JPS61123099A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS61123099A
JPS61123099A JP59243340A JP24334084A JPS61123099A JP S61123099 A JPS61123099 A JP S61123099A JP 59243340 A JP59243340 A JP 59243340A JP 24334084 A JP24334084 A JP 24334084A JP S61123099 A JPS61123099 A JP S61123099A
Authority
JP
Japan
Prior art keywords
address
amplitude
defective
memory cell
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59243340A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0334158B2 (OSRAM
Inventor
Yoshinori Okajima
義憲 岡島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59243340A priority Critical patent/JPS61123099A/ja
Priority to US06/788,567 priority patent/US4744060A/en
Priority to EP85307560A priority patent/EP0178948B1/en
Priority to DE8585307560T priority patent/DE3585015D1/de
Priority to KR1019850007703A priority patent/KR900008659B1/ko
Publication of JPS61123099A publication Critical patent/JPS61123099A/ja
Publication of JPH0334158B2 publication Critical patent/JPH0334158B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP59243340A 1984-10-19 1984-11-20 半導体記憶装置 Granted JPS61123099A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59243340A JPS61123099A (ja) 1984-11-20 1984-11-20 半導体記憶装置
US06/788,567 US4744060A (en) 1984-10-19 1985-10-17 Bipolar-transistor type random access memory having redundancy configuration
EP85307560A EP0178948B1 (en) 1984-10-19 1985-10-18 Bipolar-transistor random access memory having a redundancy configuration
DE8585307560T DE3585015D1 (de) 1984-10-19 1985-10-18 Bipolarer transistor-direktzugriffsspeicher mit redundanzkonfiguration.
KR1019850007703A KR900008659B1 (ko) 1984-10-19 1985-10-18 용장성 구조를 갖춘 바이폴러 트랜지스터형 랜덤 액세스 메모리

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59243340A JPS61123099A (ja) 1984-11-20 1984-11-20 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS61123099A true JPS61123099A (ja) 1986-06-10
JPH0334158B2 JPH0334158B2 (OSRAM) 1991-05-21

Family

ID=17102366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59243340A Granted JPS61123099A (ja) 1984-10-19 1984-11-20 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS61123099A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337900A (ja) * 1986-07-31 1988-02-18 Mitsubishi Electric Corp 半導体記憶装置
EP0639798A1 (en) * 1993-08-19 1995-02-22 Mitsubishi Paper Mills, Ltd. Treating solution for lithographic printing plate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337900A (ja) * 1986-07-31 1988-02-18 Mitsubishi Electric Corp 半導体記憶装置
EP0639798A1 (en) * 1993-08-19 1995-02-22 Mitsubishi Paper Mills, Ltd. Treating solution for lithographic printing plate

Also Published As

Publication number Publication date
JPH0334158B2 (OSRAM) 1991-05-21

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