JPS6126223B2 - - Google Patents

Info

Publication number

JPS6126223B2

JPS6126223B2 JP9079378A JP9079378A JPS6126223B2 JP S6126223 B2 JPS6126223 B2 JP S6126223B2 JP 9079378 A JP9079378 A JP 9079378A JP 9079378 A JP9079378 A JP 9079378A JP S6126223 B2 JPS6126223 B2 JP S6126223B2

Authority

JP

Japan

Prior art keywords

region

source

film

forming

channel stopper

Prior art date

1978-07-24

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 238000009792 diffusion process Methods 0.000 claims description 36
• 239000012535 impurity Substances 0.000 claims description 29
• 239000004065 semiconductor Substances 0.000 claims description 19
• 229920002120 photoresistant polymer Polymers 0.000 claims description 16
• 238000004519 manufacturing process Methods 0.000 claims description 13
• 238000000034 method Methods 0.000 claims description 12
• 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
• 239000000758 substrate Substances 0.000 claims description 10
• 238000000926 separation method Methods 0.000 claims description 9
• 235000012239 silicon dioxide Nutrition 0.000 claims description 5
• 239000000377 silicon dioxide Substances 0.000 claims description 5
• 230000000873 masking effect Effects 0.000 claims description 2
• 229910004298 SiO 2 Inorganic materials 0.000 description 19
• 230000015556 catabolic process Effects 0.000 description 8
• 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
• 229920005591 polysilicon Polymers 0.000 description 8
• 230000005669 field effect Effects 0.000 description 6
• 238000005468 ion implantation Methods 0.000 description 6
• 238000002955 isolation Methods 0.000 description 6
• 238000007796 conventional method Methods 0.000 description 5
• 238000000206 photolithography Methods 0.000 description 5
• 229910052796 boron Inorganic materials 0.000 description 4
• 230000001590 oxidative effect Effects 0.000 description 4
• ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
• -1 boron ions Chemical class 0.000 description 2
• 230000000694 effects Effects 0.000 description 2
• 238000005530 etching Methods 0.000 description 2
• OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
• 229910052782 aluminium Inorganic materials 0.000 description 1
• 230000007423 decrease Effects 0.000 description 1
• 238000007373 indentation Methods 0.000 description 1
• 229910052698 phosphorus Inorganic materials 0.000 description 1
• 239000011574 phosphorus Substances 0.000 description 1