JPS6066865A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPS6066865A
JPS6066865A JP58176716A JP17671683A JPS6066865A JP S6066865 A JPS6066865 A JP S6066865A JP 58176716 A JP58176716 A JP 58176716A JP 17671683 A JP17671683 A JP 17671683A JP S6066865 A JPS6066865 A JP S6066865A
Authority
JP
Japan
Prior art keywords
thin film
manufacturing
transparent substrate
film transistor
gate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58176716A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0452628B2 (enExample
Inventor
Akira Muraki
村木　明良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP58176716A priority Critical patent/JPS6066865A/ja
Publication of JPS6066865A publication Critical patent/JPS6066865A/ja
Publication of JPH0452628B2 publication Critical patent/JPH0452628B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
JP58176716A 1983-09-24 1983-09-24 薄膜トランジスタの製造方法 Granted JPS6066865A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58176716A JPS6066865A (ja) 1983-09-24 1983-09-24 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58176716A JPS6066865A (ja) 1983-09-24 1983-09-24 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6066865A true JPS6066865A (ja) 1985-04-17
JPH0452628B2 JPH0452628B2 (enExample) 1992-08-24

Family

ID=16018511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58176716A Granted JPS6066865A (ja) 1983-09-24 1983-09-24 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6066865A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60224277A (ja) * 1984-04-20 1985-11-08 Sanyo Electric Co Ltd 薄膜トランジスタ
US6242758B1 (en) 1994-12-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US7399668B2 (en) 2004-09-30 2008-07-15 3M Innovative Properties Company Method for making electronic devices having a dielectric layer surface treatment
US8012782B2 (en) 1995-03-18 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60224277A (ja) * 1984-04-20 1985-11-08 Sanyo Electric Co Ltd 薄膜トランジスタ
US6242758B1 (en) 1994-12-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US6429053B1 (en) 1994-12-27 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device method of fabricating same, and, electrooptical device
CN1333296C (zh) * 1994-12-27 2007-08-22 株式会社半导体能源研究所 半导体器件
CN1333297C (zh) * 1994-12-27 2007-08-22 株式会社半导体能源研究所 半导体器件
US8012782B2 (en) 1995-03-18 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US7399668B2 (en) 2004-09-30 2008-07-15 3M Innovative Properties Company Method for making electronic devices having a dielectric layer surface treatment

Also Published As

Publication number Publication date
JPH0452628B2 (enExample) 1992-08-24

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