JPS61171179A - 半導体結合超伝導素子 - Google Patents

半導体結合超伝導素子

Info

Publication number
JPS61171179A
JPS61171179A JP60012133A JP1213385A JPS61171179A JP S61171179 A JPS61171179 A JP S61171179A JP 60012133 A JP60012133 A JP 60012133A JP 1213385 A JP1213385 A JP 1213385A JP S61171179 A JPS61171179 A JP S61171179A
Authority
JP
Japan
Prior art keywords
semiconductor
superconducting
interface
inas
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60012133A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0452631B2 (enrdf_load_stackoverflow
Inventor
Hideaki Takayanagi
英明 高柳
Goji Kawakami
剛司 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60012133A priority Critical patent/JPS61171179A/ja
Publication of JPS61171179A publication Critical patent/JPS61171179A/ja
Publication of JPH0452631B2 publication Critical patent/JPH0452631B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/10Junction-based devices
    • H10N60/11Single-electron tunnelling devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/10Junction-based devices
    • H10N60/128Junction-based devices having three or more electrodes, e.g. transistor-like structures

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP60012133A 1985-01-24 1985-01-24 半導体結合超伝導素子 Granted JPS61171179A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60012133A JPS61171179A (ja) 1985-01-24 1985-01-24 半導体結合超伝導素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60012133A JPS61171179A (ja) 1985-01-24 1985-01-24 半導体結合超伝導素子

Publications (2)

Publication Number Publication Date
JPS61171179A true JPS61171179A (ja) 1986-08-01
JPH0452631B2 JPH0452631B2 (enrdf_load_stackoverflow) 1992-08-24

Family

ID=11797028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60012133A Granted JPS61171179A (ja) 1985-01-24 1985-01-24 半導体結合超伝導素子

Country Status (1)

Country Link
JP (1) JPS61171179A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63177573A (ja) * 1987-01-19 1988-07-21 Hitachi Ltd 超伝導トランジスタ
US5126315A (en) * 1987-02-27 1992-06-30 Hitachi, Ltd. High tc superconducting device with weak link between two superconducting electrodes
US5138401A (en) * 1987-08-24 1992-08-11 Semiconductor Energy Laboratory Co., Ltd. Electronic devices utilizing superconducting materials
JPH04119592U (ja) * 1991-04-11 1992-10-26 株式会社シブタニ 片開き扉の間隙閉鎖装置
JPH04360589A (ja) * 1991-06-07 1992-12-14 Nippon Telegr & Teleph Corp <Ntt> 半導体結合超伝導素子

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63177573A (ja) * 1987-01-19 1988-07-21 Hitachi Ltd 超伝導トランジスタ
US5126315A (en) * 1987-02-27 1992-06-30 Hitachi, Ltd. High tc superconducting device with weak link between two superconducting electrodes
US5552375A (en) * 1987-02-27 1996-09-03 Hitachi, Ltd. Method for forming high Tc superconducting devices
US6069369A (en) * 1987-02-27 2000-05-30 Hitachi, Ltd. Superconducting device
US5138401A (en) * 1987-08-24 1992-08-11 Semiconductor Energy Laboratory Co., Ltd. Electronic devices utilizing superconducting materials
JPH04119592U (ja) * 1991-04-11 1992-10-26 株式会社シブタニ 片開き扉の間隙閉鎖装置
JPH04360589A (ja) * 1991-06-07 1992-12-14 Nippon Telegr & Teleph Corp <Ntt> 半導体結合超伝導素子

Also Published As

Publication number Publication date
JPH0452631B2 (enrdf_load_stackoverflow) 1992-08-24

Similar Documents

Publication Publication Date Title
US5105241A (en) Field effect transistor
JPS6139582A (ja) 高電子移動度トランジスタ
JPH07118531B2 (ja) ホットエレクトロン・ユニポーラ・トランジスタ
JPH07123164B2 (ja) 半導体装置
US4903091A (en) Heterojunction transistor having bipolar characteristics
JPS61171179A (ja) 半導体結合超伝導素子
US4860067A (en) Semiconductor heterostructure adapted for low temperature operation
JPS633467A (ja) 半導体装置
JPS59181069A (ja) 半導体装置
JPS63161677A (ja) 電界効果トランジスタ
Akazaki et al. Superconducting junctions using a 2DEG in a strained InAs quantum well inserted into an InAlAs/InGaAs MD structure
JPS61144881A (ja) 半導体装置
JP3021894B2 (ja) ヘテロ接合電界効果トランジスタ
JPS61268069A (ja) 半導体装置
JPS60193382A (ja) 半導体装置
JP3107325B2 (ja) 半導体結合超伝導素子
JPH0452632B2 (enrdf_load_stackoverflow)
JPH0620142B2 (ja) 半導体装置
JPS61248569A (ja) ヘテロ接合電界効果トランジスタ
JP2917530B2 (ja) 半導体装置
JPS60145671A (ja) 集積型半導体装置
JPS60201664A (ja) シヨツトキ接合型電界効果トランジスタ及びその製法
JPS60136380A (ja) 半導体装置
JPS62245681A (ja) 負性微分抵抗電界効果トランジスタ
JPS61171170A (ja) 半導体装置