JPS6079725A - 被処理物の離脱装置 - Google Patents

被処理物の離脱装置

Info

Publication number
JPS6079725A
JPS6079725A JP18743683A JP18743683A JPS6079725A JP S6079725 A JPS6079725 A JP S6079725A JP 18743683 A JP18743683 A JP 18743683A JP 18743683 A JP18743683 A JP 18743683A JP S6079725 A JPS6079725 A JP S6079725A
Authority
JP
Japan
Prior art keywords
processed
discharge hole
electrode
dielectric film
electrostatic chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18743683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0263305B2 (enrdf_load_stackoverflow
Inventor
Tsunemasa Tokura
戸倉 常正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuda Seisakusho Co Ltd
Original Assignee
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuda Seisakusho Co Ltd filed Critical Tokuda Seisakusho Co Ltd
Priority to JP18743683A priority Critical patent/JPS6079725A/ja
Publication of JPS6079725A publication Critical patent/JPS6079725A/ja
Publication of JPH0263305B2 publication Critical patent/JPH0263305B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3435Target holders (includes backing plates and endblocks)

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP18743683A 1983-10-06 1983-10-06 被処理物の離脱装置 Granted JPS6079725A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18743683A JPS6079725A (ja) 1983-10-06 1983-10-06 被処理物の離脱装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18743683A JPS6079725A (ja) 1983-10-06 1983-10-06 被処理物の離脱装置

Publications (2)

Publication Number Publication Date
JPS6079725A true JPS6079725A (ja) 1985-05-07
JPH0263305B2 JPH0263305B2 (enrdf_load_stackoverflow) 1990-12-27

Family

ID=16206023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18743683A Granted JPS6079725A (ja) 1983-10-06 1983-10-06 被処理物の離脱装置

Country Status (1)

Country Link
JP (1) JPS6079725A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6230325A (ja) * 1985-07-31 1987-02-09 Tokuda Seisakusho Ltd 半導体処理装置
JPH07297474A (ja) * 1994-04-28 1995-11-10 Matsushita Electric Ind Co Ltd 気体レーザ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6230325A (ja) * 1985-07-31 1987-02-09 Tokuda Seisakusho Ltd 半導体処理装置
JPH07297474A (ja) * 1994-04-28 1995-11-10 Matsushita Electric Ind Co Ltd 気体レーザ装置

Also Published As

Publication number Publication date
JPH0263305B2 (enrdf_load_stackoverflow) 1990-12-27

Similar Documents

Publication Publication Date Title
US4431473A (en) RIE Apparatus utilizing a shielded magnetron to enhance etching
JPH03211753A (ja) 半導体製造装置
JPH06158361A (ja) プラズマ処理装置
JPH06188305A (ja) 被吸着体の離脱装置および被吸着体の離脱方法およびプラズマ処理装置
EP0790642A2 (en) Method and apparatus for removing contaminant particles from surfaces in semiconductor processing equipment
JPS6240728A (ja) ドライエツチング装置
JPS6079725A (ja) 被処理物の離脱装置
JPH0269956A (ja) 静電チャック方法及び静電チャック装置
JPH04132219A (ja) プラズマ処理装置とそれを用いる半導体装置の製造方法
JPH0513556A (ja) 静電チヤツク
JPH0220368B2 (enrdf_load_stackoverflow)
JPS6325706B2 (enrdf_load_stackoverflow)
JPS60150632A (ja) 被処理物の離脱装置
JP2007258636A (ja) ドライエッチング方法およびその装置
JPH0786383A (ja) 静電吸着装置及び方法
JPH0878512A (ja) 静電吸着装置及び方法
JPS62120932A (ja) 静電チヤツク装置
JPS61163639A (ja) プラズマ処理方法及び装置
JP3178332B2 (ja) プラズマ処理装置の運転方法
JPS6336138B2 (enrdf_load_stackoverflow)
JPS6218727A (ja) 半導体処理装置
JPH049473A (ja) 基板処理装置
JP2885578B2 (ja) スパッタリング装置
JPS5913327A (ja) ドライエツチング装置
JPH0528773Y2 (enrdf_load_stackoverflow)