JPS61174199A - 二酸化テルル単結晶の育成方法 - Google Patents
二酸化テルル単結晶の育成方法Info
- Publication number
- JPS61174199A JPS61174199A JP1099385A JP1099385A JPS61174199A JP S61174199 A JPS61174199 A JP S61174199A JP 1099385 A JP1099385 A JP 1099385A JP 1099385 A JP1099385 A JP 1099385A JP S61174199 A JPS61174199 A JP S61174199A
- Authority
- JP
- Japan
- Prior art keywords
- axis
- crystal
- pulling
- optical element
- tellurium dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1099385A JPS61174199A (ja) | 1985-01-25 | 1985-01-25 | 二酸化テルル単結晶の育成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1099385A JPS61174199A (ja) | 1985-01-25 | 1985-01-25 | 二酸化テルル単結晶の育成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61174199A true JPS61174199A (ja) | 1986-08-05 |
JPH049759B2 JPH049759B2 (enrdf_load_stackoverflow) | 1992-02-21 |
Family
ID=11765668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1099385A Granted JPS61174199A (ja) | 1985-01-25 | 1985-01-25 | 二酸化テルル単結晶の育成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61174199A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2887263A1 (fr) * | 2005-06-17 | 2006-12-22 | Centre Nat Rech Scient | Procede de preparation d'un monocristal de paratellurite |
US20120070366A1 (en) * | 2009-04-03 | 2012-03-22 | Zengwei Ge | High-Purity Tellurium Dioxide Single Crystal and Manufacturing Method Thereof |
CN115478320A (zh) * | 2022-09-22 | 2022-12-16 | 安徽光智科技有限公司 | 坩埚、制作方法和用其生长二氧化碲晶体的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4919940A (enrdf_load_stackoverflow) * | 1972-06-13 | 1974-02-21 | ||
JPS5855399A (ja) * | 1981-09-29 | 1983-04-01 | Nec Corp | 二酸化テルル単結晶の切断方法 |
-
1985
- 1985-01-25 JP JP1099385A patent/JPS61174199A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4919940A (enrdf_load_stackoverflow) * | 1972-06-13 | 1974-02-21 | ||
JPS5855399A (ja) * | 1981-09-29 | 1983-04-01 | Nec Corp | 二酸化テルル単結晶の切断方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2887263A1 (fr) * | 2005-06-17 | 2006-12-22 | Centre Nat Rech Scient | Procede de preparation d'un monocristal de paratellurite |
US20120070366A1 (en) * | 2009-04-03 | 2012-03-22 | Zengwei Ge | High-Purity Tellurium Dioxide Single Crystal and Manufacturing Method Thereof |
US8480996B2 (en) * | 2009-04-03 | 2013-07-09 | Research And Development Center, Shanghai Institute Of Ceramics | High-purity tellurium dioxide single crystal and manufacturing method thereof |
CN115478320A (zh) * | 2022-09-22 | 2022-12-16 | 安徽光智科技有限公司 | 坩埚、制作方法和用其生长二氧化碲晶体的方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH049759B2 (enrdf_load_stackoverflow) | 1992-02-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |