JPS61158969U - - Google Patents

Info

Publication number
JPS61158969U
JPS61158969U JP1985042245U JP4224585U JPS61158969U JP S61158969 U JPS61158969 U JP S61158969U JP 1985042245 U JP1985042245 U JP 1985042245U JP 4224585 U JP4224585 U JP 4224585U JP S61158969 U JPS61158969 U JP S61158969U
Authority
JP
Japan
Prior art keywords
semiconductor laser
photodiode
laser device
semiconductor substrate
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1985042245U
Other languages
English (en)
Other versions
JPH0419819Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985042245U priority Critical patent/JPH0419819Y2/ja
Priority to KR2019860002759U priority patent/KR920002914Y1/ko
Priority to DE8686302086T priority patent/DE3680223D1/de
Priority to US06/841,797 priority patent/US4764931A/en
Priority to EP86302086A priority patent/EP0196200B1/en
Publication of JPS61158969U publication Critical patent/JPS61158969U/ja
Application granted granted Critical
Publication of JPH0419819Y2 publication Critical patent/JPH0419819Y2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)

Description

【図面の簡単な説明】
第１図乃至第２図は本考案半導体レーザ装置の
実施の一例を示すもので、第１図は斜視図、第２
図は第１図の２―２線に沿う断面図、第３図Ａ乃
至Ｄは第１図及び第２図に示した半導体レーザ装
置の製造方法を工程順に示す斜視図、第４図はカ
ツテイング時の状態を示す断面図、第５図は検査
方法を説明するためのもので、同図Ａは平面図、
同図Ｂは断面図、第６図は半導体レーザ装置の１
つの従来例を示す斜視図、第７図Ａ乃至Ｅは第６
図に示した半導体レーザ装置の製造方法を工程順
に示す斜視図である。 符号の説明、１…半導体基板、３…半導体レー
ザ素子、５…ＡＰＣ用フオトダイオード、８，９
ａ，９ｂ，９ｃ…検査用フオトダイオード。

Claims (1)

  1. 【実用新案登録請求の範囲】 半導体基板の表面の前側領域上に半導体レーザ
    素子を固着し、 上記半導体基板の表面の後側領域表面部に検査
    用フオトダイオードを形成し、 上記半導体基板の表面の中間領域にＡＰＣ用フ
    オトダイオードを形成し、 てなることを特徴とする半導体レーザ装置。
JP1985042245U 1985-03-23 1985-03-23 Expired JPH0419819Y2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1985042245U JPH0419819Y2 (ja) 1985-03-23 1985-03-23
KR2019860002759U KR920002914Y1 (ko) 1985-03-23 1986-03-10 반도체 레이저장치
DE8686302086T DE3680223D1 (de) 1985-03-23 1986-03-20 Halbleiterlaser-vorrichtung.
US06/841,797 US4764931A (en) 1985-03-23 1986-03-20 Semiconductor device
EP86302086A EP0196200B1 (en) 1985-03-23 1986-03-20 Semiconductor laser devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985042245U JPH0419819Y2 (ja) 1985-03-23 1985-03-23

Publications (2)

Publication Number Publication Date
JPS61158969U true JPS61158969U (ja) 1986-10-02
JPH0419819Y2 JPH0419819Y2 (ja) 1992-05-06

Family

ID=12630639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985042245U Expired JPH0419819Y2 (ja) 1985-03-23 1985-03-23

Country Status (5)

Country Link
US (1) US4764931A (ja)
EP (1) EP0196200B1 (ja)
JP (1) JPH0419819Y2 (ja)
KR (1) KR920002914Y1 (ja)
DE (1) DE3680223D1 (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906839A (en) * 1986-05-01 1990-03-06 Pencom International Corp. Hybrid surface emitting laser and detector
JPS63124486A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体レ−ザの製造方法
US4905216A (en) * 1986-12-04 1990-02-27 Pencom International Corporation Method for constructing an optical head by varying a hologram pattern
US4945524A (en) * 1987-04-15 1990-07-31 Pioneer Electronic Corporation Compact optical pickup apparatus for optical disk player
US4999842A (en) * 1989-03-01 1991-03-12 At&T Bell Laboratories Quantum well vertical cavity laser
JPH02271586A (ja) * 1989-04-12 1990-11-06 Mitsubishi Electric Corp 半導体レーザ装置
US4980549A (en) * 1990-03-05 1990-12-25 Eastman Kodak Company Beam position sensor for a light beam scanner having emitter and detector disposed along the same optical axis
DE59207920D1 (de) * 1991-04-24 1997-03-06 Siemens Ag Optoelektronische Sendevorrichtung
US5293032A (en) * 1992-02-10 1994-03-08 Sydney Urshan Digital data optical recording and playback system
US5319182A (en) * 1992-03-04 1994-06-07 Welch Allyn, Inc. Integrated solid state light emitting and detecting array and apparatus employing said array
JPH0894938A (ja) * 1994-09-21 1996-04-12 Sony Corp 共焦点顕微鏡並びに光記録再生装置
DE19742150C1 (de) * 1997-09-24 1999-04-22 Siemens Nixdorf Inf Syst Verfahren zur Herstellung einer optischen Speicherplatte und zu deren Herstellung geeigneter CD-R-Plattenrohling
US5903584A (en) * 1998-01-05 1999-05-11 Youngtek Electronics Laser diode package
JP2008004914A (ja) * 2006-05-22 2008-01-10 Toshiba Corp 半導体レーザ装置
EP2171811B1 (en) * 2007-06-27 2015-05-20 Koninklijke Philips N.V. Optical sensor module and its manufacture
US9570648B2 (en) * 2012-06-15 2017-02-14 Intersil Americas LLC Wafer level optical proximity sensors and systems including wafer level optical proximity sensors
US9721837B2 (en) 2015-04-16 2017-08-01 Intersil Americas LLC Wafer level optoelectronic device packages with crosstalk barriers and methods for making the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1073460A (en) * 1964-07-31 1967-06-28 Battelle Development Corp Semiconductor devices
DE2542174C3 (de) * 1974-09-21 1980-02-14 Nippon Electric Co., Ltd., Tokio Halbleiterlaservorrichtung
DE2737345C2 (de) * 1976-08-20 1991-07-25 Canon K.K., Tokio/Tokyo Halbleiterlaser-Vorrichtung mit einem Peltier-Element
JPS6195591A (ja) * 1984-10-16 1986-05-14 Sony Corp 半導体レ−ザ

Also Published As

Publication number Publication date
DE3680223D1 (de) 1991-08-22
KR860012475U (ko) 1986-10-10
EP0196200B1 (en) 1991-07-17
EP0196200A3 (en) 1988-01-13
KR920002914Y1 (ko) 1992-05-08
US4764931A (en) 1988-08-16
EP0196200A2 (en) 1986-10-01
JPH0419819Y2 (ja) 1992-05-06

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