JPS61119367U - - Google Patents
Info
- Publication number
- JPS61119367U JPS61119367U JP1985001530U JP153085U JPS61119367U JP S61119367 U JPS61119367 U JP S61119367U JP 1985001530 U JP1985001530 U JP 1985001530U JP 153085 U JP153085 U JP 153085U JP S61119367 U JPS61119367 U JP S61119367U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- insulating layer
- bonding pads
- gaas
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 238000006664 bond formation reaction Methods 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985001530U JPS61119367U (US06272168-20010807-M00014.png) | 1985-01-10 | 1985-01-10 | |
KR2019850013898U KR910004592Y1 (ko) | 1985-01-10 | 1985-10-23 | 다이오우드 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985001530U JPS61119367U (US06272168-20010807-M00014.png) | 1985-01-10 | 1985-01-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61119367U true JPS61119367U (US06272168-20010807-M00014.png) | 1986-07-28 |
Family
ID=30474363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985001530U Pending JPS61119367U (US06272168-20010807-M00014.png) | 1985-01-10 | 1985-01-10 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS61119367U (US06272168-20010807-M00014.png) |
KR (1) | KR910004592Y1 (US06272168-20010807-M00014.png) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013058232A1 (ja) * | 2011-10-17 | 2013-04-25 | ローム株式会社 | チップダイオードおよびダイオードパッケージ |
-
1985
- 1985-01-10 JP JP1985001530U patent/JPS61119367U/ja active Pending
- 1985-10-23 KR KR2019850013898U patent/KR910004592Y1/ko not_active IP Right Cessation
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013058232A1 (ja) * | 2011-10-17 | 2013-04-25 | ローム株式会社 | チップダイオードおよびダイオードパッケージ |
JP2014029975A (ja) * | 2011-10-17 | 2014-02-13 | Rohm Co Ltd | チップダイオードおよびダイオードパッケージ |
US9054072B2 (en) | 2011-10-17 | 2015-06-09 | Rohm Co., Ltd. | Chip diode and diode package |
US9385093B2 (en) | 2011-10-17 | 2016-07-05 | Rohm Co., Ltd. | Chip diode and diode package |
US9659875B2 (en) | 2011-10-17 | 2017-05-23 | Rohm Co., Ltd. | Chip part and method of making the same |
US9773925B2 (en) | 2011-10-17 | 2017-09-26 | Rohm Co., Ltd. | Chip part and method of making the same |
US10164125B2 (en) | 2011-10-17 | 2018-12-25 | Rohm Co., Ltd. | Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit |
US10593814B2 (en) | 2011-10-17 | 2020-03-17 | Rohm Co., Ltd. | Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit |
Also Published As
Publication number | Publication date |
---|---|
KR910004592Y1 (ko) | 1991-06-29 |
KR860010108U (ko) | 1986-08-16 |