JPS61123000A - 読出し専用半導体記憶装置 - Google Patents

読出し専用半導体記憶装置

Info

Publication number
JPS61123000A
JPS61123000A JP59245586A JP24558684A JPS61123000A JP S61123000 A JPS61123000 A JP S61123000A JP 59245586 A JP59245586 A JP 59245586A JP 24558684 A JP24558684 A JP 24558684A JP S61123000 A JPS61123000 A JP S61123000A
Authority
JP
Japan
Prior art keywords
memory cell
potential
word line
sense amplifier
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59245586A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0313675B2 (enExample
Inventor
Shoji Kitazawa
北沢 章司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP59245586A priority Critical patent/JPS61123000A/ja
Priority to US06/798,681 priority patent/US4709352A/en
Priority to KR1019850008614A priority patent/KR900008185B1/ko
Priority to DE8585308426T priority patent/DE3584612D1/de
Priority to EP85308426A priority patent/EP0183476B1/en
Publication of JPS61123000A publication Critical patent/JPS61123000A/ja
Publication of JPH0313675B2 publication Critical patent/JPH0313675B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP59245586A 1984-11-09 1984-11-19 読出し専用半導体記憶装置 Granted JPS61123000A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59245586A JPS61123000A (ja) 1984-11-19 1984-11-19 読出し専用半導体記憶装置
US06/798,681 US4709352A (en) 1984-11-19 1985-11-15 MOS read-only memory systems
KR1019850008614A KR900008185B1 (ko) 1984-11-09 1985-11-18 판독전용 반도체 기억장치
DE8585308426T DE3584612D1 (de) 1984-11-19 1985-11-19 Mos-festwertspeicher.
EP85308426A EP0183476B1 (en) 1984-11-19 1985-11-19 Mos read-only memory systems

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59245586A JPS61123000A (ja) 1984-11-19 1984-11-19 読出し専用半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS61123000A true JPS61123000A (ja) 1986-06-10
JPH0313675B2 JPH0313675B2 (enExample) 1991-02-25

Family

ID=17135930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59245586A Granted JPS61123000A (ja) 1984-11-09 1984-11-19 読出し専用半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS61123000A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01144431A (ja) * 1987-12-01 1989-06-06 Kao Corp 多孔性フィルム及びその製造方法
JP2015204128A (ja) * 2014-04-10 2015-11-16 インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag メモリ・タイミング回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01144431A (ja) * 1987-12-01 1989-06-06 Kao Corp 多孔性フィルム及びその製造方法
JP2015204128A (ja) * 2014-04-10 2015-11-16 インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag メモリ・タイミング回路

Also Published As

Publication number Publication date
JPH0313675B2 (enExample) 1991-02-25

Similar Documents

Publication Publication Date Title
US6421293B1 (en) One-time programmable memory cell in CMOS technology
TWI485705B (zh) 具備列式讀取及/或寫入輔助電路之記憶體電路
US20090201713A1 (en) Unit cell of nonvolatile memory device and nonvolatile memory device having the same
US6319800B1 (en) Static memory cell
US4980860A (en) Cross-coupled complementary bit lines for a semiconductor memory with pull-up circuitry
KR20110106881A (ko) 안티퓨즈 프로그램 가능한 메모리 어레이
JP4717173B2 (ja) メモリ装置および方法
US6950341B2 (en) Semiconductor memory device having plural sense amplifiers
JPS61218223A (ja) 制限された検出電流を用いるプログラム可能な論理装置
JPS6173300A (ja) 半導体記憶装置
KR900008185B1 (ko) 판독전용 반도체 기억장치
JPS62282466A (ja) 電気的可変不揮発メモリ装置
JPS58130492A (ja) センス増幅器
US4067001A (en) Line for transporting charges from storage elements in a storage field
KR850001615A (ko) 집적 메모리회로
JPH02285598A (ja) 半導体記憶装置
KR100299993B1 (ko) 게이트 어레이 장치용 정적 랜덤 액세스 메모리
JPS5873097A (ja) デコ−ダ−回路
JPS61123000A (ja) 読出し専用半導体記憶装置
KR930008413B1 (ko) 반도체기억장치
JPS59121694A (ja) 電力散逸を減少させたmosランダムアクセスメモリ用の交差結合型トランジスタメモリセル
JP2780621B2 (ja) 半導体記憶装置
EP0149403A2 (en) Sense amplifier for static MOS memory
US7170799B2 (en) SRAM and dual single ended bit sense for an SRAM
JP2987187B2 (ja) 半導体集積回路

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term