JPS6066862A - 縦型ｍｏｓｆｅｔの製造方法 - Google Patents

縦型ｍｏｓｆｅｔの製造方法

Info

Publication number
JPS6066862A
JPS6066862A JP58175463A JP17546383A JPS6066862A JP S6066862 A JPS6066862 A JP S6066862A JP 58175463 A JP58175463 A JP 58175463A JP 17546383 A JP17546383 A JP 17546383A JP S6066862 A JPS6066862 A JP S6066862A
Authority
JP
Japan
Prior art keywords
region
film
type
aperture
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58175463A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0444432B2 (OSRAM
Inventor
Daisuke Ueda
大助 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP58175463A priority Critical patent/JPS6066862A/ja
Publication of JPS6066862A publication Critical patent/JPS6066862A/ja
Publication of JPH0444432B2 publication Critical patent/JPH0444432B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
JP58175463A 1983-09-22 1983-09-22 縦型ｍｏｓｆｅｔの製造方法 Granted JPS6066862A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58175463A JPS6066862A (ja) 1983-09-22 1983-09-22 縦型ｍｏｓｆｅｔの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58175463A JPS6066862A (ja) 1983-09-22 1983-09-22 縦型ｍｏｓｆｅｔの製造方法

Publications (2)

Publication Number Publication Date
JPS6066862A true JPS6066862A (ja) 1985-04-17
JPH0444432B2 JPH0444432B2 (OSRAM) 1992-07-21

Family

ID=15996500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58175463A Granted JPS6066862A (ja) 1983-09-22 1983-09-22 縦型ｍｏｓｆｅｔの製造方法

Country Status (1)

Country Link
JP (1) JPS6066862A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62279677A (ja) * 1986-03-21 1987-12-04 アドバンスド、パワ−、テクノロジ−、インコ−ポレ−テツド 半導体装置の製造方法
JPH02150037A (ja) * 1988-12-01 1990-06-08 Fuji Electric Co Ltd 半導体装置の製造方法
JPH0334376A (ja) * 1989-06-29 1991-02-14 Nec Corp 縦型電界効果トランジスタの製造方法
CN112701151A (zh) * 2019-10-23 2021-04-23 株洲中车时代电气股份有限公司 SiC MOSFET器件的制造方法及SiC MOSFET器件

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62279677A (ja) * 1986-03-21 1987-12-04 アドバンスド、パワ−、テクノロジ−、インコ−ポレ−テツド 半導体装置の製造方法
JPH02150037A (ja) * 1988-12-01 1990-06-08 Fuji Electric Co Ltd 半導体装置の製造方法
JPH0334376A (ja) * 1989-06-29 1991-02-14 Nec Corp 縦型電界効果トランジスタの製造方法
CN112701151A (zh) * 2019-10-23 2021-04-23 株洲中车时代电气股份有限公司 SiC MOSFET器件的制造方法及SiC MOSFET器件
CN112701151B (zh) * 2019-10-23 2022-05-06 株洲中车时代电气股份有限公司 SiC MOSFET器件的制造方法及SiC MOSFET器件

Also Published As

Publication number Publication date
JPH0444432B2 (OSRAM) 1992-07-21

Similar Documents

Publication Publication Date Title
JPH06350090A (ja) 半導体装置の製造方法
US5940710A (en) Method for fabricating metal oxide semiconductor field effect transistor
JPH01225164A (ja) 絶縁ゲートｍｏｓｆｅｔの製造方法
JPH0457337A (ja) 半導体装置およびその製造方法
JPS6066862A (ja) 縦型ｍｏｓｆｅｔの製造方法
JPH02180074A (ja) オフセット型電界効果トランジスタ及び絶縁ゲート型バイポーラトランジスタ
JPS6346760A (ja) 半導体記憶装置の製造方法
JPS63181378A (ja) 半導体装置の製造方法
JPS6225457A (ja) 縦形半導体装置の製造方法
JPH08204022A (ja) 半導体装置の製造方法
JPH02266533A (ja) 半導体装置の製造方法
US5177029A (en) Method for manufacturing static induction type semiconductor device enhancement mode power
JPH0194666A (ja) Ｍｏｓｆｅｔの製造方法
JPH0517713B2 (OSRAM)
JPH0682687B2 (ja) 接合型電界効果トランジスタの製造方法
JPS6072274A (ja) 半導体装置の製造方法
JP3127078B2 (ja) 電界効果型トランジスタ及びその製造方法
JPH08111511A (ja) 半導体装置の製造方法
JPS5856435A (ja) 半導体装置の製造方法
JPH0240965A (ja) 半導体装置の製造方法
JPH1065154A (ja) 半導体装置及びその製造方法
JPS61166154A (ja) Ｍｉｓ型半導体装置の製造方法
JPH01108775A (ja) 縦型電界効果トランジスタ
JPS60207367A (ja) 相補型半導体装置の製造方法
JPS61204973A (ja) Ｍｉｓトランジスタ−の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees