JPS6055630A - レジストパタ−ンの形成方法 - Google Patents

レジストパタ−ンの形成方法

Info

Publication number
JPS6055630A
JPS6055630A JP58163871A JP16387183A JPS6055630A JP S6055630 A JPS6055630 A JP S6055630A JP 58163871 A JP58163871 A JP 58163871A JP 16387183 A JP16387183 A JP 16387183A JP S6055630 A JPS6055630 A JP S6055630A
Authority
JP
Japan
Prior art keywords
resist
pattern
developer
resist pattern
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58163871A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0335654B2 (enExample
Inventor
Yoshio Yamashita
山下　吉雄
Takaharu Kawazu
河津　隆治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP58163871A priority Critical patent/JPS6055630A/ja
Priority to US06/594,481 priority patent/US4609615A/en
Priority to DE8484302145T priority patent/DE3466741D1/de
Priority to EP84302145A priority patent/EP0124265B1/en
Priority to CA000450963A priority patent/CA1214679A/en
Publication of JPS6055630A publication Critical patent/JPS6055630A/ja
Publication of JPH0335654B2 publication Critical patent/JPH0335654B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58163871A 1983-03-31 1983-09-06 レジストパタ−ンの形成方法 Granted JPS6055630A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58163871A JPS6055630A (ja) 1983-09-06 1983-09-06 レジストパタ−ンの形成方法
US06/594,481 US4609615A (en) 1983-03-31 1984-03-27 Process for forming pattern with negative resist using quinone diazide compound
DE8484302145T DE3466741D1 (en) 1983-03-31 1984-03-29 Process for forming pattern with negative resist
EP84302145A EP0124265B1 (en) 1983-03-31 1984-03-29 Process for forming pattern with negative resist
CA000450963A CA1214679A (en) 1983-03-31 1984-03-30 Process for forming pattern with negative resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58163871A JPS6055630A (ja) 1983-09-06 1983-09-06 レジストパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS6055630A true JPS6055630A (ja) 1985-03-30
JPH0335654B2 JPH0335654B2 (enExample) 1991-05-29

Family

ID=15782354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58163871A Granted JPS6055630A (ja) 1983-03-31 1983-09-06 レジストパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS6055630A (enExample)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991177A (enExample) * 1972-12-29 1974-08-30
JPS5466776A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Fine pattern forming method
JPS5543537A (en) * 1978-09-21 1980-03-27 Fujitsu Ltd Development process for o-naphthoquinonediazide type photoresist
JPS5559459A (en) * 1978-10-30 1980-05-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Resist developing solution and developing method
JPS57108851A (en) * 1980-12-25 1982-07-07 Nec Corp Formation of resist image
JPS57164736A (en) * 1981-04-03 1982-10-09 Canon Inc Formation of pattern

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991177A (enExample) * 1972-12-29 1974-08-30
JPS5466776A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Fine pattern forming method
JPS5543537A (en) * 1978-09-21 1980-03-27 Fujitsu Ltd Development process for o-naphthoquinonediazide type photoresist
JPS5559459A (en) * 1978-10-30 1980-05-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Resist developing solution and developing method
JPS57108851A (en) * 1980-12-25 1982-07-07 Nec Corp Formation of resist image
JPS57164736A (en) * 1981-04-03 1982-10-09 Canon Inc Formation of pattern

Also Published As

Publication number Publication date
JPH0335654B2 (enExample) 1991-05-29

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