JPS61119367U - - Google Patents

Info

Publication number
JPS61119367U
JPS61119367U JP1985001530U JP153085U JPS61119367U JP S61119367 U JPS61119367 U JP S61119367U JP 1985001530 U JP1985001530 U JP 1985001530U JP 153085 U JP153085 U JP 153085U JP S61119367 U JPS61119367 U JP S61119367U
Authority
JP
Japan
Prior art keywords
semiconductor substrate
insulating layer
bonding pads
gaas
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1985001530U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985001530U priority Critical patent/JPS61119367U/ja
Priority to KR2019850013898U priority patent/KR910004592Y1/ko
Publication of JPS61119367U publication Critical patent/JPS61119367U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP1985001530U 1985-01-10 1985-01-10 Pending JPS61119367U (US06272168-20010807-M00014.png)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1985001530U JPS61119367U (US06272168-20010807-M00014.png) 1985-01-10 1985-01-10
KR2019850013898U KR910004592Y1 (ko) 1985-01-10 1985-10-23 다이오우드

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985001530U JPS61119367U (US06272168-20010807-M00014.png) 1985-01-10 1985-01-10

Publications (1)

Publication Number Publication Date
JPS61119367U true JPS61119367U (US06272168-20010807-M00014.png) 1986-07-28

Family

ID=30474363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985001530U Pending JPS61119367U (US06272168-20010807-M00014.png) 1985-01-10 1985-01-10

Country Status (2)

Country Link
JP (1) JPS61119367U (US06272168-20010807-M00014.png)
KR (1) KR910004592Y1 (US06272168-20010807-M00014.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013058232A1 (ja) * 2011-10-17 2013-04-25 ローム株式会社 チップダイオードおよびダイオードパッケージ

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013058232A1 (ja) * 2011-10-17 2013-04-25 ローム株式会社 チップダイオードおよびダイオードパッケージ
JP2014029975A (ja) * 2011-10-17 2014-02-13 Rohm Co Ltd チップダイオードおよびダイオードパッケージ
US9054072B2 (en) 2011-10-17 2015-06-09 Rohm Co., Ltd. Chip diode and diode package
US9385093B2 (en) 2011-10-17 2016-07-05 Rohm Co., Ltd. Chip diode and diode package
US9659875B2 (en) 2011-10-17 2017-05-23 Rohm Co., Ltd. Chip part and method of making the same
US9773925B2 (en) 2011-10-17 2017-09-26 Rohm Co., Ltd. Chip part and method of making the same
US10164125B2 (en) 2011-10-17 2018-12-25 Rohm Co., Ltd. Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit
US10593814B2 (en) 2011-10-17 2020-03-17 Rohm Co., Ltd. Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit

Also Published As

Publication number Publication date
KR910004592Y1 (ko) 1991-06-29
KR860010108U (ko) 1986-08-16

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