JPS61119367U - - Google Patents

Info

Publication number
JPS61119367U
JPS61119367U JP1985001530U JP153085U JPS61119367U JP S61119367 U JPS61119367 U JP S61119367U JP 1985001530 U JP1985001530 U JP 1985001530U JP 153085 U JP153085 U JP 153085U JP S61119367 U JPS61119367 U JP S61119367U
Authority
JP
Japan
Prior art keywords
semiconductor substrate
insulating layer
bonding pads
gaas
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1985001530U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985001530U priority Critical patent/JPS61119367U/ja
Priority to KR2019850013898U priority patent/KR910004592Y1/en
Publication of JPS61119367U publication Critical patent/JPS61119367U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の第１実施例によるＧａＡｓシ
ヨツトキーダイオードを示す平面図、第２図及び
第３図は第１図に示すＧａＡｓシヨツトキーダイ
オードの製造に用いるフオトマスクを示す平面図
、第４図は本考案の第２実施例によるＧａＡｓシ
ヨツトキーダイオードを示す平面図、第５図及び
第６図は第４図に示すＧａＡｓシヨツトキーダイ
オードの製造に用いるフオトマスクを示す平面図
、第７図は本考案の第３実施例によるＧａＡｓシ
ヨツトキーダイオードを示す平面図、第８図及び
第９図は第７図に示すＧａＡｓシヨツトキーダイ
オードの製造を用いるフオトマスクを示す平面図
、第１０図は本考案の変形例による表面二電極型
シヨツトキーダイオードを示す平面図、第１１図
〜第１４図は第１０図に示す表面二電極型シヨツ
トキーダイオードの製造に用いるフオトマスクを
示す平面図、第１５図は従来のｐｎ接合ダイオー
ドを示す断面図、第１６図は従来のシヨツトキー
ダイオードを示す断面図、第１７図は従来の表面
二電極型シヨツトキーダイオードを示す断面図で
ある。 なお図面に用いた符号において、４，５……オ
ーミツク電極、６……ｐｎ接合、７……シヨツト
キー電極、８……シヨツトキー接合、９……Ｇａ
Ａｓチツプ、１０，１５……ボンデイング・パツ
ド、１１〜１４……フオトマスクである。 FIG. 1 is a plan view showing a GaAs shot key diode according to a first embodiment of the present invention, FIGS. 2 and 3 are plan views showing a photomask used for manufacturing the GaAs shot key diode shown in FIG. 4 is a plan view showing a GaAs shot key diode according to a second embodiment of the present invention; FIGS. 5 and 6 are plan views showing a photomask used for manufacturing the GaAs shot key diode shown in FIG. 4; FIG. 7 is a plan view showing a GaAs shot key diode according to a third embodiment of the present invention; FIGS. 8 and 9 are plan views showing a photomask using the fabrication of the GaAs shot key diode shown in FIG. 7; FIG. 10 is a plan view showing a surface two-electrode type Schottky diode according to a modified example of the present invention, and FIGS. 11 to 14 show photomasks used for manufacturing the surface two-electrode type Schottky diode shown in FIG. FIG. 15 is a cross-sectional view of a conventional pn junction diode, FIG. 16 is a cross-sectional view of a conventional Schottky diode, and FIG. 17 is a cross-sectional diagram of a conventional two-electrode Schottky diode. It is a diagram. In addition, in the symbols used in the drawings, 4, 5...Ohmic electrode, 6...PN junction, 7...Shotkey electrode, 8...Shotkey junction, 9...Ga
As chips, 10, 15... bonding pads, 11-14... photo masks.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体基板と、この半導体基板上に設けられて
いる絶縁層と、上記半導体基板の複数の接合形成
領域に対応して上記絶縁層に設けられかつ互いに
大きさの異なる複数の開口と、上記絶縁層上に設
けられているボンデイング・パツドとをそれぞれ
具備し、上記ボンデイング・パツドと上記半導体
基板の上記複数の接合形成領域のうちのいずれか
一つの接合形成領域とを必要に応じて接続するこ
とにより、接合面積を所要の大きさとし得るよう
に構成したことを特徴とするダイオード。 a semiconductor substrate, an insulating layer provided on the semiconductor substrate, a plurality of openings provided in the insulating layer corresponding to the plurality of bond formation regions of the semiconductor substrate and having different sizes, and the insulating layer. bonding pads provided on the semiconductor substrate, and connecting the bonding pads to any one of the plurality of bond forming regions of the semiconductor substrate as necessary. , a diode characterized in that it is configured such that the junction area can be set to a required size.
JP1985001530U 1985-01-10 1985-01-10 Pending JPS61119367U (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1985001530U JPS61119367U (en) 1985-01-10 1985-01-10
KR2019850013898U KR910004592Y1 (en) 1985-01-10 1985-10-23 Diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985001530U JPS61119367U (en) 1985-01-10 1985-01-10

Publications (1)

Publication Number Publication Date
JPS61119367U true JPS61119367U (en) 1986-07-28

Family

ID=30474363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985001530U Pending JPS61119367U (en) 1985-01-10 1985-01-10

Country Status (2)

Country Link
JP (1) JPS61119367U (en)
KR (1) KR910004592Y1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013058232A1 (en) * 2011-10-17 2013-04-25 ローム株式会社 Chip diode and diode package

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013058232A1 (en) * 2011-10-17 2013-04-25 ローム株式会社 Chip diode and diode package
JP2014029975A (en) * 2011-10-17 2014-02-13 Rohm Co Ltd Chip diode and diode package
US9054072B2 (en) 2011-10-17 2015-06-09 Rohm Co., Ltd. Chip diode and diode package
US9385093B2 (en) 2011-10-17 2016-07-05 Rohm Co., Ltd. Chip diode and diode package
US9659875B2 (en) 2011-10-17 2017-05-23 Rohm Co., Ltd. Chip part and method of making the same
US9773925B2 (en) 2011-10-17 2017-09-26 Rohm Co., Ltd. Chip part and method of making the same
US10164125B2 (en) 2011-10-17 2018-12-25 Rohm Co., Ltd. Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit
US10593814B2 (en) 2011-10-17 2020-03-17 Rohm Co., Ltd. Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit

Also Published As

Publication number Publication date
KR910004592Y1 (en) 1991-06-29
KR860010108U (en) 1986-08-16

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