JPS6086888A - 半導体レ−ザ装置の製造方法 - Google Patents

半導体レ−ザ装置の製造方法

Info

Publication number
JPS6086888A
JPS6086888A JP58195657A JP19565783A JPS6086888A JP S6086888 A JPS6086888 A JP S6086888A JP 58195657 A JP58195657 A JP 58195657A JP 19565783 A JP19565783 A JP 19565783A JP S6086888 A JPS6086888 A JP S6086888A
Authority
JP
Japan
Prior art keywords
layer
gaas
single crystal
stripe
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58195657A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0559593B2 (cs
Inventor
Akio Yoshikawa
昭男 吉川
Masaru Kazumura
数村　勝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58195657A priority Critical patent/JPS6086888A/ja
Publication of JPS6086888A publication Critical patent/JPS6086888A/ja
Publication of JPH0559593B2 publication Critical patent/JPH0559593B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Semiconductor Lasers (AREA)
JP58195657A 1983-10-19 1983-10-19 半導体レ−ザ装置の製造方法 Granted JPS6086888A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58195657A JPS6086888A (ja) 1983-10-19 1983-10-19 半導体レ−ザ装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58195657A JPS6086888A (ja) 1983-10-19 1983-10-19 半導体レ−ザ装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6086888A true JPS6086888A (ja) 1985-05-16
JPH0559593B2 JPH0559593B2 (cs) 1993-08-31

Family

ID=16344817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58195657A Granted JPS6086888A (ja) 1983-10-19 1983-10-19 半導体レ−ザ装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6086888A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03297187A (ja) * 1990-04-17 1991-12-27 Nec Corp 高出力半導体レーザ素子及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03297187A (ja) * 1990-04-17 1991-12-27 Nec Corp 高出力半導体レーザ素子及びその製造方法

Also Published As

Publication number Publication date
JPH0559593B2 (cs) 1993-08-31

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