JPH0219620B2 - - Google Patents

Info

Publication number
JPH0219620B2
JPH0219620B2 JP16653983A JP16653983A JPH0219620B2 JP H0219620 B2 JPH0219620 B2 JP H0219620B2 JP 16653983 A JP16653983 A JP 16653983A JP 16653983 A JP16653983 A JP 16653983A JP H0219620 B2 JPH0219620 B2 JP H0219620B2
Authority
JP
Japan
Prior art keywords
growth
pattern
growth layer
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16653983A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6058619A (ja
Inventor
Tetsuo Shiba
Kenji Ikeda
Kazuhisa Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP16653983A priority Critical patent/JPS6058619A/ja
Publication of JPS6058619A publication Critical patent/JPS6058619A/ja
Publication of JPH0219620B2 publication Critical patent/JPH0219620B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02625Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP16653983A 1983-09-12 1983-09-12 液相エピタキシヤル成長法 Granted JPS6058619A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16653983A JPS6058619A (ja) 1983-09-12 1983-09-12 液相エピタキシヤル成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16653983A JPS6058619A (ja) 1983-09-12 1983-09-12 液相エピタキシヤル成長法

Publications (2)

Publication Number Publication Date
JPS6058619A JPS6058619A (ja) 1985-04-04
JPH0219620B2 true JPH0219620B2 (enrdf_load_stackoverflow) 1990-05-02

Family

ID=15833154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16653983A Granted JPS6058619A (ja) 1983-09-12 1983-09-12 液相エピタキシヤル成長法

Country Status (1)

Country Link
JP (1) JPS6058619A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6058619A (ja) 1985-04-04

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