JPS61160746A - リソグラフイ−法及びリソグラフイ−用マスク保持体 - Google Patents
リソグラフイ−法及びリソグラフイ−用マスク保持体Info
- Publication number
- JPS61160746A JPS61160746A JP60001772A JP177285A JPS61160746A JP S61160746 A JPS61160746 A JP S61160746A JP 60001772 A JP60001772 A JP 60001772A JP 177285 A JP177285 A JP 177285A JP S61160746 A JPS61160746 A JP S61160746A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask holder
- silicon wafer
- polyimide
- lithography
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60001772A JPS61160746A (ja) | 1985-01-08 | 1985-01-08 | リソグラフイ−法及びリソグラフイ−用マスク保持体 |
| DE19863600169 DE3600169A1 (de) | 1985-01-07 | 1986-01-07 | Maskenstruktur zur lithographie, verfahren zu ihrer herstellung und lithographisches verfahren |
| US07/170,688 US4837123A (en) | 1985-01-07 | 1988-03-14 | Mask structure for lithography, method of preparation thereof and lithographic method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60001772A JPS61160746A (ja) | 1985-01-08 | 1985-01-08 | リソグラフイ−法及びリソグラフイ−用マスク保持体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61160746A true JPS61160746A (ja) | 1986-07-21 |
| JPH0482048B2 JPH0482048B2 (enrdf_load_stackoverflow) | 1992-12-25 |
Family
ID=11510862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60001772A Granted JPS61160746A (ja) | 1985-01-07 | 1985-01-08 | リソグラフイ−法及びリソグラフイ−用マスク保持体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61160746A (enrdf_load_stackoverflow) |
-
1985
- 1985-01-08 JP JP60001772A patent/JPS61160746A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0482048B2 (enrdf_load_stackoverflow) | 1992-12-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4677042A (en) | Mask structure for lithography, method for preparation thereof and lithographic method | |
| US4037111A (en) | Mask structures for X-ray lithography | |
| US4837123A (en) | Mask structure for lithography, method of preparation thereof and lithographic method | |
| JPS61160746A (ja) | リソグラフイ−法及びリソグラフイ−用マスク保持体 | |
| JPS62142323A (ja) | X線ホトリソグラフイに使用するマスクの加法的方法及びその結果得られるマスク | |
| JPH0481852B2 (enrdf_load_stackoverflow) | ||
| TWI296335B (en) | Optical element with an opaque chrome coating having an aperture and method of making same | |
| JPS61160747A (ja) | リソグラフイ−法及びリソグラフイ−用マスク保持体 | |
| JPH0442666B2 (enrdf_load_stackoverflow) | ||
| JPS61118754A (ja) | X線リソグラフイ−法及びx線リソグラフイ−用マスク保持体 | |
| JPH0481855B2 (enrdf_load_stackoverflow) | ||
| JPS61159654A (ja) | リソグラフイ−法及びリソグラフイ−用マスク保持体 | |
| JPH0481854B2 (enrdf_load_stackoverflow) | ||
| JPS62108522A (ja) | リソグラフィー用マスク構造体の製造方法、及び薄膜の製造方法 | |
| JPH0690998B2 (ja) | X線リソグラフィー用マスク構造体の製造方法 | |
| JPS61140942A (ja) | リソグラフイ−用マスク構造体 | |
| JPH0316116A (ja) | X線リソグラフィー用マスク構造体及びそれを用いたx線露光方法 | |
| JPS61110139A (ja) | X線リソグラフイ−法及びx線リソグラフイ−用マスク保持体 | |
| JPH0423819B2 (enrdf_load_stackoverflow) | ||
| JPH1012526A (ja) | X線露光用マスク及びその製造方法 | |
| JPH04142023A (ja) | X線露光装置およびx線露光方法 | |
| JPS6376324A (ja) | X線露光用マスクの製造方法 | |
| JPS63169026A (ja) | リソグラフイ−用マスク構造体 | |
| JP3232853B2 (ja) | レーザ加工用誘電体マスクとその製造方法 | |
| JPS62158324A (ja) | X線露光用マスクの製造方法 |