JPH0566360B2 - - Google Patents

Info

Publication number
JPH0566360B2
JPH0566360B2 JP60170020A JP17002085A JPH0566360B2 JP H0566360 B2 JPH0566360 B2 JP H0566360B2 JP 60170020 A JP60170020 A JP 60170020A JP 17002085 A JP17002085 A JP 17002085A JP H0566360 B2 JPH0566360 B2 JP H0566360B2
Authority
JP
Japan
Prior art keywords
diamond
gas
film
hydrogen
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60170020A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61158899A (ja
Inventor
Hiroshi Aida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP60170020A priority Critical patent/JPS61158899A/ja
Publication of JPS61158899A publication Critical patent/JPS61158899A/ja
Publication of JPH0566360B2 publication Critical patent/JPH0566360B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60170020A 1985-07-31 1985-07-31 ダイヤモンド膜の製法 Granted JPS61158899A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60170020A JPS61158899A (ja) 1985-07-31 1985-07-31 ダイヤモンド膜の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60170020A JPS61158899A (ja) 1985-07-31 1985-07-31 ダイヤモンド膜の製法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP59278645A Division JPS61183198A (ja) 1984-12-29 1984-12-29 ダイヤモンド膜の製法

Publications (2)

Publication Number Publication Date
JPS61158899A JPS61158899A (ja) 1986-07-18
JPH0566360B2 true JPH0566360B2 (enrdf_load_stackoverflow) 1993-09-21

Family

ID=15897108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60170020A Granted JPS61158899A (ja) 1985-07-31 1985-07-31 ダイヤモンド膜の製法

Country Status (1)

Country Link
JP (1) JPS61158899A (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63117995A (ja) * 1986-11-05 1988-05-21 Kobe Steel Ltd ダイヤモンドの気相合成法
JPS63117996A (ja) * 1986-11-05 1988-05-21 Kobe Steel Ltd ダイヤモンドの気相合成法
JPH0776147B2 (ja) * 1986-12-27 1995-08-16 京セラ株式会社 ダイヤモンド膜の製造方法
JPH0811719B2 (ja) * 1986-12-27 1996-02-07 京セラ株式会社 ダイヤモンド膜の製造方法
JPS6461396A (en) * 1987-09-01 1989-03-08 Idemitsu Petrochemical Co Synthesis of diamond and installation therefor
JPH08757B2 (ja) * 1988-12-26 1996-01-10 住友電気工業株式会社 ダイヤモンドおよびその気相合成法
EP0371145B1 (en) * 1988-05-28 1994-02-16 Sumitomo Electric Industries, Ltd. Process for vapor-phase synthesis of diamond
JP2730144B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層形成法
JPH0647517B2 (ja) * 1989-03-17 1994-06-22 株式会社石塚研究所 高品位ダイヤモンド及びその製造方法
US5704976A (en) * 1990-07-06 1998-01-06 The United States Of America As Represented By The Secretary Of The Navy High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma
JPH04193794A (ja) * 1990-11-28 1992-07-13 Japan Steel Works Ltd:The ダイヤモンドの合成方法
JPH04193795A (ja) * 1990-11-28 1992-07-13 Japan Steel Works Ltd:The ダイヤモンドの合成方法
JPH059735A (ja) * 1991-07-09 1993-01-19 Kobe Steel Ltd ダイヤモンドの気相合成方法
JPH06263595A (ja) * 1993-03-10 1994-09-20 Canon Inc ダイヤモンド被覆部材及びその製造方法
CN105506576B (zh) * 2016-02-02 2018-04-13 太原理工大学 一种高品质自支撑金刚石厚膜的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030188A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
US3371996A (en) * 1964-01-20 1968-03-05 Henry J. Hibshman Diamond growth process
US3749760A (en) * 1970-04-24 1973-07-31 V Varnin Method of producing diamonds
JPS58135117A (ja) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater ダイヤモンドの製造法
JPS60191097A (ja) * 1984-03-08 1985-09-28 Mitsubishi Metal Corp 人工ダイヤモンドの析出生成方法
JP3140808B2 (ja) * 1991-09-09 2001-03-05 株式会社リコー 等倍結像素子

Also Published As

Publication number Publication date
JPS61158899A (ja) 1986-07-18

Similar Documents

Publication Publication Date Title
Küppers The hydrogen surface chemistry of carbon as a plasma facing material
JPH0566360B2 (enrdf_load_stackoverflow)
US5316804A (en) Process for the synthesis of hard boron nitride
DE69522115T2 (de) Verfahren zur herstellung einer hartstoffschutzschicht
CA2018886A1 (en) Process for making diamond, doped diamond, diamond-cubic boron nitride composite films at low temperature
JPH0566359B2 (enrdf_load_stackoverflow)
KR20200052125A (ko) 그래핀 형성 방법
JPH08225395A (ja) ホウ素ドープされたダイヤモンドの製造方法
May et al. Investigation of the addition of nitrogen-containing gases to a hot filament diamond chemical vapour deposition reactor
Sung et al. A novel form of carbon nitrides: Well-aligned carbon nitride nanotubes and their characterization
US4869929A (en) Process for preparing sic protective films on metallic or metal impregnated substrates
He et al. Preparation and characterization of RF-PECVD deposited films containing β-C3NN4 microcrystallites
JP2620252B2 (ja) 窒素含有硬質炭素膜の製造方法
JPH0471034B2 (enrdf_load_stackoverflow)
JP3246780B2 (ja) 硬質カーボン膜の形成方法および形成装置
JP2617539B2 (ja) 立方晶窒化ほう素膜の製造装置
JPS63265890A (ja) ダイヤモンド薄膜又はダイヤモンド状薄膜の製造方法
JPS63185894A (ja) ダイヤモンド薄膜又はダイヤモンド状薄膜の製造方法
JPS63215596A (ja) ダイヤモンド薄膜又はダイヤモンド状薄膜の製造方法
JP4480192B2 (ja) 高純度ダイヤモンドの合成方法
JPH01246357A (ja) 立方晶窒化ホウ素膜の製造方法
JPH0768078B2 (ja) ダイヤモンド膜の製造方法
JPS60112698A (ja) ダイヤモンドの製造方法
JPS63107899A (ja) 薄膜形成方法
JPH0524991B2 (enrdf_load_stackoverflow)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term