JPS6112034A - シリコン基材表面に酸化珪素被膜を形成させる方法 - Google Patents

シリコン基材表面に酸化珪素被膜を形成させる方法

Info

Publication number
JPS6112034A
JPS6112034A JP59132700A JP13270084A JPS6112034A JP S6112034 A JPS6112034 A JP S6112034A JP 59132700 A JP59132700 A JP 59132700A JP 13270084 A JP13270084 A JP 13270084A JP S6112034 A JPS6112034 A JP S6112034A
Authority
JP
Japan
Prior art keywords
silicon oxide
silicon
film
aqueous solution
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59132700A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0127574B2 (OSRAM
Inventor
Hideo Kawahara
秀夫 河原
Hirotsugu Nagayama
永山　裕嗣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Sheet Glass Co Ltd
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Priority to JP59132700A priority Critical patent/JPS6112034A/ja
Publication of JPS6112034A publication Critical patent/JPS6112034A/ja
Publication of JPH0127574B2 publication Critical patent/JPH0127574B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—

Landscapes

  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
JP59132700A 1984-06-27 1984-06-27 シリコン基材表面に酸化珪素被膜を形成させる方法 Granted JPS6112034A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59132700A JPS6112034A (ja) 1984-06-27 1984-06-27 シリコン基材表面に酸化珪素被膜を形成させる方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59132700A JPS6112034A (ja) 1984-06-27 1984-06-27 シリコン基材表面に酸化珪素被膜を形成させる方法

Publications (2)

Publication Number Publication Date
JPS6112034A true JPS6112034A (ja) 1986-01-20
JPH0127574B2 JPH0127574B2 (OSRAM) 1989-05-30

Family

ID=15087506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59132700A Granted JPS6112034A (ja) 1984-06-27 1984-06-27 シリコン基材表面に酸化珪素被膜を形成させる方法

Country Status (1)

Country Link
JP (1) JPS6112034A (OSRAM)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0465169A (ja) * 1990-07-05 1992-03-02 Toshiba Corp Ｅ↑２ｐｒｏｍ装置
JPH05259154A (ja) * 1992-03-04 1993-10-08 Nec Corp 半導体装置の製造方法
US5278104A (en) * 1989-07-25 1994-01-11 Kabushiki Kaisha Toshiba Semiconductor wafer carrier having a dust cover
US5468682A (en) * 1993-12-21 1995-11-21 Nec Corporation Method of manufacturing semiconductor device using the abrasive
JP2007191380A (ja) * 2005-12-21 2007-08-02 National Institute Of Advanced Industrial & Technology レーザ加工用シリカガラス
CN113321216A (zh) * 2021-06-22 2021-08-31 中国地质科学院郑州矿产综合利用研究所 一种利用石英脉型钨废石制备高纯石英的方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5278104A (en) * 1989-07-25 1994-01-11 Kabushiki Kaisha Toshiba Semiconductor wafer carrier having a dust cover
JPH0465169A (ja) * 1990-07-05 1992-03-02 Toshiba Corp Ｅ↑２ｐｒｏｍ装置
JPH05259154A (ja) * 1992-03-04 1993-10-08 Nec Corp 半導体装置の製造方法
US5468682A (en) * 1993-12-21 1995-11-21 Nec Corporation Method of manufacturing semiconductor device using the abrasive
JP2007191380A (ja) * 2005-12-21 2007-08-02 National Institute Of Advanced Industrial & Technology レーザ加工用シリカガラス
CN113321216A (zh) * 2021-06-22 2021-08-31 中国地质科学院郑州矿产综合利用研究所 一种利用石英脉型钨废石制备高纯石英的方法
CN113321216B (zh) * 2021-06-22 2023-09-22 中国地质科学院郑州矿产综合利用研究所 一种利用石英脉型钨废石制备高纯石英的方法

Also Published As

Publication number Publication date
JPH0127574B2 (OSRAM) 1989-05-30

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