JPS6058653A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6058653A
JPS6058653A JP58165890A JP16589083A JPS6058653A JP S6058653 A JPS6058653 A JP S6058653A JP 58165890 A JP58165890 A JP 58165890A JP 16589083 A JP16589083 A JP 16589083A JP S6058653 A JPS6058653 A JP S6058653A
Authority
JP
Japan
Prior art keywords
dielectric constant
film
constant material
high dielectric
material film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58165890A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0522392B2 (enrdf_load_stackoverflow
Inventor
Takashi Kato
隆 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58165890A priority Critical patent/JPS6058653A/ja
Publication of JPS6058653A publication Critical patent/JPS6058653A/ja
Publication of JPH0522392B2 publication Critical patent/JPH0522392B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP58165890A 1983-09-10 1983-09-10 半導体装置の製造方法 Granted JPS6058653A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58165890A JPS6058653A (ja) 1983-09-10 1983-09-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58165890A JPS6058653A (ja) 1983-09-10 1983-09-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6058653A true JPS6058653A (ja) 1985-04-04
JPH0522392B2 JPH0522392B2 (enrdf_load_stackoverflow) 1993-03-29

Family

ID=15820914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58165890A Granted JPS6058653A (ja) 1983-09-10 1983-09-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6058653A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128167A (ja) * 1985-11-29 1987-06-10 Hitachi Ltd キャパシタの製造方法
JPS62234360A (ja) * 1985-11-29 1987-10-14 Hitachi Ltd 半導体装置およびその製造方法
JPH01128530A (ja) * 1987-11-13 1989-05-22 Fujitsu Ltd 半導体装置の製造方法
US5290358A (en) * 1992-09-30 1994-03-01 International Business Machines Corporation Apparatus for directional low pressure chemical vapor deposition (DLPCVD)
JPH08279601A (ja) * 1996-02-14 1996-10-22 Hitachi Ltd 半導体装置の製造方法
KR100799048B1 (ko) * 2000-06-28 2008-01-28 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조 방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128167A (ja) * 1985-11-29 1987-06-10 Hitachi Ltd キャパシタの製造方法
JPS62234360A (ja) * 1985-11-29 1987-10-14 Hitachi Ltd 半導体装置およびその製造方法
JPH01128530A (ja) * 1987-11-13 1989-05-22 Fujitsu Ltd 半導体装置の製造方法
US5290358A (en) * 1992-09-30 1994-03-01 International Business Machines Corporation Apparatus for directional low pressure chemical vapor deposition (DLPCVD)
JPH08279601A (ja) * 1996-02-14 1996-10-22 Hitachi Ltd 半導体装置の製造方法
KR100799048B1 (ko) * 2000-06-28 2008-01-28 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조 방법

Also Published As

Publication number Publication date
JPH0522392B2 (enrdf_load_stackoverflow) 1993-03-29

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