JPS6085572A - 光電変換装置作製方法 - Google Patents

光電変換装置作製方法

Info

Publication number
JPS6085572A
JPS6085572A JP58194875A JP19487583A JPS6085572A JP S6085572 A JPS6085572 A JP S6085572A JP 58194875 A JP58194875 A JP 58194875A JP 19487583 A JP19487583 A JP 19487583A JP S6085572 A JPS6085572 A JP S6085572A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor
photoelectric conversion
forming
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58194875A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554274B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
舜平 山崎
Kenji Ito
健二 伊藤
Satsuki Watabe
渡部　五月
Kaoru Koyanagi
小柳　かおる
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58194875A priority Critical patent/JPS6085572A/ja
Publication of JPS6085572A publication Critical patent/JPS6085572A/ja
Publication of JPH0554274B2 publication Critical patent/JPH0554274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP58194875A 1983-10-18 1983-10-18 光電変換装置作製方法 Granted JPS6085572A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58194875A JPS6085572A (ja) 1983-10-18 1983-10-18 光電変換装置作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58194875A JPS6085572A (ja) 1983-10-18 1983-10-18 光電変換装置作製方法

Publications (2)

Publication Number Publication Date
JPS6085572A true JPS6085572A (ja) 1985-05-15
JPH0554274B2 JPH0554274B2 (enrdf_load_stackoverflow) 1993-08-12

Family

ID=16331760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58194875A Granted JPS6085572A (ja) 1983-10-18 1983-10-18 光電変換装置作製方法

Country Status (1)

Country Link
JP (1) JPS6085572A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246398A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 半導体装置の製造方法
JP2007235180A (ja) * 2007-06-15 2007-09-13 Kaneka Corp 太陽電池モジュール

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246398A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 半導体装置の製造方法
JP2007235180A (ja) * 2007-06-15 2007-09-13 Kaneka Corp 太陽電池モジュール

Also Published As

Publication number Publication date
JPH0554274B2 (enrdf_load_stackoverflow) 1993-08-12

Similar Documents

Publication Publication Date Title
EP0482511A1 (en) Integrated photovoltaic device
JPS6085572A (ja) 光電変換装置作製方法
JPH0419713B2 (enrdf_load_stackoverflow)
JPS6059784A (ja) 光電変換半導体装置の作製方法
JPS5996778A (ja) 光電変換装置作製方法
JPH0566754B2 (enrdf_load_stackoverflow)
JPS6095980A (ja) 光電変換装置
JPS6085571A (ja) 光電変換装置
JPS5996783A (ja) 光電変換装置
JPS6085574A (ja) 半導体装置作製方法
JPH0415631B2 (enrdf_load_stackoverflow)
JPS60123072A (ja) 半導体装置作製方法
JPH03132080A (ja) 光起電力装置
JPH06112514A (ja) 光電変換半導体装置作製方法
JPH0550152B2 (enrdf_load_stackoverflow)
JPS59225577A (ja) 半導体装置作製方法
JPS59155974A (ja) 光電変換装置作製方法
JPS6085573A (ja) 光電変換装置
JPS6081875A (ja) 光電変換装置作製方法
JPH0614556B2 (ja) 光電変換装置及びその作製方法
JPS60211817A (ja) 光電変換装置
JPS62295467A (ja) 光電変換装置
JP2002043599A (ja) 光起電力装置
JPS60100480A (ja) 光電変換装置の作製方法
JP2775480B2 (ja) 光起電力装置の形成方法