably used as the inert gas ions to be irradiated onto the substrate. The energy of the inert gas ions to be irradiated is 30 keV to 200 ke.
V is desirable, and an appropriate mixing effect can be obtained within this range. When the energy is lower than 30 keV, the sputtering effect by ions becomes the mainstream, and the surface of the formed film is scraped off. Also, conversely, 200keV
If it exceeds 100%, ions will be injected into the substrate, and a mixing effect of ions will occur inside the substrate, and will not affect the interface with the film, resulting in no improvement in adhesion.
さらに好ましくは３０ｋｅＶ〜１００ｋｅＶの範囲とす
る。More preferably, the range is from 30 keV to 100 keV.
イオンの照射量は、少なくとも１×１０１７イオン／ｃ
ｍ２以上とすることが必要で、１×１０１７イオン／−
未満では膜が形成されない。The ion irradiation dose is at least 1×1017 ions/c
It is necessary to make it more than m2, 1 x 1017 ions/-
If it is less than that, no film will be formed.
本発明においては、イオン照射と同時に、基体上に水素
とメタンの混合ガスを導入するが、混合ガス中のメタン
濃度は生成する膜の性状を決定する重要なファクターの
１つである。ダイヤモンド含有膜はメタン濃度０．１ｍ
ｏ１％〜１．０ｍ。In the present invention, a mixed gas of hydrogen and methane is introduced onto the substrate simultaneously with ion irradiation, and the methane concentration in the mixed gas is one of the important factors that determines the properties of the produced film. The diamond-containing film has a methane concentration of 0.1m
o1%~1.0m.
１％の範囲で形成され、それ以外では硬質カーボン膜が
生成する。ここで、ダイヤモンド含有膜とはダイヤモン
ドを主体とする膜を、硬質カーボン膜はｉ−カーボンを
主体とする膜をそれぞれ意味し、いずれも通常少量のグ
ラファイトを含有する。It is formed within a range of 1%, and a hard carbon film is formed outside of this range. Here, the diamond-containing film means a film mainly composed of diamond, and the hard carbon film means a film mainly composed of i-carbon, both of which usually contain a small amount of graphite.
また、基体温度も重要なファクターの１つであり、基体
温度が８００°Ｃ〜１０００°Ｃの範囲でのみダイヤモ
ンド含有膜が形成され、８００℃より低温では硬質カー
ボン膜が形成される。ダイヤモンド含有膜の形成には、
メタン濃度および基体温度の両方が上記範囲を満たして
いることが必要で、例えばメタン濃度が上記範囲であっ
ても基体温度が８００℃より低い場合にはダイヤモンド
含有膜は生成せず、硬質カーボン膜が生成する。Further, the substrate temperature is also an important factor; a diamond-containing film is formed only when the substrate temperature is in the range of 800°C to 1000°C, and a hard carbon film is formed at a temperature lower than 800°C. For the formation of diamond-containing films,
It is necessary that both the methane concentration and the substrate temperature satisfy the above ranges. For example, even if the methane concentration is within the above range, if the substrate temperature is lower than 800°C, a diamond-containing film will not be formed and a hard carbon film will not form. is generated.
次に、図面に基づいて本発明方法の一例を説明する。第
１図には本発明のダイヤモンド含有ｗＡまたは硬質カー
ボン膜を製造する装置の概要を示す。Next, an example of the method of the present invention will be explained based on the drawings. FIG. 1 shows an outline of an apparatus for manufacturing a diamond-containing wA or hard carbon film according to the present invention.
図中、１は真空ポンプ、２は真空槽、３はイオン源、４
は基体ホルダー、５は基体、６は混合カス導入系、７は
イオンビーム、８は混合ガスである。In the figure, 1 is a vacuum pump, 2 is a vacuum chamber, 3 is an ion source, and 4
1 is a substrate holder, 5 is a substrate, 6 is a mixed waste introduction system, 7 is an ion beam, and 8 is a mixed gas.
先ず、基体５を基体ホルダー４に取付けて真空槽２中に
設置し、真空ポンプ１で５Ｘ１０−６Ｔ。First, the substrate 5 was attached to the substrate holder 4 and placed in the vacuum chamber 2, and the vacuum pump 1 was used to pump 5X10-6T.
