JPS6114668B2 - - Google Patents

Info

Publication number
JPS6114668B2
JPS6114668B2 JP168777A JP168777A JPS6114668B2 JP S6114668 B2 JPS6114668 B2 JP S6114668B2 JP 168777 A JP168777 A JP 168777A JP 168777 A JP168777 A JP 168777A JP S6114668 B2 JPS6114668 B2 JP S6114668B2
Authority
JP
Japan
Prior art keywords
hollow
insulator
hollow member
semiconductor
metal header
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP168777A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5386576A (en
Inventor
Naofumi Tsuzuki
Shinzo Anazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP168777A priority Critical patent/JPS5386576A/ja
Priority to US05/868,458 priority patent/US4172261A/en
Publication of JPS5386576A publication Critical patent/JPS5386576A/ja
Publication of JPS6114668B2 publication Critical patent/JPS6114668B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/134—Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/737—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a laterally-adjacent lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Bipolar Transistors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP168777A 1977-01-10 1977-01-10 Package for semiconductor element Granted JPS5386576A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP168777A JPS5386576A (en) 1977-01-10 1977-01-10 Package for semiconductor element
US05/868,458 US4172261A (en) 1977-01-10 1978-01-10 Semiconductor device having a highly air-tight package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP168777A JPS5386576A (en) 1977-01-10 1977-01-10 Package for semiconductor element

Publications (2)

Publication Number Publication Date
JPS5386576A JPS5386576A (en) 1978-07-31
JPS6114668B2 true JPS6114668B2 (enFirst) 1986-04-19

Family

ID=11508417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP168777A Granted JPS5386576A (en) 1977-01-10 1977-01-10 Package for semiconductor element

Country Status (2)

