JPH0452632B2 - - Google Patents
Info
- Publication number
- JPH0452632B2 JPH0452632B2 JP60012134A JP1213485A JPH0452632B2 JP H0452632 B2 JPH0452632 B2 JP H0452632B2 JP 60012134 A JP60012134 A JP 60012134A JP 1213485 A JP1213485 A JP 1213485A JP H0452632 B2 JPH0452632 B2 JP H0452632B2
- Authority
- JP
- Japan
- Prior art keywords
- superconducting
- type
- semiconductor
- inversion layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 17
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 12
- 230000000694 effects Effects 0.000 claims description 9
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 10
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002887 superconductor Substances 0.000 description 7
- 230000005641 tunneling Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/11—Single-electron tunnelling devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60012134A JPS61171180A (ja) | 1985-01-24 | 1985-01-24 | 半導体結合超伝導素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60012134A JPS61171180A (ja) | 1985-01-24 | 1985-01-24 | 半導体結合超伝導素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61171180A JPS61171180A (ja) | 1986-08-01 |
JPH0452632B2 true JPH0452632B2 (enrdf_load_stackoverflow) | 1992-08-24 |
Family
ID=11797053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60012134A Granted JPS61171180A (ja) | 1985-01-24 | 1985-01-24 | 半導体結合超伝導素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61171180A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910002311B1 (ko) * | 1987-02-27 | 1991-04-11 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 디바이스 |
JPH0724338B2 (ja) * | 1987-03-18 | 1995-03-15 | 株式会社日立製作所 | 電子装置 |
JPS6486575A (en) * | 1987-06-17 | 1989-03-31 | Hitachi Ltd | Superconducting device |
-
1985
- 1985-01-24 JP JP60012134A patent/JPS61171180A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61171180A (ja) | 1986-08-01 |
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