JPS6089969A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPS6089969A
JPS6089969A JP58197523A JP19752383A JPS6089969A JP S6089969 A JPS6089969 A JP S6089969A JP 58197523 A JP58197523 A JP 58197523A JP 19752383 A JP19752383 A JP 19752383A JP S6089969 A JPS6089969 A JP S6089969A
Authority
JP
Japan
Prior art keywords
layer
film
insulating film
region
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58197523A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0252859B2 (OSRAM
Inventor
Tetsushi Sakai
徹志 酒井
Nobunori Konaka
小中　信典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58197523A priority Critical patent/JPS6089969A/ja
Publication of JPS6089969A publication Critical patent/JPS6089969A/ja
Publication of JPH0252859B2 publication Critical patent/JPH0252859B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP58197523A 1983-10-24 1983-10-24 半導体装置及びその製造方法 Granted JPS6089969A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58197523A JPS6089969A (ja) 1983-10-24 1983-10-24 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58197523A JPS6089969A (ja) 1983-10-24 1983-10-24 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS6089969A true JPS6089969A (ja) 1985-05-20
JPH0252859B2 JPH0252859B2 (OSRAM) 1990-11-14

Family

ID=16375879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58197523A Granted JPS6089969A (ja) 1983-10-24 1983-10-24 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS6089969A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01205466A (ja) * 1988-02-10 1989-08-17 Nec Corp 半導体装置およびその製造方法
EP0849791A1 (en) * 1996-12-20 1998-06-24 Texas Instruments Incorporated Improvements in or relating to electronic devices
US6329699B2 (en) 1996-10-21 2001-12-11 Nec Corporation Bipolar transistor with trenched-groove isolation regions

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01205466A (ja) * 1988-02-10 1989-08-17 Nec Corp 半導体装置およびその製造方法
US6329699B2 (en) 1996-10-21 2001-12-11 Nec Corporation Bipolar transistor with trenched-groove isolation regions
EP0849791A1 (en) * 1996-12-20 1998-06-24 Texas Instruments Incorporated Improvements in or relating to electronic devices

Also Published As

Publication number Publication date
JPH0252859B2 (OSRAM) 1990-11-14

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