JPS61174199A - 二酸化テルル単結晶の育成方法 - Google Patents

二酸化テルル単結晶の育成方法

Info

Publication number
JPS61174199A
JPS61174199A JP1099385A JP1099385A JPS61174199A JP S61174199 A JPS61174199 A JP S61174199A JP 1099385 A JP1099385 A JP 1099385A JP 1099385 A JP1099385 A JP 1099385A JP S61174199 A JPS61174199 A JP S61174199A
Authority
JP
Japan
Prior art keywords
axis
crystal
pulling
optical element
tellurium dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1099385A
Other languages
English (en)
Japanese (ja)
Other versions
JPH049759B2 (enExample
Inventor
Toru Yamazaki
山崎　透
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tohoku Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Metal Industries Ltd filed Critical Tohoku Metal Industries Ltd
Priority to JP1099385A priority Critical patent/JPS61174199A/ja
Publication of JPS61174199A publication Critical patent/JPS61174199A/ja
Publication of JPH049759B2 publication Critical patent/JPH049759B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP1099385A 1985-01-25 1985-01-25 二酸化テルル単結晶の育成方法 Granted JPS61174199A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1099385A JPS61174199A (ja) 1985-01-25 1985-01-25 二酸化テルル単結晶の育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1099385A JPS61174199A (ja) 1985-01-25 1985-01-25 二酸化テルル単結晶の育成方法

Publications (2)

Publication Number Publication Date
JPS61174199A true JPS61174199A (ja) 1986-08-05
JPH049759B2 JPH049759B2 (enExample) 1992-02-21

Family

ID=11765668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1099385A Granted JPS61174199A (ja) 1985-01-25 1985-01-25 二酸化テルル単結晶の育成方法

Country Status (1)

Country Link
JP (1) JPS61174199A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2887263A1 (fr) * 2005-06-17 2006-12-22 Centre Nat Rech Scient Procede de preparation d'un monocristal de paratellurite
US20120070366A1 (en) * 2009-04-03 2012-03-22 Zengwei Ge High-Purity Tellurium Dioxide Single Crystal and Manufacturing Method Thereof
CN115478320A (zh) * 2022-09-22 2022-12-16 安徽光智科技有限公司 坩埚、制作方法和用其生长二氧化碲晶体的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919940A (enExample) * 1972-06-13 1974-02-21
JPS5855399A (ja) * 1981-09-29 1983-04-01 Nec Corp 二酸化テルル単結晶の切断方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919940A (enExample) * 1972-06-13 1974-02-21
JPS5855399A (ja) * 1981-09-29 1983-04-01 Nec Corp 二酸化テルル単結晶の切断方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2887263A1 (fr) * 2005-06-17 2006-12-22 Centre Nat Rech Scient Procede de preparation d'un monocristal de paratellurite
US20120070366A1 (en) * 2009-04-03 2012-03-22 Zengwei Ge High-Purity Tellurium Dioxide Single Crystal and Manufacturing Method Thereof
US8480996B2 (en) * 2009-04-03 2013-07-09 Research And Development Center, Shanghai Institute Of Ceramics High-purity tellurium dioxide single crystal and manufacturing method thereof
CN115478320A (zh) * 2022-09-22 2022-12-16 安徽光智科技有限公司 坩埚、制作方法和用其生长二氧化碲晶体的方法

Also Published As

Publication number Publication date
JPH049759B2 (enExample) 1992-02-21

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