JPS61154175A - 半導体記憶装置の製造方法 - Google Patents

半導体記憶装置の製造方法

Info

Publication number
JPS61154175A
JPS61154175A JP59278227A JP27822784A JPS61154175A JP S61154175 A JPS61154175 A JP S61154175A JP 59278227 A JP59278227 A JP 59278227A JP 27822784 A JP27822784 A JP 27822784A JP S61154175 A JPS61154175 A JP S61154175A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
film
phosphorus
oxide film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59278227A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0587993B2 (enExample
Inventor
Chikasumi Tozawa
戸沢　周純
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59278227A priority Critical patent/JPS61154175A/ja
Publication of JPS61154175A publication Critical patent/JPS61154175A/ja
Publication of JPH0587993B2 publication Critical patent/JPH0587993B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP59278227A 1984-12-27 1984-12-27 半導体記憶装置の製造方法 Granted JPS61154175A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59278227A JPS61154175A (ja) 1984-12-27 1984-12-27 半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59278227A JPS61154175A (ja) 1984-12-27 1984-12-27 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61154175A true JPS61154175A (ja) 1986-07-12
JPH0587993B2 JPH0587993B2 (enExample) 1993-12-20

Family

ID=17594386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59278227A Granted JPS61154175A (ja) 1984-12-27 1984-12-27 半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61154175A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453634A (en) * 1987-12-21 1995-09-26 Kabushiki Kaisha Toshiba Non-volatile semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453634A (en) * 1987-12-21 1995-09-26 Kabushiki Kaisha Toshiba Non-volatile semiconductor device

Also Published As

Publication number Publication date
JPH0587993B2 (enExample) 1993-12-20

Similar Documents

Publication Publication Date Title
EP0090963B1 (en) Method for making polycrystalline silicon film resistors
JPH0465548B2 (enExample)
US6468863B2 (en) Split gate field effect transistor (FET) device employing dielectric barrier layer and method for fabrication thereof
US4637128A (en) Method of producing semiconductor device
JPH09232448A (ja) 薄膜トランジスタ及びその製造方法
JPH03789B2 (enExample)
JPS6273774A (ja) 半導体記憶装置の製造方法
JPS61154175A (ja) 半導体記憶装置の製造方法
KR950012555B1 (ko) 메모리셀 캐패시터의 유전막 누설전류 개선방법
JP3140023B2 (ja) 半導体装置及びその製造方法
JPH03265143A (ja) 薄膜トランジスタの製造方法
JPH0231468A (ja) 浮遊ゲート型半導体記憶装置の製造方法
JPH1056142A (ja) 半導体記憶素子およびその形成方法
JPS61127177A (ja) 半導体装置及びその製造方法
JPH04286152A (ja) 半導体メモリの製造方法
JPH05251712A (ja) 不揮発性半導体記憶装置の製造方法
SU1085437A1 (ru) Способ изготовлени полевых транзисторов
JP4615682B2 (ja) Ｍｏｓ型トランジスタの製造方法
JPH0353785B2 (enExample)
JPS63131575A (ja) Ｍｏｓトランジスタおよびその製造方法
JPS5891670A (ja) 半導体装置の製造方法
JPH0587992B2 (enExample)
JPH02128430A (ja) Ｍｏｓトランジスタの製造方法
JPH02246374A (ja) 半導体記憶装置およびその製造方法
JPH0316181A (ja) フローティングゲート型半導体メモリ装置