GB1073460A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1073460A
GB1073460A GB2793565A GB2793565A GB1073460A GB 1073460 A GB1073460 A GB 1073460A GB 2793565 A GB2793565 A GB 2793565A GB 2793565 A GB2793565 A GB 2793565A GB 1073460 A GB1073460 A GB 1073460A
Authority
GB
United Kingdom
Prior art keywords
regions
junction
laser
semi
windows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2793565A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Battelle Development Corp
Original Assignee
Battelle Development Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Battelle Development Corp filed Critical Battelle Development Corp
Publication of GB1073460A publication Critical patent/GB1073460A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Radiation-Therapy Devices (AREA)

Abstract

1,073,460. Semi-conductor devices; lasers. BATTELLE DEVELOPMENT CORPORATION. July 1, 1965 [July 31, 1964], No. 27935/65. Headings H1C and H1K. A light-coupled semi-conductor device comprises a junction diode laser and a light-responsive junction. As shown, Fig. 2, a laser junction 28b having a coplanar photodiode junction 49b, 50b located at each end is produced by masking an N-type GaAs body 26b, doped with Te, with an evaporated layer of silicon monoxide using a photo-resist technique and diffusing-in Cr to produce semi-insulating regions 53b, 54b. Alternatively Cu or O can be used to produce these regions. The surface of the device is cleaned and masked with a layer of silicon monoxide in which three windows are formed, the two end windows being covered with a thin layer of silicon monoxide to retard the diffusion of impurities. Zn is diffused-in to produce P-type regions 24b, 29b, 32b, the doping level in region 24 being so high that it can be considered to be uncompensated by the Te atoms, while regions 29b, 32b have layers 31b, 34b which are partially compensated with Te. Windows are etched in the mask and Au is evaporated-on to form contacts. Alternatively the lower face contacts may be applied by ultrasonic soldering. Adhesion of the metal contacts can be improved by thermo-compression bonding. Variations are described with reference to Fig. 1 (not shown), in which a device has regions of complementary conductivity type and has the semi-insulating regions (53, 54) omitted, Fig. 4 (not shown), in which the photodiodes are replaced by phototransistors with the collector junctions (49d, 50d) coplanar with the laser junction (28d), Fig. 3 (not shown) in which the device of Fig. 4 has regions of complementary conductivity type, and Fig. 6 (not shown), in which one of the photodiodes is replaced by a reflective layer (70) of Al or Ag. Further variations are described with reference to Figs. 7 to 11 (not shown) in which the light emitted by a laser is amplified by a secondary laser before being applied to the detector junction which may comprise a photodiode or phototransistor. The laser may be anisotropically stressed in an axial direction, Fig. 12 (not shown), or by a bending moment, Fig. 13 (not shown), to increase the polarization of the spontaneous emission in the desired direction and hence increase the stimulated emission. The stress may also be applied to the amplifying lasers and to the detectors, Fig. 14 (not shown), to increase their amplification and absorption respectively. A bending stress may be produced by bonding the device to a bimetallic strip at an elevated temperature at which the strip is flat so that on cooling to normal operating temperatures the strip bends. The required partial compensation of the P- type regions may be achieved by heavily doping with Zn so that the excess Zn is located interstitially and acts as a donor.
GB2793565A 1964-07-31 1965-07-01 Semiconductor devices Expired GB1073460A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38655164A 1964-07-31 1964-07-31

Publications (1)

Publication Number Publication Date
GB1073460A true GB1073460A (en) 1967-06-28

Family

ID=23526074

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2793565A Expired GB1073460A (en) 1964-07-31 1965-07-01 Semiconductor devices

Country Status (3)

Country Link
DE (1) DE1489700A1 (en)
GB (1) GB1073460A (en)
NL (1) NL6509860A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2165694A (en) * 1984-10-16 1986-04-16 Sony Corp Semiconductor laser devices
EP0196200A2 (en) * 1985-03-23 1986-10-01 Sony Corporation Semiconductor laser devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2165694A (en) * 1984-10-16 1986-04-16 Sony Corp Semiconductor laser devices
FR2571901A1 (en) * 1984-10-16 1986-04-18 Sony Corp SEMICONDUCTOR LASER AND PROCESS FOR PRODUCING SUCH A LASER OR PHOTODETECTOR PARTS ARE FORMED ON THE SEMICONDUCTOR BRACKET
EP0196200A2 (en) * 1985-03-23 1986-10-01 Sony Corporation Semiconductor laser devices
EP0196200A3 (en) * 1985-03-23 1988-01-13 Sony Corporation Semiconductor laser devices

Also Published As

Publication number Publication date
DE1489700A1 (en) 1969-10-02
NL6509860A (en) 1966-02-01

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