ｒｒ以下になるまで真空排気する。一方、真空槽２に接
続されているイオン源３において不活性ガスイオンを生
成し、その後加速して所定のエネルギーを付与し、基体
５上に照射する。同時に混合ガス導入系６より導入した
水素とメタンの混合ガスを基体５上に吹付ける。この時
、真空槽２内の真空度は１×１Ｏ−５ＴＯｒｒ〜ｌＸ１
Ｏ−４ＴＯｒｒの範囲内とすることが望ましい。そして
、基体温度、イオン照射量等を上記した範囲内で任意に
設定することにより、基体上にダイヤモンド含有膜また
は硬質カーボン膜が形成される。Evacuate until the temperature is below rr. On the other hand, inert gas ions are generated in an ion source 3 connected to the vacuum chamber 2, and then accelerated to give a predetermined energy and irradiated onto the substrate 5. At the same time, a mixed gas of hydrogen and methane introduced from the mixed gas introduction system 6 is sprayed onto the substrate 5. At this time, the degree of vacuum in the vacuum chamber 2 is 1×1O-5TOrr~l×1
It is desirable that it be within the range of O-4TOrr. Then, by arbitrarily setting the substrate temperature, ion irradiation amount, etc. within the above-mentioned ranges, a diamond-containing film or a hard carbon film is formed on the substrate.
［作用］
イオン源より基体表面に向けて照射されたイオンは、混
合ガスに衝突してエネルギーを与え、ダイヤモンド含有
膜または硬質カーボン膜の生成反応に寄与する。[Function] The ions irradiated from the ion source toward the substrate surface collide with the mixed gas and give energy, contributing to the formation reaction of a diamond-containing film or a hard carbon film.
同時に、照射イオンのミキシング効果により膜と基体表
面層とが混ざり合い、膜と基体との間にこれらの混合層
を形成する。かくして、膜が基体から剥離しにくくなり
、基体と膜との密着性が格段に向上する。At the same time, the membrane and the substrate surface layer are mixed together due to the mixing effect of the irradiated ions, forming a mixed layer between the membrane and the substrate. In this way, the film becomes difficult to peel off from the substrate, and the adhesion between the substrate and the film is significantly improved.
［実施例］
以下、本発明を実施例により詳細に説明するが、本発明
はその要旨を越えない限り、これら実施例により限定さ
れるものではない。[Examples] Hereinafter, the present invention will be explained in detail using Examples, but the present invention is not limited by these Examples unless the gist of the invention is exceeded.
（１）第１図に示される装置を用い、第１表に示される
条件でダイヤモンド含有膜および硬質カーボン膜を作製
しな。基体５としてはシリコンを用い、これを基体ホル
ダー４に取付けな後、真空槽２中に設置し、真空ポンプ
１で３Ｘ１０−６Ｔｏｒｒまで真空排気した。その後、
基体５を第１表に示す温度まで加熱し、混合ガス導入系
６より水素とメタンの混合ガス（メタン濃度０．５％）
を導入して基体５上に吹付けた。真空槽２内は２×１０
−”Ｔｏｒｒを保持するよう真空ポンプ１で真空排気し
た。(1) Using the apparatus shown in FIG. 1, a diamond-containing film and a hard carbon film were produced under the conditions shown in Table 1. Silicon was used as the substrate 5, which was attached to the substrate holder 4, placed in the vacuum chamber 2, and evacuated to 3.times.10@-6 Torr using the vacuum pump 1. after that,
The substrate 5 is heated to the temperature shown in Table 1, and a mixed gas of hydrogen and methane (methane concentration 0.5%) is supplied from the mixed gas introduction system 6.
was introduced and sprayed onto the substrate 5. Inside vacuum chamber 2 is 2×10
The vacuum pump 1 was used to evacuate the sample to maintain a pressure of -''Torr.
その状態でイオン源３においてＡｒ イオンを生成し
、第１表に示すエネルギーを付与して基体５上に照射し
た。イオン照射量は１×１０１７イオン／−とした。（
実施例１〜４）。In this state, Ar ions were generated in the ion source 3 and irradiated onto the substrate 5 with the energy shown in Table 1. The ion irradiation amount was 1×10 17 ions/−. (
Examples 1-4).
得られた膜の状態をＡＥＳ（オージェエレクトロンエレ
クトロスコピー）、およびラマン分光によって評価した
。実施例１および実施例３のＡＥＳ分析結果を第２図（
１）に示す。実施例１と実施例３のスペクトルの相異は
、２４０〜２６０ｅ■のスペクトルプロファイルに観察
することができ、第２図（２）に示したダイヤモンドお
よびｉ−カーボンの標準スペクトルとの比較かられかる
ように、実施例１の膜はダイヤモンドのプロファイルに
、実施例３の膜はｉ−カーボンのプロファイルに近い。The state of the obtained film was evaluated by AES (Auger electron electroscopy) and Raman spectroscopy. The AES analysis results of Example 1 and Example 3 are shown in Figure 2 (
Shown in 1). The difference between the spectra of Example 1 and Example 3 can be observed in the spectral profiles from 240 to 260e, which can be seen from the comparison with the standard spectra of diamond and i-carbon shown in Figure 2 (2). As can be seen, the film of Example 1 has a profile similar to that of diamond, and the film of Example 3 has a profile similar to that of i-carbon.
