JPS61151088A - 単結晶の製造方法 - Google Patents

単結晶の製造方法

Info

Publication number
JPS61151088A
JPS61151088A JP27231884A JP27231884A JPS61151088A JP S61151088 A JPS61151088 A JP S61151088A JP 27231884 A JP27231884 A JP 27231884A JP 27231884 A JP27231884 A JP 27231884A JP S61151088 A JPS61151088 A JP S61151088A
Authority
JP
Japan
Prior art keywords
single crystal
crucible
crystal
rotation speed
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27231884A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0544440B2 (enExample
Inventor
Shigeo Nonaka
野中　重夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP27231884A priority Critical patent/JPS61151088A/ja
Publication of JPS61151088A publication Critical patent/JPS61151088A/ja
Publication of JPH0544440B2 publication Critical patent/JPH0544440B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP27231884A 1984-12-24 1984-12-24 単結晶の製造方法 Granted JPS61151088A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27231884A JPS61151088A (ja) 1984-12-24 1984-12-24 単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27231884A JPS61151088A (ja) 1984-12-24 1984-12-24 単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS61151088A true JPS61151088A (ja) 1986-07-09
JPH0544440B2 JPH0544440B2 (enExample) 1993-07-06

Family

ID=17512208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27231884A Granted JPS61151088A (ja) 1984-12-24 1984-12-24 単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS61151088A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009025340A1 (ja) * 2007-08-21 2009-02-26 Sumco Corporation Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140795A (en) * 1979-04-19 1980-11-04 Nippon Telegr & Teleph Corp <Ntt> Automatic crystal growing device
JPS57135796A (en) * 1980-12-29 1982-08-21 Monsanto Co Method of adjusting oxygen concentration and distribution in silicon growing by czochralski method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140795A (en) * 1979-04-19 1980-11-04 Nippon Telegr & Teleph Corp <Ntt> Automatic crystal growing device
JPS57135796A (en) * 1980-12-29 1982-08-21 Monsanto Co Method of adjusting oxygen concentration and distribution in silicon growing by czochralski method

Also Published As

Publication number Publication date
JPH0544440B2 (enExample) 1993-07-06

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