JPS6113381B2 - - Google Patents

Info

Publication number
JPS6113381B2
JPS6113381B2 JP50145473A JP14547375A JPS6113381B2 JP S6113381 B2 JPS6113381 B2 JP S6113381B2 JP 50145473 A JP50145473 A JP 50145473A JP 14547375 A JP14547375 A JP 14547375A JP S6113381 B2 JPS6113381 B2 JP S6113381B2
Authority
JP
Japan
Prior art keywords
silicon
electrode
semiconductor
monitoring
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50145473A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5268376A (en
Inventor
Kunio Aomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP50145473A priority Critical patent/JPS5268376A/ja
Publication of JPS5268376A publication Critical patent/JPS5268376A/ja
Priority to US05/943,913 priority patent/US4197632A/en
Priority to US06/073,250 priority patent/US4283733A/en
Publication of JPS6113381B2 publication Critical patent/JPS6113381B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10P74/277—
    • H10P95/90—
    • H10W46/00—
    • H10W46/501—

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
JP50145473A 1975-12-05 1975-12-05 Semiconductor device Granted JPS5268376A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50145473A JPS5268376A (en) 1975-12-05 1975-12-05 Semiconductor device
US05/943,913 US4197632A (en) 1975-12-05 1978-09-20 Semiconductor device
US06/073,250 US4283733A (en) 1975-12-05 1979-09-07 Semiconductor integrated circuit device including element for monitoring characteristics of the device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50145473A JPS5268376A (en) 1975-12-05 1975-12-05 Semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP59094202A Division JPS605536A (ja) 1984-05-11 1984-05-11 半導体装置
JP59094203A Division JPS605537A (ja) 1984-05-11 1984-05-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5268376A JPS5268376A (en) 1977-06-07
JPS6113381B2 true JPS6113381B2 (enExample) 1986-04-12

Family

ID=15386050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50145473A Granted JPS5268376A (en) 1975-12-05 1975-12-05 Semiconductor device

Country Status (2)

Country Link
US (1) US4283733A (enExample)
JP (1) JPS5268376A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057952A (ja) * 1983-09-09 1985-04-03 Toshiba Corp 半導体装置の製造方法
JPS60177640A (ja) * 1984-02-24 1985-09-11 Hitachi Ltd 半導体集積回路装置
JPS6341041A (ja) * 1986-08-06 1988-02-22 Mitsubishi Electric Corp 半導体装置
JPH01100935A (ja) * 1987-10-14 1989-04-19 Toshiba Corp 半導体装置
US5008208A (en) * 1988-12-07 1991-04-16 Honeywell Inc. Method of making planarized, self-aligned bipolar integrated circuits
US5111267A (en) * 1989-09-29 1992-05-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a multilayer electrode structure and method for fabricating the same
US5229313A (en) * 1989-09-29 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor device having multilayer structure
JP2721607B2 (ja) * 1991-11-25 1998-03-04 三菱電機株式会社 半導体装置及びその製造方法
US5670828A (en) * 1995-02-21 1997-09-23 Advanced Micro Devices, Inc. Tunneling technology for reducing intra-conductive layer capacitance
TW350089B (en) * 1996-11-11 1999-01-11 Nippon Electric Co A semiconductor and the manufacturing method
US20060259926A1 (en) 2000-07-20 2006-11-16 Digital Deck, Inc. Adaptable programming guide for networked devices
US7271489B2 (en) * 2003-10-15 2007-09-18 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US6605825B1 (en) * 2002-02-14 2003-08-12 Innovative Technology Licensing, Llc Bipolar transistor characterization apparatus with lateral test probe pads
DE10326087B4 (de) * 2003-06-10 2008-03-20 Infineon Technologies Ag Bauelement mit einer Nutzstruktur und einer Hilfsstruktur

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335340A (en) * 1964-02-24 1967-08-08 Ibm Combined transistor and testing structures and fabrication thereof
US3388457A (en) * 1966-05-31 1968-06-18 Ibm Interface resistance monitor
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3514845A (en) * 1968-08-16 1970-06-02 Raytheon Co Method of making integrated circuits with complementary elements
DE1927876C3 (de) * 1969-05-31 1979-09-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
US3632436A (en) * 1969-07-11 1972-01-04 Rca Corp Contact system for semiconductor devices
US3699646A (en) * 1970-12-28 1972-10-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure
FR2204889B1 (enExample) * 1972-10-27 1975-03-28 Sescosem
GB1399163A (en) * 1972-11-08 1975-06-25 Ferranti Ltd Methods of manufacturing semiconductor devices
US3847687A (en) * 1972-11-15 1974-11-12 Motorola Inc Methods of forming self aligned transistor structure having polycrystalline contacts
US3902188A (en) * 1973-08-15 1975-08-26 Rca Corp High frequency transistor
DE2429957B2 (de) * 1974-06-21 1980-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines bestimmten Leitungstyps in einem Halbleiterkörper

Also Published As

Publication number Publication date
JPS5268376A (en) 1977-06-07
US4283733A (en) 1981-08-11

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