また、実施例１のラマンスペクトルを第３図に示すが、
１３３６．ｆｆｌにダイヤモンドのピークが、１５５３
ａＴ！付近から１３００−に続くグラファイトのブロー
ドなピークが見られ、この膜がダイヤモンドおよびグラ
ファイトを含有することがわかる。In addition, the Raman spectrum of Example 1 is shown in FIG.
1336. Diamond peak at ffl, 1553
aT! A broad graphite peak extending from around 1300- is seen, indicating that this film contains diamond and graphite.
なお、第１表には、比較例１〜３としてイオンのエネル
ギー、または導入ガスを本発明の範囲外とした場合の製
造条件と得られた膜の状態を記した。In Table 1, as Comparative Examples 1 to 3, the manufacturing conditions and the state of the obtained membranes are shown when the ion energy or the introduced gas was outside the range of the present invention.
次に、実施例１〜４および比較例２〜３で得られた膜の
基体との密着性を評価するため、０．５ＲＡｌ２Ｏ３圧
子によるひつかき試験を行なった。ひっかき試験は５０
ｇ荷重、２０ ＩＴｎ／ ｍ ｉ ｎの条件で行ない、
判定は下記のようにした。Next, in order to evaluate the adhesion of the films obtained in Examples 1 to 4 and Comparative Examples 2 to 3 to the substrate, a strain test using a 0.5RA12O3 indenter was conducted. Scratch test is 50
g load, 20 ITn/min conditions,
The judgment was as follows.
○・・・傷なし
Δ・・・わずかに傷あり
×・・・傷あり
また、コンタクタンゲルメータ（接触角測定装置）によ
り、水のぬれ性を評価し、これらの結果を第１表に併記
した。○... No scratches Δ... Slight scratches ×... Scratches In addition, water wettability was evaluated using a contact angle gel meter (contact angle measuring device), and these results are also listed in Table 1. did.
第１表に明らかな如く、比較例２．３でははっきり傷が
認められるのに対し、実施例１．２ではひっかき傷は認
められず、実施例３．４ではわずかに傷が認められるも
のの、本発明のダイヤモンド含有膜または硬質カーボン
膜は良好な密着性を有していることがわかる。また、ぬ
れ性は、実施例１〜４のいずれも水の接触角が８０°以
上あり、良好な溌水性を示すことがわかる。As is clear from Table 1, in Comparative Example 2.3, scratches are clearly observed, whereas in Example 1.2, no scratches are observed, and in Example 3.4, although slight scratches are observed, It can be seen that the diamond-containing film or hard carbon film of the present invention has good adhesion. Furthermore, regarding the wettability, it can be seen that all of Examples 1 to 4 had a water contact angle of 80° or more, indicating good water repellency.
（２）Ａｒ イオンに代えてＨｅ イオンを照射し
た以外は実施例１と同様の条件で成膜を行なった。得ら
れた膜の状態をＡＥＳおよびラマン分光で評価したとこ
ろ、ダイヤモンドを主体とする膜が生成しており、ひつ
かき試験およびぬれ性評価の結果も良好であった。また
、同様の結果が、Ｎｅ＋イオン、Ｘｅ＋イオンについて
も得られた。(2) Film formation was performed under the same conditions as in Example 1 except that He 2 ions were irradiated instead of Ar 2 ions. When the state of the obtained film was evaluated by AES and Raman spectroscopy, it was found that a film mainly composed of diamond had been formed, and the results of the scratch test and wettability evaluation were also good. Similar results were also obtained for Ne+ ions and Xe+ ions.
［発明の効果コ
本発明によれば、基体との密着性が高く、耐久性に優れ
たダイヤモンド含有膜または硬質カーボン膜を製造する
ことができる。また、溌水性にも優れているので、表面
を利用したぬれ性制御薄膜 、等、利用範囲が広く、
利用価値が大である。[Effects of the Invention] According to the present invention, a diamond-containing film or a hard carbon film that has high adhesion to a substrate and excellent durability can be produced. It also has excellent water repellency, so it can be used in a wide range of applications, such as wettability control thin films that utilize the surface.
It has great utility value.
