JPS61103164A - Electrophotographic sensitive body - Google Patents

Abstract

PURPOSE:To form an electrophotographic sensitive body with which the dark attenuation of electrostatic charge potential is extremely small by coating a photoconductive layer consisting of amorphous silicon on a conductive substrate and incorporating an org. zirconium compd. into a surface layer to be laminated thereon. CONSTITUTION:The photoconductive layer of the electrophotographic sensitive body constituted by laminating successively the photoconductive layer and surface layer on the conductive substrate consists of a (p) type semiconductor consisting essentially of the amorphous silicon cong. hydrogen atoms and contg. boron atoms as an impurity and the surface layer thereof consists of the dry and hardened material of a soln. contg. at least one kind of the org. zirconium compd. Zirconium complex and zirconium alkoxide are more particularly preferable as the org. zirconium compd. The preferable example of the zirconium complex is acetyl acetone zirconium complex such as zirconium acetoacetonate. The more preferable example of the zirconium alkoxide is zirconium tetramethoxide, etc.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrophotographic photoreceptor using amorphous silicon in an optical layer.

In the conventional electrophotographic method, an electrostatic latent layer is formed on a photoreceptor by image exposure, and after this latent image is developed with a developer called gold toner, a toner image is transferred to transfer paper. This is a method of fixing and obtaining copies. The basic structure of a photoreceptor used in this electrophotographic method is a photosensitive layer laminated on a conductive substrate. However, conventionally, the photosensitive layer 2! I-Constituting materials include inorganic photosensitive materials such as selenium or selenium alloys, hycadmium sulfate, and zinc oxide, and organic photosensitive materials such as polyvinylcarbazole, trinitrofluorenone, bisazo pigments, phthalocyanine, pyrazoline, and hydrazone. It is photosensitive/i! #It is used as a complete single layer or a fljt layer. However, these conventionally used photosensitive layers have poor durability, heat resistance, and original M11
There are still problems that need to be resolved, such as in terms of

In recent years, photoreceptors using amorphous silicon as the photosensitive layer have been known, and many attempts have been made to improve them. This photoreceptor using amorphous silicon is one in which an amorphous film of silicon is formed on a conductive substrate by a glow discharge decomposition method using 7 run (SiH2) gas.
Hydrogen atoms are incorporated into the amorphous silicon film to exhibit photoconductivity. This amorphous silicon photoreceptor has a photosensitive layer that has a high surface hardness, is resistant to scratches, is resistant to abrasion, has high heat resistance, and has excellent mechanical strength. )!
! K% amorphous silicon has a wide spectral sensitivity range and has excellent photosensitivity, such as high photosensitivity. However, on the other hand, photoreceptors using amorphous silicon have a large dark yR setting.
Even if w'Wt is used, it has the disadvantage that a sufficient band 4 potential can be obtained. That is, when an amorphous silicon photoreceptor (!) is charged, imagewise exposed to form an electrostatic latent image, and then developed, charges are deposited on the surface of the photoreceptor until the image exposure process or the development process. During the process, even the charge of the nine parts is attenuated without being exposed to light, making it impossible to obtain the charging potential necessary for development.This attenuation of the charging potential is easily changed by the influence of environmental conditions, In a high-temperature, high-humidity environment, the charging potential drops significantly.Furthermore, when an amorphous silicon photoconductor is used repeatedly, the charging potential gradually decreases.Such a photoconductor with large dark decay of the charging potential If a copy is made using this method, the resulting copy will have low image density and poor halftone reproducibility.

OBJECTS OF THE INVENTION It is an object of the present invention to provide a photoreceptor for electrophotography which eliminates the above-mentioned drawbacks of photoreceptors using amorphous silicon arrow metal.

Furthermore, the object of the present invention is to use amorphous silicon, and
An object of the present invention is to provide an electrophotographic photoreceptor in which the darkening of the charged potential is extremely small.

Another object of the present invention is to provide a photoreceptor for electrophotography whose charging characteristics are not affected by the ratio trapping of the external environment.

Another object of the present invention is to provide an electrophotographic photoreceptor with excellent image quality even after repeated use.

Another object of the present invention is to provide an electrophotographic photoreceptor having excellent electrophotographic properties such as mechanical strength, durability, heat resistance, and photosensitivity.

Structure of the Invention As a result of extensive research, the present inventor coated a conductive substrate with an original quaternary conductive layer made of amorphous silicon, further laminated a surface Nt layer thereon, and a V surface layer. As, there are 4
! It has been found that the above object can be achieved by using a dried and cured product containing at least one type of zirconium arsenide.

As the photoconductive layer, a p-type semiconductor made of amorphous silicon and containing boron X atoms as an impurity is used.

Thus, according to the present invention, in an electrophotographic photoreceptor in which a photoconductive layer and a surface layer are successively laminated on a four-conducting substrate, an amorphous silicon layer containing hydrogen atoms is used as a pre-lid conductive layer. Provided is an electrophotographic photoreceptor comprising a p-type semiconductor containing boron atoms as a body and impurity, and wherein the surface layer comprises a dried and cured product of a solution containing at least an organic zirconium compound.

As the organic zirconium compound used to form the entire surface of the electrophotographic photoreceptor of the present invention, various types of organic zirconium compounds can be considered, but particularly preferred are Sorconium A B
Body* It is iohidzirconium alcohol. Preferred examples of zirconium complexes include zorconium acetoacetonate, zorconium tetrakis acetylacetonate,
9 These are acetylacetone zirconium complexes such as ruconium trypto cymonoethyl acetoacetate, bisacetylacetonate bisethylacetoacetate zirconium, monoacetylacetonate trisethylacetoacetate zorconium, bisacetylacetonate bisethylacetoacetate zirconium. In addition, zirconium complexes such as 1-zirconium tetrakisethyl lactate and zirconium dibutoxybisethyl lactate can also be used. Preferred 911 of Zyl-nium alkoxide
Examples include zirconium tetramethoxide, zirconium nato 9-n-fa poxide, zirconium tetrab-fa poxide, zirconium-〇-butoxide, zirconium isobutoxide, and the like.

When preparing the electrophotographic photoreceptor of the present invention, a solution containing seven or more of the above-mentioned organic zolconium arsenides dissolved in an appropriate medium is applied.
A solution obtained by mixing these organic zirconium compounds with an organic silicon supercompound may also be used. As this organosilicon compound, compounds generally called silica/coupling agents are preferred.For example, vinyltricumylsilane, vinyltriethoxysilane, vinyltris(β
-methoxyethophylsilane, r-glycidoxyglobiltrimethoxysilane, γ-methacryloxyglobiltrimethoxysilane, N-β(aminoethyl/S/)γ-
Aminoglobiltrimethoxysilane, N-β(aminoenal)r-aminopropylmethyldimethodisilane, γ
-chloroglobiltrimethoxysilane, r-mercagutfa pyrutrimethoxysilane, γ-aminoglobiltriethodisilane, methyltrimethoxysilane, schifmethyldimethoxylan, trimethylmonometosilane, diphenyldimethoxysilane, diphenyldimethoxysilane, Examples include monophenyltrimethoyasisilane.

When the silane coupling agent and the silane coupling agent are used as a mixture as described above, it is preferable that the amount of the silane coupling agent be 5 to 5053 based on the total solid weight.

Hidden 1, organic norconium compound! Depending on the case, the snout may become even more peculiar? The electrophotographic material of the present invention is prepared by applying the i♀1 maki containing iZi by a method such as Kofuden Hatojo iZi, Sugrei coating, A-mon coating, knife coating, or (yo-roll coating), and then drying and curing it. A photoreceptor is obtained.The drying and curing temperature can be set at any temperature between 100 and 000CO.The film thickness of the finally obtained Ogi Ilf! layer can also be set at any value, but is between 0.7 and 0.7. 10twn,
It is preferable that the load is less than /μIn.

The photoconductive layer whose living body is amorphous silicon is 5IH4, S1
□H4,51,H,,514H,. , a glow discharge method, a sputtering method, an ion grating method, p
, , is formed on one substrate by a method such as an empty evaporation method. Among them, plasma CVD (Chemical Vapo
r Deposition ) A method (glow discharge method) in which silane (5IH4) gas, etc. is decomposed by glow discharge is preferable from the viewpoint of controlling the amount of hydrogen contained in the film. In order to carry out the process more efficiently, hydrogen (H2) gas may be separately introduced into the Glazma CvD device PICO at the same time as silane gas or the like.

The material used as the conductive material of the electrophotographic photoreceptor of the present invention is a p-type semiconductor made of amorphous silicon containing hydrogen atoms and containing boron atoms as impurities. This way,
The surrogate atom 6 plus k, usually zo.

Gale y (s2+6) gas is used as the original, and a p-type semiconductor amorphous silicon is obtained by a-7JO of 0.07/atom.

Maku, 4:'l? In another photoreceptor for alpha electrons according to 3 Ming, the light guide 1- is enthroned with amorphous silicon containing ice atoms and impurities, as well as hof) atoms. It consists of a p-type atom, and it also has a carbon atom, an atom, or an atom of the following types. No electric shock film
If the resistance is 4/711, the increase in the height of summer, the refreshing,
'Band 11' is preferable from the viewpoint of increasing the standard film thickness and Teisei Denkan 2.

Furthermore, for the purpose of increasing the sensitivity of the photoreceptor in the wavelength range, it is also an OL gg to inlay elements such as lumenium (Ge) into the original photoreceptor. It is also possible to reduce the dark abrasive force to 0 by adding all the electrons.

Thus, the present invention is for four children! In order to form a full 46-dimensional layer of a 6-element substance, hydrogen gas, which is the main raw material, and hydrogen gas, if desired, are used in the Gradama CVD apparatus, and 8 layers are added together with these gases. Glow discharge decomposition may be performed by introducing a gaseous compound containing the element. As described above, the discharge conditions required to form a light layer made of amorphous silicon by the GLAZMA CvD method are, for example, in the case of AC discharge, the frequency is usually 0.7~. ? OMHz,
The degree of vacuum during discharge is 0. /~5 Torr, board iM#
The IL temperature is /θ0~Hiro00C. Therefore, the film thickness of the light guide fL layer mainly composed of amorphous silicon is 7 to 700 μm.
It is particularly preferable that m1 is 70 to 50 μm.

The conductive substrate can be made entirely of aluminum, nickel, chromium, stainless steel, or brass, a glass sheet or glass with a conductive film, or two.
It is possible to use paper treated with 4. Also,
The shape of the 211 flexible substrate is cylindrical.

It can be completely exposed in any shape such as a flat plate or an endless belt.

EXAMPLES Next, the $ light body for electrophotography of the present invention will be further explained with reference to comparative examples and examples of the present invention.

Comparative Example 1: A capacitively coupled plastic trap cylindrical substrate was placed at a predetermined position in the reaction chamber of an e-vcVD device, and the substrate temperature was kept at a predetermined temperature. Maintaining 2 soc, 100-silane (SIH4) in the reaction chamber, f/s/20 CX:, 00 ppm dilution of hydrogen dilution. 2n (82H6) Gax
In addition, 100b water bubble (H2) gas is introduced at a rate of 6 qocc per minute, and the inside of the reaction tank is θ, ! r
After maintaining the inner thickness of Torr, /J,! ;7
A high frequency power source of MHz was turned on to generate a glow discharge, and the output of the high frequency power source was maintained at about 5W. In this way, a cylindrical photoconductor/i+! consisting of a p-type semiconductor mainly composed of amorphous negative silicon (JAt-) and containing boron atoms as impurities is formed on a substrate with a thickness of Sμm. A photoreceptor having the following was obtained. The photoconductor thus obtained has a hard surface, excellent wear resistance and heat resistance, high dark resistance and high light sensitivity, and has excellent q properties for electroconductor for electron transfer. Ta. Further, it was possible to perform both positive and negative charging, and had bipolar charging properties.

This photoreceptor was positively charged to an initial potential of 550V.9. This operation of exposing the sample to light having a wavelength of 4.5i' Onm was repeated at a rate of 70 times per minute. The residual potential at this time was stable at Ov, but the charging potential tended to decrease as the number of repetitions increased, ioo.

After repeated operations, the charging potential is the initial band ja
L1! It has decreased to 75% of the value.

When this g-light body t was negatively charged and the same operation was performed, the same phenomenon as in the case of positively charging was observed.

Example 1: Comparison $117 and -1 A photoconductor having a photoconductor f4 made of a p-type semiconductor mainly composed of amorphous silicon and containing boron as an impurity was prepared by the same method and under the same conditions. Apply a liquid solution consisting of 1 part of tetra-n-butoxy 21% alcohol and 100M parts of ethyl alcohol L-120
The photoreceptor was dried and cured in an oven at 0° C. for 2 hours to obtain a photoreceptor having a surface layer with a thickness of 0.3 μm. The surface layer obtained by this process has properties similar to ceramics, and the excellent properties of amorphous silicon, such as surface hardness, wear resistance, and heat resistance, are almost never lost. There wasn't.

Positively charge this photoreceptor to achieve the highest level of initial frost! r! OV, and a repeat test was conducted in the same manner as in Comparative Examples 1 and 1. The residual potential at this time was stable at about 5V. ′
The charging point was 7000 times, and even after the operation, the initial band tiV was 5sov, which was different from the potential.

Also, when this photoreceptor was negatively charged, the remaining '11i' and '11i' positions remained stable at -3 V, and the '11i' and '9' positions remained almost unchanged from the first time even after 1,000 repetitions, as in the case of positive charging. It was stable.

Example: A light guide [M? A solution consisting of parts by weight of sidoco in zirconium tetra-n-buto, 7 parts by weight of methyltrimethoxysilane, and 1 Km parts of ethyl alcohol was applied onto the photoreceptor using a dipping method, and dried and cured at 250°C for 1 hour. A photoreceptor with a surface layer of 0.5 μm thickness was obtained.

The surface layer of the photoreceptor thus obtained has properties similar to ceramics, which is an excellent property of amorphous silicon.
There was almost no loss in surface hardness, wear resistance, or heat resistance.

Is this photoreceptor positively charged and the exposure operation'? -After nine repetitions, the residual potential remained stable at 5V. VC in case of negative charge
#: The residual potential was stable at 5V. The charging potential is positive,
Both negative charges were stable up to 7000 times.

Example 3: Zirconium tetra- n-glopoxy Vdajuibe, γ-methacryloxyglobiltrimethoxysilane/i amount! A solution consisting of #3 parts by weight of ethyl alcohol lSO and 100 parts by weight of isopropyl alcohol? Apply by dipping method, 300
A photoreceptor that is dried and cured at ℃ for 1 hour and waiting for a lμ thick surface layer? −
I prayed.

The surface hardness, abrasion resistance, and heat resistance of the photoreceptor containing this surface layer were the same as those of amorphous silicon.

This photoreceptor was positively charged, and 1000 times of light and negative light were applied to it! When repeated, the residual i potential was Vc10V for both positive and negative charges, which was stable, and the potential of band 1 was also stable.

Example 4L: A photoconductor made of a p-type semiconductor mainly composed of amorphous silicon and containing boron atoms as impurities was obtained by the same method and conditions as in Comparative Example 1. Ta. Further, a solution consisting of 1 part by weight of zirconium trifluoroacetylacetonate, 30 M of methyl alcohol, 1 part of n-butanol IOX was applied thereon, and dried and hardened in an oven at 200°C for 1 hour to give a 0.3μ A photoreceptor with a thick surface layer was obtained. The surface layer obtained in this way has properties similar to ceramics, which is an excellent property of amorphous silicon.
#1 No loss of surface hardness, wear resistance, and heat resistance.

Positively charge this photoreceptor to create an initial potential! ;! ;OVK,
When repeated trials were carried out in the same manner as in Comparative Example 1, the residual potential was stable at approximately QV. Even after repeated sweeping for the ratio Fi/θθθ times, the potential was 5 sov, which was different from the initial charging potential.

In addition, when this photoreceptor is negatively charged, the residual potential between the hole and the ζ filter is stable at -3V, and the charging potential is also the same as the first one even after 100Q times of repetition, as in the case of positive charging. It remained almost unchanged.

Implementation 9'lI! ; a Light guide* made of a p-type semiconductor mainly composed of amorphous silicon and containing boron atoms as an impurity, prepared by the same method and under the same conditions as Comparison 1/, ju t'! Zirconium trifluoroacetylacetonate 2
A solution consisting of 7 parts by weight of methyltrimethoxysilane, 7 parts by weight of n-pumenorco O ice needles, and 50 parts by weight of methyl alcohol was applied by the pickling method and dried and cured at 2Sθ°C for 2 hours to form a surface with a thickness of 0Sμm. A photoreceptor with a plate was obtained.

The surface layer of the FC photoreceptor obtained in this way has properties similar to those of ceramics, and the excellent properties of amorphous silicon, such as surface hardness, abrasion resistance, and heat resistance, are almost impossible to print. Kotonakatsu'fi-0 When the positive band 11 and the exposure operation hO were removed from this photoreceptor,
It was stable at 2V with the remaining voltage at about that point. In the case of negative charging, the residual potential was stable at -5V. The charging potential was stable up to 1oQO times for both positive and negative charging.

Example 6: The photoconductor of Comparative Example 1 and the photoconductor of Example/-5 were subjected to low humidity,
Charging and exposure were repeated for kk1h in a high temperature and high humidity environment.

In all cases, the charging potential was constant, and the highest potential of band 8+1 after 100 repetitions was set at 700, and the other charging potentials were shown as relative values.

(Table/) Charging potential of each photoreceptor] In this way, for an amorphous silicon photoreceptor without a surface layer, the charging potential decreases significantly as the number of repetitions increases and when washed in a high i and high humidity atmosphere. In contrast, when the surface #j'fr was set using the button of the present invention, the charging potential was almost constant even under the conditions of high temperature and high humidity and the number of repetitions was increased.

Comparative Example 2 = A cylindrical M substrate was placed at a predetermined position in the reaction chamber of a capacitively coupled plasma CVD apparatus, the substrate temperature was maintained at a predetermined temperature of 2Sθ°C, and a 100X film was placed in the reaction chamber. (5N
-14) Gas per minute/koθeC.

1000p1000pp run with hydrogen dilution (B, l-16
) gas at 3 Qcc per minute, and hydrogen (H3) gas per minute of 100% ethylene (C, H4) ff varnish at 737 cc per minute, and t-Q in the reaction tank, ! After maintaining the internal pressure at fTorr, alternating frequency power of /J-jAMs-+z is applied to generate glow emission 'RL, and the output of the high-frequency power supply is changed to g.
Holds 3WVc#. By applying pressure in this way, a photoreceptor having a thickness of 23 μm and consisting of a p-type semiconductor mainly composed of amorphous silicon and containing boron and carbon as impurities was obtained on a cylindrical M substrate. Ta.

When the photoconductor obtained by VC was placed in a copying machine and image IJRP@II was performed using a positive corona charging method,
It was not possible to obtain an image density sufficient for repeated use. In addition, when the image quality of this photoreceptor tube was evaluated at 30°C and g3XRH(r)*, image flow was observed.

Example 7: On a photoreceptor having a photoconductive layer made of a p-type semiconductor mainly composed of amorphous silicon and containing boron and carbon tubes, prepared using the same methods and conditions as in Comparative Examples 1 and 41, A solution consisting of 7 parts by weight of methyl alcohol, 50 parts by weight of methyl alcohol, and n-butyl alcohol was applied by dip coating, and 2! The photoreceptor was dried and cured at 0° C. for 2 hours to obtain a photoreceptor having a 0.2 μm rhinoceros surface layer.

The photoreceptor thus obtained was placed in a copying machine, and the image quality was evaluated using a positive corona charging method.As a result, an image quality of no problem for practical use was obtained at the initial stage.

Further, although the duplication operation was repeated 50,000 times, no decrease in image density was observed. This photoreceptor was heated at 30°C, g! fXRHO
I evaluated the image quality under the burial mound, but could not see the flow of the image?
th resolution was shown.

Comparative Example 3: A cylindrical substrate was installed at a predetermined position in the reaction chamber of a button-coupled glazma CVD gunwale, and the temperature of the transducer plate was 2! ; Maintain the temperature at O”C and add 100% silane (S
IH,) gas per minute/2Qcc, hydrogen dilution O/00
Q opmji? Run (B, H6) Gas at 30c/min
c1 and 100% nitrogen (N2),'l.

Total 90cc per minute, further IC10096 hydrogen (H)
Gas is introduced at a rate of Q cc per minute, and the fO in the reaction tank is
After maintaining the internal pressure at ,5Torr, /3-,t4M
Hz O father frequency power was applied; - to generate a glow discharge and maintain the output of the high frequency power supply at gswK. In this way, a photoconductor having a 25 μm thick light guide layer made of a p-type semiconductor mainly composed of amorphous silicon and containing boron and nitrogen X as impurities was obtained on a cylindrical AJA plate. .

When the photoreceptor thus obtained was placed in a copying machine and the image quality was evaluated using a positive corona charging method, it was found that ``a density of i[111 g#'' that could be achieved in practical use could not be achieved.

Further, when this photoreceptor was evaluated for image quality under an environment of 30° C. and g5% R1-1, image flow was observed.

Implementation: Comparison? 113 and 1!1j Amorphous Kei JJ made by one method and under the same conditions! ,? A light guide composed of a p-type semiconductor containing boron as the main body and gold as the main body 1i)'! A solution consisting of 1 part by weight of zirconium tetrabutoxide and 100 parts by weight of ethyl alcohol is immersed onto the photoreceptor having fj! , apply, 2! ; Drying and curing at 0° C. for 2 hours yielded a photoreceptor having a surface Jfk with a thickness of 0.2 μm.

When the photoreceptor thus obtained was placed in a copying machine and the image quality was evaluated using a positive corona charging method, an image density that was acceptable for use at the initial stage was obtained.

In addition, even after repeating the photoshoot 50,000 times, there was no decrease in the quality of the painting. This photoreceptor f30℃, t5%RH*
I evaluated the image quality under the shrine, but no flow of the 1Ilii image was observed.

Comparison: A cylindrical M substrate was installed at a predetermined position in the reaction chamber of a vessel-coupled glazma CVD device, the substrate eccentricity was maintained at the predetermined eccentricity of 250°C &C, and 10096 silane (
5IH4) gst-az min/, 2 (7CC, hydrogen dilution)/000 ppm Shiba? Run (82H,) Gas at 30cc/min and 700% oxygen gas/min.
, Qcc, '4, etc., 10096 water ff1 (H2) gas is introduced at g 9 cc per minute, and fQ in the reaction tank is
, j; /3-! after maintaining the internal pressure at Torr. ;l
An alternating frequency wave of sMHz was applied to generate a glow discharge, and the output of the high frequency power source was maintained at f-gswtch#. In this way, on the cylindrical glue substrate, the thickness Sμ
The photoreceptor +m was made of a p-type semiconductor mainly composed of amorphous silicon and containing boron and 1% impurity as an impurity.

When the photoreceptor thus obtained was placed in a copying manner and the image quality was evaluated using a positive corona charging method, a practically acceptable image density was not obtained.

Also, this photoreceptor f1″30℃s II!;9bRHI
7') When IthI yellow was evaluated under the environment, the flow of the image was
Or tied together.

“Example: Amorphous silicon fabricated using the Hitoshio rig and IDJ method,” J, r photoconductive layer consisting of a p-type semiconductor fully containing boron and oxygen as impurities. zirconium tetrabutoxide/11c% parts, methyltrimethoxysilane y1 part by weight,
Q Q i< A solution consisting of 1 part J and 100 parts Improvil alcohol? Dip coating and 250℃
After drying and curing for a period of time, a photoreceptor having a surface layer of 0.1 μm thick was obtained.

A photoreceptor obtained through this process? When the image quality was evaluated using a positive corona charging method, it was found that ti
An image @density with no practical problems was obtained.

In addition, although the copying operation was repeated 50,000 times, no decrease in image density was observed. This photoreceptor't30℃, g5%RH1
7) Image quality was evaluated 7 times under environmental conditions, but no image flow was observed, indicating high resolution.

Effects of the Invention The light repellent material for basket photography of the present invention maintains the excellent properties of a photoreceptor made of amorphous silicon, such as high mechanical strength, high durability, high heat resistance, and image tip sensitivity. However, it is possible to provide images of poor quality without having to worry about external access or the influence of the number of times of use.

Claims (4)

[Claims] (1) In an electrophotographic photoreceptor comprising a photoconductive layer and a surface layer sequentially laminated on a conductive substrate, the photoconductive layer is made of amorphous silicon containing hydrogen atoms and boron atoms as impurities. the surface layer contains at least one organic zirconium compound;
1. An electrophotographic photoreceptor comprising a dried and cured product of a solution containing various types of electrophotographic photoreceptors. (2) The electrophotographic photoreceptor according to claim (1), wherein the organic zirconium compound is a zirconium complex or a zirconium alkoxide. (3) In an electrophotographic photoreceptor comprising a photoconductive layer and a surface layer sequentially laminated on a conductive substrate, the photoconductive layer is made of amorphous silicon containing hydrogen atoms and boron atoms as impurities. The surface layer further contains at least one type of carbon atom, nitrogen atom, or oxygen atom, and the surface layer contains at least one organic zirconium compound.
1. A photoreceptor for electrophotography, characterized in that it is made of a dried and cured product of a solution containing various types of photoreceptors. (4) The electrophotographic photoreceptor according to claim (3), wherein the organic zirconium compound is a zirconium complex or a zirconium alkoxide.