JPS61104077A - ホウ素皮膜の形成方法 - Google Patents
ホウ素皮膜の形成方法Info
- Publication number
- JPS61104077A JPS61104077A JP22196884A JP22196884A JPS61104077A JP S61104077 A JPS61104077 A JP S61104077A JP 22196884 A JP22196884 A JP 22196884A JP 22196884 A JP22196884 A JP 22196884A JP S61104077 A JPS61104077 A JP S61104077A
- Authority
- JP
- Japan
- Prior art keywords
- boron
- substrate
- film
- cvd
- thermally sprayed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 53
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 21
- 150000001639 boron compounds Chemical class 0.000 claims description 4
- 238000007751 thermal spraying Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000005507 spraying Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000006698 induction Effects 0.000 abstract description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007921 spray Substances 0.000 abstract 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 abstract 1
- 229910015844 BCl3 Inorganic materials 0.000 abstract 1
- 229910033181 TiB2 Inorganic materials 0.000 abstract 1
- 238000005299 abrasion Methods 0.000 abstract 1
- 238000005336 cracking Methods 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GHYOCDFICYLMRF-UTIIJYGPSA-N (2S,3R)-N-[(2S)-3-(cyclopenten-1-yl)-1-[(2R)-2-methyloxiran-2-yl]-1-oxopropan-2-yl]-3-hydroxy-3-(4-methoxyphenyl)-2-[[(2S)-2-[(2-morpholin-4-ylacetyl)amino]propanoyl]amino]propanamide Chemical compound C1(=CCCC1)C[C@@H](C(=O)[C@@]1(OC1)C)NC([C@H]([C@@H](C1=CC=C(C=C1)OC)O)NC([C@H](C)NC(CN1CCOCC1)=O)=O)=O GHYOCDFICYLMRF-UTIIJYGPSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229940125797 compound 12 Drugs 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/28—Deposition of only one other non-metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Chemical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22196884A JPS61104077A (ja) | 1984-10-24 | 1984-10-24 | ホウ素皮膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22196884A JPS61104077A (ja) | 1984-10-24 | 1984-10-24 | ホウ素皮膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61104077A true JPS61104077A (ja) | 1986-05-22 |
| JPH0480989B2 JPH0480989B2 (enrdf_load_stackoverflow) | 1992-12-21 |
Family
ID=16774985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22196884A Granted JPS61104077A (ja) | 1984-10-24 | 1984-10-24 | ホウ素皮膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61104077A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008156742A (ja) * | 2006-06-02 | 2008-07-10 | Toyota Central R&D Labs Inc | 導電性耐食材料及びその製造方法 |
| KR20180069705A (ko) | 2016-12-15 | 2018-06-25 | 도쿄엘렉트론가부시키가이샤 | 성막 방법, 붕소 막 및 성막 장치 |
-
1984
- 1984-10-24 JP JP22196884A patent/JPS61104077A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008156742A (ja) * | 2006-06-02 | 2008-07-10 | Toyota Central R&D Labs Inc | 導電性耐食材料及びその製造方法 |
| US8241530B2 (en) | 2006-06-02 | 2012-08-14 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Metal separator for fuel cell and method for producing the same |
| KR20180069705A (ko) | 2016-12-15 | 2018-06-25 | 도쿄엘렉트론가부시키가이샤 | 성막 방법, 붕소 막 및 성막 장치 |
| US10388524B2 (en) | 2016-12-15 | 2019-08-20 | Tokyo Electron Limited | Film forming method, boron film, and film forming apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0480989B2 (enrdf_load_stackoverflow) | 1992-12-21 |
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