JPS6069897A - 不揮発性半導体メモリ装置 - Google Patents
不揮発性半導体メモリ装置Info
- Publication number
- JPS6069897A JPS6069897A JP58164112A JP16411283A JPS6069897A JP S6069897 A JPS6069897 A JP S6069897A JP 58164112 A JP58164112 A JP 58164112A JP 16411283 A JP16411283 A JP 16411283A JP S6069897 A JPS6069897 A JP S6069897A
- Authority
- JP
- Japan
- Prior art keywords
- output
- voltage
- address decoder
- circuit
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 230000000295 complement effect Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
Landscapes
- Read Only Memory (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58164112A JPS6069897A (ja) | 1983-09-08 | 1983-09-08 | 不揮発性半導体メモリ装置 |
DE8484109957T DE3481668D1 (de) | 1983-08-30 | 1984-08-21 | Integrierte halbleiterschaltung. |
EP19840109957 EP0137245B1 (en) | 1983-08-30 | 1984-08-21 | Semiconductor integrated circuit |
US06/645,392 US4697101A (en) | 1983-08-30 | 1984-08-29 | Read/write control circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58164112A JPS6069897A (ja) | 1983-09-08 | 1983-09-08 | 不揮発性半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6069897A true JPS6069897A (ja) | 1985-04-20 |
JPS6322393B2 JPS6322393B2 (enrdf_load_stackoverflow) | 1988-05-11 |
Family
ID=15786978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58164112A Granted JPS6069897A (ja) | 1983-08-30 | 1983-09-08 | 不揮発性半導体メモリ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6069897A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6340897U (enrdf_load_stackoverflow) * | 1986-09-03 | 1988-03-17 | ||
JPS6412858A (en) * | 1987-07-02 | 1989-01-17 | Sharp Kk | Stabilizing method for boosting voltage |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57200997A (en) * | 1981-06-03 | 1982-12-09 | Toshiba Corp | Non-volatile semiconductor memory |
-
1983
- 1983-09-08 JP JP58164112A patent/JPS6069897A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57200997A (en) * | 1981-06-03 | 1982-12-09 | Toshiba Corp | Non-volatile semiconductor memory |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6340897U (enrdf_load_stackoverflow) * | 1986-09-03 | 1988-03-17 | ||
JPS6412858A (en) * | 1987-07-02 | 1989-01-17 | Sharp Kk | Stabilizing method for boosting voltage |
Also Published As
Publication number | Publication date |
---|---|
JPS6322393B2 (enrdf_load_stackoverflow) | 1988-05-11 |
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