Country Link
US (1) US4172261A (enFirst)
JP (1) JPS5386576A (enFirst)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
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JPS55140251A (en) * 1979-04-12 1980-11-01 Fujitsu Ltd Semiconductor device
US4399707A (en) * 1981-02-04 1983-08-23 Honeywell, Inc. Stress sensitive semiconductor unit and housing means therefor
JPS58146827A (ja) * 1982-02-25 1983-09-01 Fuji Electric Co Ltd 半導体式圧力センサ
US4750031A (en) * 1982-06-25 1988-06-07 The United States Of America As Represented By The United States National Aeronautics And Space Administration Hermetically sealable package for hybrid solid-state electronic devices and the like
FR2539249B1 (fr) * 1983-01-07 1986-08-22 Europ Composants Electron Boitier a dissipation thermique elevee notamment pour microelectronique
US4550333A (en) * 1983-09-13 1985-10-29 Xerox Corporation Light emitting semiconductor mount
JPS6092829U (ja) * 1983-11-30 1985-06-25 アルプス電気株式会社 マイクロ波トランジスタの取付構造体
US4649416A (en) * 1984-01-03 1987-03-10 Raytheon Company Microwave transistor package
DE3406528A1 (de) * 1984-02-23 1985-08-29 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungshalbleitermodul
US4607276A (en) * 1984-03-08 1986-08-19 Olin Corporation Tape packages
FR2563050B1 (fr) * 1984-04-13 1987-01-16 Thomson Csf Combineur compact de dispositifs semiconducteurs, fonctionnant en hyperfrequences
JPS61218151A (ja) * 1985-03-23 1986-09-27 Hitachi Ltd 半導体装置
CN1005809B (zh) * 1985-04-01 1989-11-15 于志伟 可集成化的高频宽带超线性放大器及其制造方法
FR2584533A1 (fr) * 1985-07-05 1987-01-09 Acrian Inc Boitier de transistor a haute frequence
US4720690A (en) * 1986-07-14 1988-01-19 Harris Corporation Sculptured stripline interface conductor
US4820659A (en) * 1986-07-16 1989-04-11 General Electric Company Method of making a semiconductor device assembly
US4797728A (en) * 1986-07-16 1989-01-10 General Electric Company Semiconductor device assembly and method of making same
JPH065699B2 (ja) * 1987-09-16 1994-01-19 日本電気株式会社 半導体装置
US5023993A (en) * 1988-09-30 1991-06-18 Grumman Aerospace Corporation Method for manufacturing a high-performance package for monolithic microwave integrated circuits
US4901041A (en) * 1988-09-30 1990-02-13 Grumman Corporation High-performance package for monolithic microwave integrated circuits
EP0366082B1 (en) * 1988-10-28 1996-04-10 Sumitomo Electric Industries, Ltd. Member for carrying semiconductor device
US4899118A (en) * 1988-12-27 1990-02-06 Hughes Aircraft Company Low temperature cofired ceramic packages for microwave and millimeter wave gallium arsenide integrated circuits
US5223741A (en) * 1989-09-01 1993-06-29 Tactical Fabs, Inc. Package for an integrated circuit structure
KR940002444B1 (ko) * 1990-11-13 1994-03-24 금성일렉트론 주식회사 반도체 소자의 패키지 어셈블리 방법
US5126827A (en) * 1991-01-17 1992-06-30 Avantek, Inc. Semiconductor chip header having particular surface metallization
US5111277A (en) * 1991-03-29 1992-05-05 Aegis, Inc. Surface mount device with high thermal conductivity
US5188985A (en) * 1991-03-29 1993-02-23 Aegis, Inc. Surface mount device with high thermal conductivity
JPH05308107A (ja) * 1991-07-01 1993-11-19 Sumitomo Electric Ind Ltd 半導体装置及びその製作方法
JP2772184B2 (ja) * 1991-11-07 1998-07-02 株式会社東芝 半導体装置
US5406120A (en) * 1992-10-20 1995-04-11 Jones; Robert M. Hermetically sealed semiconductor ceramic package
JPH06196587A (ja) * 1992-12-24 1994-07-15 Toshiba Corp 半導体装置
US5777259A (en) * 1994-01-14 1998-07-07 Brush Wellman Inc. Heat exchanger assembly and method for making the same
US6022426A (en) * 1995-05-31 2000-02-08 Brush Wellman Inc. Multilayer laminate process
JP3357220B2 (ja) * 1995-07-07 2002-12-16 三菱電機株式会社 半導体装置
US5640045A (en) * 1996-02-06 1997-06-17 Directed Energy, Inc. Thermal stress minimization in power semiconductor devices
EP0794616B1 (en) * 1996-03-08 2003-01-29 Matsushita Electric Industrial Co., Ltd. An electronic part and a method of production thereof
US5760473A (en) * 1996-06-25 1998-06-02 Brush Wellman Inc. Semiconductor package having a eutectic bonding layer
US6056186A (en) * 1996-06-25 2000-05-02 Brush Wellman Inc. Method for bonding a ceramic to a metal with a copper-containing shim
US5942796A (en) * 1997-11-17 1999-08-24 Advanced Packaging Concepts, Inc. Package structure for high-power surface-mounted electronic devices
US6204448B1 (en) 1998-12-04 2001-03-20 Kyocera America, Inc. High frequency microwave packaging having a dielectric gap
JP3677403B2 (ja) * 1998-12-07 2005-08-03 パイオニア株式会社 発熱素子の放熱構造
DE10101086B4 (de) 2000-01-12 2007-11-08 International Rectifier Corp., El Segundo Leistungs-Moduleinheit
US7138712B2 (en) * 2002-01-31 2006-11-21 Micronas Gmbh Receptacle for a programmable, electronic processing device
US20040046247A1 (en) * 2002-09-09 2004-03-11 Olin Corporation, A Corporation Of The Commonwealth Of Virginia Hermetic semiconductor package
JP4568133B2 (ja) * 2004-03-30 2010-10-27 三洋電機株式会社 半導体レーザ装置および光装置
US7211887B2 (en) * 2004-11-30 2007-05-01 M/A-Com, Inc. connection arrangement for micro lead frame plastic packages
JP2006210410A (ja) * 2005-01-25 2006-08-10 Toshiba Corp 半導体装置
JP2006278913A (ja) * 2005-03-30 2006-10-12 Toyota Motor Corp 回路装置とその製造方法
US7355854B2 (en) * 2006-06-07 2008-04-08 Harris Corporation Apparatus for improved grounding of flange mount field effect transistors to printed wiring boards
KR101221807B1 (ko) * 2006-12-29 2013-01-14 페어차일드코리아반도체 주식회사 전력 소자 패키지
JP2009123736A (ja) * 2007-11-12 2009-06-04 Nec Corp デバイスの実装構造及びデバイスの実装方法
US8143717B2 (en) * 2008-06-16 2012-03-27 Hcc Aegis, Inc. Surface mount package with ceramic sidewalls
JP5201170B2 (ja) * 2010-05-20 2013-06-05 株式会社デンソー 電力変換装置
JP5626087B2 (ja) * 2011-04-13 2014-11-19 三菱電機株式会社 半導体装置
EP2733742B1 (en) 2012-11-15 2015-08-19 Nxp B.V. Amplifier circuit
JP6015508B2 (ja) * 2013-03-18 2016-10-26 富士通株式会社 高周波モジュール
JP6412900B2 (ja) * 2016-06-23 2018-10-24 株式会社東芝 高周波半導体用パッケージ
JP6627988B2 (ja) * 2016-11-17 2020-01-08 三菱電機株式会社 半導体パッケージ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936864A (en) * 1973-05-18 1976-02-03 Raytheon Company Microwave transistor package
US3946428A (en) * 1973-09-19 1976-03-23 Nippon Electric Company, Limited Encapsulation package for a semiconductor element
US4042952A (en) * 1976-06-09 1977-08-16 Motorola, Inc. R. F. power transistor device with controlled common lead inductance

Also Published As

Publication number Publication date
US4172261A (en) 1979-10-23
JPS5386576A (en) 1978-07-31

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