さらに、従来のＰＶＤ法またはＣＶＤ法では、基体上の
特定部位にのみ膜を形成しようとする場合、マスクを用
いるが、形成温度が高いなめに反応を起こしたり、周辺
を汚したりするおそれがある。これに対し、本発明の方
法では、照射イオンの径を絞り、所定の領域を走査する
ことにより特定部位に膜を形成することが可能であり、
未照射の周辺への悪影響を及ぼすことがない。Furthermore, in conventional PVD or CVD methods, a mask is used when attempting to form a film only on a specific region on a substrate, but the high formation temperature may cause a reaction or contaminate the surrounding area. . In contrast, in the method of the present invention, it is possible to form a film at a specific site by narrowing down the diameter of the irradiated ions and scanning a predetermined area.
There is no adverse effect on the surrounding areas that have not been irradiated.
第１図は本発明のダイヤモンド含有膜または硬質カーボ
ン膜を製造する装置の一例を示す概略図、第２図は実施
例１および実施例３で得られた膜のＡＥＳカーボンスペ
クトル図、第３図は実施例１で得られた膜のラマンスペ
クトル図である。
１・・・・・・真空ポンプ
２・・・・・・真空槽
３・・・・・・イオン源
４・・・・・・基体ホルダー
５・・・・・・基体
６・・・・・・混合ガス導入系
７・・・・・・イオンビーム
８・・・・・・混合ガス
第１ＲFig. 1 is a schematic diagram showing an example of an apparatus for producing a diamond-containing film or hard carbon film of the present invention, Fig. 2 is an AES carbon spectrum diagram of the films obtained in Example 1 and Example 3, and Fig. 3 is a Raman spectrum diagram of the film obtained in Example 1. 1... Vacuum pump 2... Vacuum chamber 3... Ion source 4... Substrate holder 5... Substrate 6...・Mixed gas introduction system 7...Ion beam 8...Mixed gas 1R
Claims (4)
ネルギーを有する不活性ガスイオンを、イオン照射量１
×１０＾１＾７イオン／ｃｍ＾２以上で照射し、同時に
該基体上に水素とメタンの混合ガスを導入することを特
徴とするダイヤモンド含有膜または硬質カーボン膜の製
造方法。(1) In a vacuum, inert gas ions having an energy of 30 keV to 200 keV are applied to the substrate at an ion irradiation amount of 1
A method for producing a diamond-containing film or a hard carbon film, which comprises irradiating with 10^1^7 ions/cm^2 or more and simultaneously introducing a mixed gas of hydrogen and methane onto the substrate.
０ｍｏｌ％である請求項１記載のダイヤモンド含有膜の
製造方法。(2) The methane concentration in the mixed gas is between 0.1 mol% and 1.
The method for producing a diamond-containing film according to claim 1, wherein the content is 0 mol%.
請求項１または２記載のダイヤモンド含有膜の製造方法
。(3) The method for producing a diamond-containing film according to claim 1 or 2, wherein the temperature of the substrate is in the range of 800°C to 1000°C.
ｋｅＶである請求項３記載のダイヤモンド含有膜の製造
方法。(4) The energy of inert ions is 30 keV to 100
4. The method for producing a diamond-containing film according to claim 3, wherein the voltage is keV.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63087980A JPH01261214A (en) | 1988-04-08 | 1988-04-08 | Production of diamond-containing or hard carbon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63087980A JPH01261214A (en) | 1988-04-08 | 1988-04-08 | Production of diamond-containing or hard carbon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01261214A true JPH01261214A (en) | 1989-10-18 |
Family
ID=13929972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63087980A Pending JPH01261214A (en) | 1988-04-08 | 1988-04-08 | Production of diamond-containing or hard carbon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01261214A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004284915A (en) * | 2003-03-25 | 2004-10-14 | Japan Science & Technology Agency | Amorphous carbon film formed body and production method therefor |
| JP2006259060A (en) * | 2005-03-16 | 2006-09-28 | Matsushita Electric Ind Co Ltd | Display panel assembling apparatus and display panel assembly method |
| JP2010189694A (en) * | 2009-02-17 | 2010-09-02 | Miyako Roller Industry Co | Aluminum roll and carbon roll having dlc film formed thereon at atmospheric temperature |
-
1988
- 1988-04-08 JP JP63087980A patent/JPH01261214A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004284915A (en) * | 2003-03-25 | 2004-10-14 | Japan Science & Technology Agency | Amorphous carbon film formed body and production method therefor |
| JP2006259060A (en) * | 2005-03-16 | 2006-09-28 | Matsushita Electric Ind Co Ltd | Display panel assembling apparatus and display panel assembly method |
| JP2010189694A (en) * | 2009-02-17 | 2010-09-02 | Miyako Roller Industry Co | Aluminum roll and carbon roll having dlc film formed thereon at atmospheric temperature |
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