JPH0444432B2 - - Google Patents

Info

Publication number
JPH0444432B2
JPH0444432B2 JP58175463A JP17546383A JPH0444432B2 JP H0444432 B2 JPH0444432 B2 JP H0444432B2 JP 58175463 A JP58175463 A JP 58175463A JP 17546383 A JP17546383 A JP 17546383A JP H0444432 B2 JPH0444432 B2 JP H0444432B2
Authority
JP
Japan
Prior art keywords
region
opening
forming
film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58175463A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6066862A (ja
Inventor
Daisuke Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP58175463A priority Critical patent/JPS6066862A/ja
Publication of JPS6066862A publication Critical patent/JPS6066862A/ja
Publication of JPH0444432B2 publication Critical patent/JPH0444432B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
JP58175463A 1983-09-22 1983-09-22 縦型ｍｏｓｆｅｔの製造方法 Granted JPS6066862A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58175463A JPS6066862A (ja) 1983-09-22 1983-09-22 縦型ｍｏｓｆｅｔの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58175463A JPS6066862A (ja) 1983-09-22 1983-09-22 縦型ｍｏｓｆｅｔの製造方法

Publications (2)

Publication Number Publication Date
JPS6066862A JPS6066862A (ja) 1985-04-17
JPH0444432B2 true JPH0444432B2 (OSRAM) 1992-07-21

Family

ID=15996500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58175463A Granted JPS6066862A (ja) 1983-09-22 1983-09-22 縦型ｍｏｓｆｅｔの製造方法

Country Status (1)

Country Link
JP (1) JPS6066862A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4748103A (en) * 1986-03-21 1988-05-31 Advanced Power Technology Mask-surrogate semiconductor process employing dopant protective region
JPH0783122B2 (ja) * 1988-12-01 1995-09-06 富士電機株式会社 半導体装置の製造方法
JPH0334376A (ja) * 1989-06-29 1991-02-14 Nec Corp 縦型電界効果トランジスタの製造方法
CN112701151B (zh) * 2019-10-23 2022-05-06 株洲中车时代电气股份有限公司 SiC MOSFET器件的制造方法及SiC MOSFET器件

Also Published As

Publication number Publication date
JPS6066862A (ja) 1985-04-17

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