JPH0544440B2 - - Google Patents

Info

Publication number
JPH0544440B2
JPH0544440B2 JP59272318A JP27231884A JPH0544440B2 JP H0544440 B2 JPH0544440 B2 JP H0544440B2 JP 59272318 A JP59272318 A JP 59272318A JP 27231884 A JP27231884 A JP 27231884A JP H0544440 B2 JPH0544440 B2 JP H0544440B2
Authority
JP
Japan
Prior art keywords
crystal
crucible
single crystal
rotation speed
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59272318A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61151088A (ja
Inventor
Shigeo Nonaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP27231884A priority Critical patent/JPS61151088A/ja
Publication of JPS61151088A publication Critical patent/JPS61151088A/ja
Publication of JPH0544440B2 publication Critical patent/JPH0544440B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP27231884A 1984-12-24 1984-12-24 単結晶の製造方法 Granted JPS61151088A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27231884A JPS61151088A (ja) 1984-12-24 1984-12-24 単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27231884A JPS61151088A (ja) 1984-12-24 1984-12-24 単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS61151088A JPS61151088A (ja) 1986-07-09
JPH0544440B2 true JPH0544440B2 (enExample) 1993-07-06

Family

ID=17512208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27231884A Granted JPS61151088A (ja) 1984-12-24 1984-12-24 単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS61151088A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009025340A1 (ja) * 2007-08-21 2009-02-26 Sumco Corporation Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140795A (en) * 1979-04-19 1980-11-04 Nippon Telegr & Teleph Corp <Ntt> Automatic crystal growing device
CA1191075A (en) * 1980-12-29 1985-07-30 Roger A. Frederick Method for regulating concentration and distribution of oxygen in czochralski grown silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009025340A1 (ja) * 2007-08-21 2009-02-26 Sumco Corporation Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JP5359874B2 (ja) * 2007-08-21 2013-12-04 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Also Published As

Publication number Publication date
JPS61151088A (ja) 1986-07-09

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