JPS61171180A - 半導体結合超伝導素子 - Google Patents
半導体結合超伝導素子Info
- Publication number
- JPS61171180A JPS61171180A JP60012134A JP1213485A JPS61171180A JP S61171180 A JPS61171180 A JP S61171180A JP 60012134 A JP60012134 A JP 60012134A JP 1213485 A JP1213485 A JP 1213485A JP S61171180 A JPS61171180 A JP S61171180A
- Authority
- JP
- Japan
- Prior art keywords
- type
- semiconductor
- superconducting
- inversion layer
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 12
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 abstract description 17
- 239000002184 metal Substances 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002887 superconductor Substances 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 15
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000005641 tunneling Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- 238000006463 Yamaguchi esterification reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/11—Single-electron tunnelling devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60012134A JPS61171180A (ja) | 1985-01-24 | 1985-01-24 | 半導体結合超伝導素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60012134A JPS61171180A (ja) | 1985-01-24 | 1985-01-24 | 半導体結合超伝導素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61171180A true JPS61171180A (ja) | 1986-08-01 |
| JPH0452632B2 JPH0452632B2 (enrdf_load_stackoverflow) | 1992-08-24 |
Family
ID=11797053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60012134A Granted JPS61171180A (ja) | 1985-01-24 | 1985-01-24 | 半導体結合超伝導素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61171180A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63228696A (ja) * | 1987-03-18 | 1988-09-22 | Hitachi Ltd | 電子装置 |
| JPS6486575A (en) * | 1987-06-17 | 1989-03-31 | Hitachi Ltd | Superconducting device |
| US5126315A (en) * | 1987-02-27 | 1992-06-30 | Hitachi, Ltd. | High tc superconducting device with weak link between two superconducting electrodes |
-
1985
- 1985-01-24 JP JP60012134A patent/JPS61171180A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5126315A (en) * | 1987-02-27 | 1992-06-30 | Hitachi, Ltd. | High tc superconducting device with weak link between two superconducting electrodes |
| US5552375A (en) * | 1987-02-27 | 1996-09-03 | Hitachi, Ltd. | Method for forming high Tc superconducting devices |
| US6069369A (en) * | 1987-02-27 | 2000-05-30 | Hitachi, Ltd. | Superconducting device |
| JPS63228696A (ja) * | 1987-03-18 | 1988-09-22 | Hitachi Ltd | 電子装置 |
| JPS6486575A (en) * | 1987-06-17 | 1989-03-31 | Hitachi Ltd | Superconducting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0452632B2 (enrdf_load_stackoverflow) | 1992-08-24 |
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