JPS6117798B2 - - Google Patents

Info

Publication number
JPS6117798B2
JPS6117798B2 JP1761282A JP1761282A JPS6117798B2 JP S6117798 B2 JPS6117798 B2 JP S6117798B2 JP 1761282 A JP1761282 A JP 1761282A JP 1761282 A JP1761282 A JP 1761282A JP S6117798 B2 JPS6117798 B2 JP S6117798B2
Authority
JP
Japan
Prior art keywords
single crystal
crystal
melt
liquid
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1761282A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58135626A (ja
Inventor
Shintaro Myazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1761282A priority Critical patent/JPS58135626A/ja
Publication of JPS58135626A publication Critical patent/JPS58135626A/ja
Publication of JPS6117798B2 publication Critical patent/JPS6117798B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP1761282A 1982-02-08 1982-02-08 化合物半導体単結晶の製造方法及び製造装置 Granted JPS58135626A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1761282A JPS58135626A (ja) 1982-02-08 1982-02-08 化合物半導体単結晶の製造方法及び製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1761282A JPS58135626A (ja) 1982-02-08 1982-02-08 化合物半導体単結晶の製造方法及び製造装置

Publications (2)

Publication Number Publication Date
JPS58135626A JPS58135626A (ja) 1983-08-12
JPS6117798B2 true JPS6117798B2 (enExample) 1986-05-09

Family

ID=11948701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1761282A Granted JPS58135626A (ja) 1982-02-08 1982-02-08 化合物半導体単結晶の製造方法及び製造装置

Country Status (1)

Country Link
JP (1) JPS58135626A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116195A (ja) * 1982-12-23 1984-07-04 Toshiba Corp 化合物半導体単結晶の製造方法
JPS6046993A (ja) * 1983-08-23 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上装置
JPS6046998A (ja) * 1983-08-26 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上方法及びそのための装置
JPS6090897A (ja) * 1983-10-25 1985-05-22 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体単結晶の製造方法および製造装置
JPS60210591A (ja) * 1984-04-05 1985-10-23 Hitachi Cable Ltd 半絶縁性ＧａＡｓ単結晶の製造方法
JPS60264390A (ja) * 1984-06-08 1985-12-27 Sumitomo Electric Ind Ltd 単結晶の育成方法
JPS6131381A (ja) * 1984-07-20 1986-02-13 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体結晶の引き上げ製造方法
DE68917054T2 (de) * 1988-08-19 1995-01-05 Mitsubishi Materials Corp Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen.

Also Published As

Publication number Publication date
JPS58135626A (ja) 1983-08-12

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