JPS61113270A - モノリシックトランジスタ論理回路 - Google Patents

モノリシックトランジスタ論理回路

Info

Publication number
JPS61113270A
JPS61113270A JP60201972A JP20197285A JPS61113270A JP S61113270 A JPS61113270 A JP S61113270A JP 60201972 A JP60201972 A JP 60201972A JP 20197285 A JP20197285 A JP 20197285A JP S61113270 A JPS61113270 A JP S61113270A
Authority
JP
Japan
Prior art keywords
base
logic circuit
type
region
base layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60201972A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582986B2 (enExample
Inventor
アシヨク　ケイ．カプール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of JPS61113270A publication Critical patent/JPS61113270A/ja
Publication of JPH0582986B2 publication Critical patent/JPH0582986B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/084—Diode-transistor logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP60201972A 1984-09-14 1985-09-13 モノリシックトランジスタ論理回路 Granted JPS61113270A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/650,660 US4947230A (en) 1984-09-14 1984-09-14 Base-coupled transistor logic
US650660 1984-09-14

Publications (2)

Publication Number Publication Date
JPS61113270A true JPS61113270A (ja) 1986-05-31
JPH0582986B2 JPH0582986B2 (enExample) 1993-11-24

Family

ID=24609774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60201972A Granted JPS61113270A (ja) 1984-09-14 1985-09-13 モノリシックトランジスタ論理回路

Country Status (5)

Country Link
US (1) US4947230A (enExample)
EP (1) EP0178968B1 (enExample)
JP (1) JPS61113270A (enExample)
CA (1) CA1236928A (enExample)
DE (1) DE3582004D1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166094A (en) * 1984-09-14 1992-11-24 Fairchild Camera & Instrument Corp. Method of fabricating a base-coupled transistor logic
US5150187A (en) * 1991-03-05 1992-09-22 Vlsi Technology, Inc. Input protection circuit for cmos devices
US6140694A (en) * 1998-12-30 2000-10-31 Philips Electronics North America Corporation Field isolated integrated injection logic gate
DE10057163A1 (de) * 2000-11-16 2002-05-23 Gruetzediek Ursula Verfahren zur Herstellung von Halbleiterbauelementen mit Schottky-Übergängen
US20060157748A1 (en) * 2005-01-20 2006-07-20 Nui Chong Metal junction diode and process
US7745301B2 (en) 2005-08-22 2010-06-29 Terapede, Llc Methods and apparatus for high-density chip connectivity
US8957511B2 (en) 2005-08-22 2015-02-17 Madhukar B. Vora Apparatus and methods for high-density chip connectivity
US10411086B2 (en) * 2014-04-07 2019-09-10 Semiconductor Components Industries, Llc High voltage capacitor and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467384A (en) * 1977-10-25 1979-05-30 Ibm Longitudinal pnp semiconductor
JPS5910260A (ja) * 1983-06-24 1984-01-19 Hitachi Ltd 集積注入論理回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1558281A (en) * 1975-07-31 1979-12-19 Tokyo Shibaura Electric Co Semiconductor device and logic circuit constituted by the semiconductor device
GB1580977A (en) * 1976-05-31 1980-12-10 Siemens Ag Schottkytransisitor-logic arrangements
DE2624339C2 (de) * 1976-05-31 1986-09-11 Siemens AG, 1000 Berlin und 8000 München Schottky-Transistorlogik
US4214315A (en) * 1979-03-16 1980-07-22 International Business Machines Corporation Method for fabricating vertical NPN and PNP structures and the resulting product
GB2056767A (en) * 1979-08-16 1981-03-18 Texas Instruments Inc A process and structure for Schottky transistor logic circuit
US4394673A (en) * 1980-09-29 1983-07-19 International Business Machines Corporation Rare earth silicide Schottky barriers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467384A (en) * 1977-10-25 1979-05-30 Ibm Longitudinal pnp semiconductor
JPS5910260A (ja) * 1983-06-24 1984-01-19 Hitachi Ltd 集積注入論理回路

Also Published As

Publication number Publication date
US4947230A (en) 1990-08-07
CA1236928A (en) 1988-05-17
DE3582004D1 (de) 1991-04-11
EP0178968A3 (en) 1988-09-14
JPH0582986B2 (enExample) 1993-11-24
EP0178968A2 (en) 1986-04-23
EP0178968B1 (en) 1991-03-06

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees