JPS61100000A - 情報記憶装置 - Google Patents

情報記憶装置

Info

Publication number
JPS61100000A
JPS61100000A JP59218707A JP21870784A JPS61100000A JP S61100000 A JPS61100000 A JP S61100000A JP 59218707 A JP59218707 A JP 59218707A JP 21870784 A JP21870784 A JP 21870784A JP S61100000 A JPS61100000 A JP S61100000A
Authority
JP
Japan
Prior art keywords
node
power supply
supply terminal
terminal
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59218707A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0322679B2 (en:Method
Inventor
Yoshinori Okajima
義憲 岡島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59218707A priority Critical patent/JPS61100000A/ja
Priority to US06/788,567 priority patent/US4744060A/en
Priority to US06/788,587 priority patent/US4796233A/en
Priority to US06/788,458 priority patent/US4745582A/en
Priority to EP85307560A priority patent/EP0178948B1/en
Priority to DE8585307561T priority patent/DE3585201D1/de
Priority to EP85307562A priority patent/EP0178950B1/en
Priority to KR1019850007704A priority patent/KR900008658B1/ko
Priority to EP85307561A priority patent/EP0178949B1/en
Priority to DE8585307560T priority patent/DE3585015D1/de
Priority to KR1019850007703A priority patent/KR900008659B1/ko
Priority to DE8585307562T priority patent/DE3585016D1/de
Priority to KR1019850007732A priority patent/KR900007997B1/ko
Publication of JPS61100000A publication Critical patent/JPS61100000A/ja
Publication of JPH0322679B2 publication Critical patent/JPH0322679B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Hardware Redundancy (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP59218707A 1984-10-19 1984-10-19 情報記憶装置 Granted JPS61100000A (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP59218707A JPS61100000A (ja) 1984-10-19 1984-10-19 情報記憶装置
US06/788,567 US4744060A (en) 1984-10-19 1985-10-17 Bipolar-transistor type random access memory having redundancy configuration
US06/788,587 US4796233A (en) 1984-10-19 1985-10-17 Bipolar-transistor type semiconductor memory device having redundancy configuration
US06/788,458 US4745582A (en) 1984-10-19 1985-10-17 Bipolar-transistor type random access memory device having redundancy configuration
EP85307560A EP0178948B1 (en) 1984-10-19 1985-10-18 Bipolar-transistor random access memory having a redundancy configuration
DE8585307561T DE3585201D1 (de) 1984-10-19 1985-10-18 Bipolares transistorhalbleiterspeichergeraet mit einer redundanzkonfiguration.
EP85307562A EP0178950B1 (en) 1984-10-19 1985-10-18 Bipolar-transistor type random access memory device having a redundancy configuration
KR1019850007704A KR900008658B1 (ko) 1984-10-19 1985-10-18 용장서 구조를 갖춘 반도체 메모리 장치
EP85307561A EP0178949B1 (en) 1984-10-19 1985-10-18 Bipolar-transistor type semiconductor memory device having a redundancy configuration
DE8585307560T DE3585015D1 (de) 1984-10-19 1985-10-18 Bipolarer transistor-direktzugriffsspeicher mit redundanzkonfiguration.
KR1019850007703A KR900008659B1 (ko) 1984-10-19 1985-10-18 용장성 구조를 갖춘 바이폴러 트랜지스터형 랜덤 액세스 메모리
DE8585307562T DE3585016D1 (de) 1984-10-19 1985-10-18 Bipolares transistor-direktzugriffsspeichergeraet mit einer redundanzkonfiguration.
KR1019850007732A KR900007997B1 (ko) 1984-10-19 1985-10-19 여분회로를 갖는 바이폴라 트랜지스터형 랜돔 억세스 메모리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59218707A JPS61100000A (ja) 1984-10-19 1984-10-19 情報記憶装置

Publications (2)

Publication Number Publication Date
JPS61100000A true JPS61100000A (ja) 1986-05-19
JPH0322679B2 JPH0322679B2 (en:Method) 1991-03-27

Family

ID=16724161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59218707A Granted JPS61100000A (ja) 1984-10-19 1984-10-19 情報記憶装置

Country Status (1)

Country Link
JP (1) JPS61100000A (en:Method)

Also Published As

Publication number Publication date
JPH0322679B2 (en:Method) 1991-03-27

Similar Documents

Publication Publication Date Title
US6324106B2 (en) Semiconductor memory device capable of recovering defective bit and a system having the same semiconductor memory device
EP0293339B1 (en) Nonvolatile memory device with a high number of cycle programming endurance
JP3311059B2 (ja) 半導体メモリ回路
US4587639A (en) Static semiconductor memory device incorporating redundancy memory cells
JP3365650B2 (ja) 半導体メモリ装置
JP2610598B2 (ja) 半導体メモリへのデータの並列書込み回路装置
JP2662822B2 (ja) 半導体記憶装置
JP2680007B2 (ja) 半導体メモリ
JPS63149895A (ja) 半導体メモリ
JPH0447396B2 (en:Method)
JPS61100000A (ja) 情報記憶装置
US6898136B2 (en) Semiconductor memory device, capable of reducing power consumption
JPS62132300A (ja) マトリツクスアレイリ−ドオンリメモリ装置
JPH07254298A (ja) 半導体記憶装置
JPH03162798A (ja) 不揮発性半導体記憶装置
JP4693504B2 (ja) 不揮発性半導体記憶装置
JPH10208494A (ja) 記憶装置及び読み出し方法
JPS5846175B2 (ja) プログラム可能回路
JP2605595B2 (ja) 連想記憶装置
JPS6124092A (ja) 半導体記憶装置
JP2662821B2 (ja) 半導体記憶装置
JPH02236900A (ja) 情報記憶回路
JPH07182869A (ja) 半導体記憶装置のデータ書き込み方法及び半導体記憶装置
JPH0752595B2 (ja) 半導体メモリ
JP2001344989A (ja) Sram装置