JPS6110994B2 - - Google Patents
Info
- Publication number
- JPS6110994B2 JPS6110994B2 JP5227377A JP5227377A JPS6110994B2 JP S6110994 B2 JPS6110994 B2 JP S6110994B2 JP 5227377 A JP5227377 A JP 5227377A JP 5227377 A JP5227377 A JP 5227377A JP S6110994 B2 JPS6110994 B2 JP S6110994B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- silicon layer
- channel
- region
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 238000009792 diffusion process Methods 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5227377A JPS53137680A (en) | 1977-05-07 | 1977-05-07 | Manufacture for mos type semocunductot device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5227377A JPS53137680A (en) | 1977-05-07 | 1977-05-07 | Manufacture for mos type semocunductot device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53137680A JPS53137680A (en) | 1978-12-01 |
| JPS6110994B2 true JPS6110994B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-04-01 |
Family
ID=12910166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5227377A Granted JPS53137680A (en) | 1977-05-07 | 1977-05-07 | Manufacture for mos type semocunductot device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53137680A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62261696A (ja) * | 1986-05-08 | 1987-11-13 | Mitsubishi Electric Corp | タ−ボ分子ポンプ装置 |
-
1977
- 1977-05-07 JP JP5227377A patent/JPS53137680A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62261696A (ja) * | 1986-05-08 | 1987-11-13 | Mitsubishi Electric Corp | タ−ボ分子ポンプ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53137680A (en) | 1978-12-01 |