JPS6085577A - 薄膜光電変換素子の製造方法 - Google Patents

薄膜光電変換素子の製造方法

Info

Publication number
JPS6085577A
JPS6085577A JP58193633A JP19363383A JPS6085577A JP S6085577 A JPS6085577 A JP S6085577A JP 58193633 A JP58193633 A JP 58193633A JP 19363383 A JP19363383 A JP 19363383A JP S6085577 A JPS6085577 A JP S6085577A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
electrode
film
conversion element
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58193633A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0221663B2 (enrdf_load_stackoverflow
Inventor
Mario Fuse
マリオ 布施
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP58193633A priority Critical patent/JPS6085577A/ja
Publication of JPS6085577A publication Critical patent/JPS6085577A/ja
Publication of JPH0221663B2 publication Critical patent/JPH0221663B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP58193633A 1983-10-17 1983-10-17 薄膜光電変換素子の製造方法 Granted JPS6085577A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58193633A JPS6085577A (ja) 1983-10-17 1983-10-17 薄膜光電変換素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58193633A JPS6085577A (ja) 1983-10-17 1983-10-17 薄膜光電変換素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6085577A true JPS6085577A (ja) 1985-05-15
JPH0221663B2 JPH0221663B2 (enrdf_load_stackoverflow) 1990-05-15

Family

ID=16311184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58193633A Granted JPS6085577A (ja) 1983-10-17 1983-10-17 薄膜光電変換素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6085577A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6147291A (ja) * 1984-08-14 1986-03-07 Ricoh Co Ltd 多色感熱記録方法
EP0236936A3 (de) * 1986-03-11 1989-03-29 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von elektrischen Bauelementen, vorzugsweise von aus amorphen Siliziumschichten bestehenden Solarzellen
JPH02223924A (ja) * 1989-02-27 1990-09-06 Hitachi Ltd 表示パネルの製造方法
US6132585A (en) * 1992-07-01 2000-10-17 Canon Kabushiki Kaisha Semiconductor element and method and apparatus for fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6147291A (ja) * 1984-08-14 1986-03-07 Ricoh Co Ltd 多色感熱記録方法
EP0236936A3 (de) * 1986-03-11 1989-03-29 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von elektrischen Bauelementen, vorzugsweise von aus amorphen Siliziumschichten bestehenden Solarzellen
JPH02223924A (ja) * 1989-02-27 1990-09-06 Hitachi Ltd 表示パネルの製造方法
US6132585A (en) * 1992-07-01 2000-10-17 Canon Kabushiki Kaisha Semiconductor element and method and apparatus for fabricating the same

Also Published As

Publication number Publication date
JPH0221663B2 (enrdf_load_stackoverflow) 1990-05-15

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