JPS61129868A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61129868A
JPS61129868A JP59252326A JP25232684A JPS61129868A JP S61129868 A JPS61129868 A JP S61129868A JP 59252326 A JP59252326 A JP 59252326A JP 25232684 A JP25232684 A JP 25232684A JP S61129868 A JPS61129868 A JP S61129868A
Authority
JP
Japan
Prior art keywords
region
junction
field plate
depletion layer
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59252326A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0344412B2 (forum.php
Inventor
Koji Shirai
浩司 白井
Ken Kawamura
建 河村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59252326A priority Critical patent/JPS61129868A/ja
Priority to KR1019850008747A priority patent/KR890004495B1/ko
Priority to US06/802,372 priority patent/US4707720A/en
Priority to EP85115145A priority patent/EP0190423B1/en
Priority to DE8585115145T priority patent/DE3585225D1/de
Publication of JPS61129868A publication Critical patent/JPS61129868A/ja
Publication of JPH0344412B2 publication Critical patent/JPH0344412B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Bipolar Transistors (AREA)
JP59252326A 1984-11-29 1984-11-29 半導体装置 Granted JPS61129868A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59252326A JPS61129868A (ja) 1984-11-29 1984-11-29 半導体装置
KR1019850008747A KR890004495B1 (ko) 1984-11-29 1985-11-22 반도체 장치
US06/802,372 US4707720A (en) 1984-11-29 1985-11-27 Semiconductor memory device
EP85115145A EP0190423B1 (en) 1984-11-29 1985-11-29 Planar semiconductor device having a field plate electrode
DE8585115145T DE3585225D1 (de) 1984-11-29 1985-11-29 Planare halbleitervorrichtung mit einer feldplatte.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59252326A JPS61129868A (ja) 1984-11-29 1984-11-29 半導体装置

Publications (2)

Publication Number Publication Date
JPS61129868A true JPS61129868A (ja) 1986-06-17
JPH0344412B2 JPH0344412B2 (forum.php) 1991-07-05

Family

ID=17235704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59252326A Granted JPS61129868A (ja) 1984-11-29 1984-11-29 半導体装置

Country Status (1)

Country Link
JP (1) JPS61129868A (forum.php)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02170469A (ja) * 1988-12-22 1990-07-02 Fuji Electric Co Ltd 半導体装置
US5475258A (en) * 1992-10-30 1995-12-12 Nippondenso Co., Ltd. Power semiconductor device with protective element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999766A (ja) * 1982-11-29 1984-06-08 Nec Corp 半導体集積回路装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999766A (ja) * 1982-11-29 1984-06-08 Nec Corp 半導体集積回路装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02170469A (ja) * 1988-12-22 1990-07-02 Fuji Electric Co Ltd 半導体装置
US5475258A (en) * 1992-10-30 1995-12-12 Nippondenso Co., Ltd. Power semiconductor device with protective element

Also Published As

Publication number Publication date
JPH0344412B2 (forum.php) 1991-07-05

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