JPS6080195A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS6080195A
JPS6080195A JP58186930A JP18693083A JPS6080195A JP S6080195 A JPS6080195 A JP S6080195A JP 58186930 A JP58186930 A JP 58186930A JP 18693083 A JP18693083 A JP 18693083A JP S6080195 A JPS6080195 A JP S6080195A
Authority
JP
Japan
Prior art keywords
voltage
word line
circuit
transistor
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58186930A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0318273B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Yoshinori Okajima
義憲 岡島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58186930A priority Critical patent/JPS6080195A/ja
Priority to KR1019840006139A priority patent/KR900001596B1/ko
Priority to EP84401997A priority patent/EP0140768A3/en
Publication of JPS6080195A publication Critical patent/JPS6080195A/ja
Publication of JPH0318273B2 publication Critical patent/JPH0318273B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
JP58186930A 1983-10-07 1983-10-07 半導体記憶装置 Granted JPS6080195A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58186930A JPS6080195A (ja) 1983-10-07 1983-10-07 半導体記憶装置
KR1019840006139A KR900001596B1 (ko) 1983-10-07 1984-10-04 반도체 기억장치
EP84401997A EP0140768A3 (en) 1983-10-07 1984-10-05 A semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58186930A JPS6080195A (ja) 1983-10-07 1983-10-07 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6080195A true JPS6080195A (ja) 1985-05-08
JPH0318273B2 JPH0318273B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-03-12

Family

ID=16197199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58186930A Granted JPS6080195A (ja) 1983-10-07 1983-10-07 半導体記憶装置

Country Status (3)

Country Link
EP (1) EP0140768A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6080195A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR900001596B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60224406T2 (de) * 2001-08-08 2008-12-24 Nxp B.V. Direktzugriffspeicheranordnungen mit einem diodenpuffer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5450243A (en) * 1977-09-08 1979-04-20 Siemens Ag Bipolar memory writing and reading controller
JPS54106137A (en) * 1978-02-08 1979-08-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device
JPS5938994A (ja) * 1982-08-27 1984-03-03 Hitachi Ltd 半導体メモリ駆動回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2443118A1 (fr) * 1978-11-30 1980-06-27 Ibm France Dispositif pour l'alimentation des memoires monolithiques
JPS5833634B2 (ja) * 1979-02-28 1983-07-21 富士通株式会社 メモリセルアレイの駆動方式
US4301383A (en) * 1979-10-05 1981-11-17 Harris Corporation Complementary IGFET buffer with improved bipolar output
DE3070584D1 (en) * 1980-09-26 1985-06-05 Ibm Decoding and selection circuit for monolithic memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5450243A (en) * 1977-09-08 1979-04-20 Siemens Ag Bipolar memory writing and reading controller
JPS54106137A (en) * 1978-02-08 1979-08-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device
JPS5938994A (ja) * 1982-08-27 1984-03-03 Hitachi Ltd 半導体メモリ駆動回路

Also Published As

Publication number Publication date
EP0140768A2 (en) 1985-05-08
EP0140768A3 (en) 1987-12-16
JPH0318273B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-03-12
KR850003463A (ko) 1985-06-17
KR900001596B1 (ko) 1990-03-15

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