JPS6058619A - 液相エピタキシヤル成長法 - Google Patents

液相エピタキシヤル成長法

Info

Publication number
JPS6058619A
JPS6058619A JP16653983A JP16653983A JPS6058619A JP S6058619 A JPS6058619 A JP S6058619A JP 16653983 A JP16653983 A JP 16653983A JP 16653983 A JP16653983 A JP 16653983A JP S6058619 A JPS6058619 A JP S6058619A
Authority
JP
Japan
Prior art keywords
pattern
growth
layer
growth layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16653983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0219620B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Shiba
哲夫 芝
Kenji Ikeda
健志 池田
Kazuhisa Takahashi
和久 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP16653983A priority Critical patent/JPS6058619A/ja
Publication of JPS6058619A publication Critical patent/JPS6058619A/ja
Publication of JPH0219620B2 publication Critical patent/JPH0219620B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP16653983A 1983-09-12 1983-09-12 液相エピタキシヤル成長法 Granted JPS6058619A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16653983A JPS6058619A (ja) 1983-09-12 1983-09-12 液相エピタキシヤル成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16653983A JPS6058619A (ja) 1983-09-12 1983-09-12 液相エピタキシヤル成長法

Publications (2)

Publication Number Publication Date
JPS6058619A true JPS6058619A (ja) 1985-04-04
JPH0219620B2 JPH0219620B2 (enrdf_load_stackoverflow) 1990-05-02

Family

ID=15833154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16653983A Granted JPS6058619A (ja) 1983-09-12 1983-09-12 液相エピタキシヤル成長法

Country Status (1)

Country Link
JP (1) JPS6058619A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0219620B2 (enrdf_load_stackoverflow) 1990-05-02

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