JPS6112072A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS6112072A JPS6112072A JP13106984A JP13106984A JPS6112072A JP S6112072 A JPS6112072 A JP S6112072A JP 13106984 A JP13106984 A JP 13106984A JP 13106984 A JP13106984 A JP 13106984A JP S6112072 A JPS6112072 A JP S6112072A
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrode
- semiconductor device
- potential
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000012535 impurity Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 238000007667 floating Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 description 19
- 230000005684 electric field Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13106984A JPS6112072A (ja) | 1984-06-27 | 1984-06-27 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13106984A JPS6112072A (ja) | 1984-06-27 | 1984-06-27 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6112072A true JPS6112072A (ja) | 1986-01-20 |
| JPH0217940B2 JPH0217940B2 (it) | 1990-04-24 |
Family
ID=15049270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13106984A Granted JPS6112072A (ja) | 1984-06-27 | 1984-06-27 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6112072A (it) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62153579U (it) * | 1986-03-20 | 1987-09-29 | ||
| JPH03124065A (ja) * | 1989-10-06 | 1991-05-27 | Toshiba Corp | 集積回路素子 |
| US5135038A (en) * | 1990-07-20 | 1992-08-04 | The Goodyear Tire & Rubber Company | Tire treads |
| JPH04216674A (ja) * | 1990-02-28 | 1992-08-06 | American Teleph & Telegr Co <Att> | 横形ｍｏｓ制御形サイリスタ |
| JP2003100374A (ja) * | 2001-09-26 | 2003-04-04 | Yokowo Co Ltd | スプリングコネクタ |
| US7205581B2 (en) | 2001-03-09 | 2007-04-17 | Infineon Technologies Ag | Thyristor structure and overvoltage protection configuration having the thyristor structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5061188A (it) * | 1973-09-24 | 1975-05-26 | ||
| JPS5093379A (it) * | 1973-12-19 | 1975-07-25 | ||
| JPS56155570A (en) * | 1980-05-02 | 1981-12-01 | Fujitsu Ltd | Semiconductor device |
| JPS5832459A (ja) * | 1981-08-20 | 1983-02-25 | Nec Corp | 半導体装置 |
| JPS58125871A (ja) * | 1981-12-16 | 1983-07-27 | ゼネラル・エレクトリツク・カンパニイ | 多セル形サイリスタ |
-
1984
- 1984-06-27 JP JP13106984A patent/JPS6112072A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5061188A (it) * | 1973-09-24 | 1975-05-26 | ||
| JPS5093379A (it) * | 1973-12-19 | 1975-07-25 | ||
| JPS56155570A (en) * | 1980-05-02 | 1981-12-01 | Fujitsu Ltd | Semiconductor device |
| JPS5832459A (ja) * | 1981-08-20 | 1983-02-25 | Nec Corp | 半導体装置 |
| JPS58125871A (ja) * | 1981-12-16 | 1983-07-27 | ゼネラル・エレクトリツク・カンパニイ | 多セル形サイリスタ |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62153579U (it) * | 1986-03-20 | 1987-09-29 | ||
| JPH03124065A (ja) * | 1989-10-06 | 1991-05-27 | Toshiba Corp | 集積回路素子 |
| JPH04216674A (ja) * | 1990-02-28 | 1992-08-06 | American Teleph & Telegr Co <Att> | 横形ｍｏｓ制御形サイリスタ |
| US5135038A (en) * | 1990-07-20 | 1992-08-04 | The Goodyear Tire & Rubber Company | Tire treads |
| US7205581B2 (en) | 2001-03-09 | 2007-04-17 | Infineon Technologies Ag | Thyristor structure and overvoltage protection configuration having the thyristor structure |
| JP2003100374A (ja) * | 2001-09-26 | 2003-04-04 | Yokowo Co Ltd | スプリングコネクタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0217940B2 (it) | 1990-04-24 |
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